Reduction in the Density of Interface States at the SiO2/4H-SiC Interface after Dry Oxidation in the Presence of Potassium

2011 ◽  
Vol 679-680 ◽  
pp. 334-337 ◽  
Author(s):  
Pétur Gordon Hermannsson ◽  
Einar Ö. Sveinbjörnsson
Keyword(s):  
Energy Distribution ◽  
Oxidation Rate ◽  
Alkali Metals ◽  
Interface States ◽  
Significant Enhancement ◽  
Interface Traps ◽  
Strong Reduction ◽  
Dry Oxidation ◽  
Density Of Interface States

We report a strong reduction in the density of near-interface traps (NITs) at the SiO2/4H-SiC interface after dry oxidation in the presence of potassium. This is accompanied by a significant enhancement of the oxidation rate. The results are in line with recent investigations of the effect of sodium on oxidation of 4H-SiC. It is evident that both alkali metals enhance the oxidation rate of SiC and strongly influence the energy distribution of interface states.

Traps at the SiC/SiO2-Interface

2000 ◽  
Vol 640 ◽  
Author(s):  
Gerhard Pensl ◽  
Michael Bassler ◽  
Florin Ciobanu ◽  
Valeri Afanas'ev ◽  
Hiroshi Yano ◽  
...  
Keyword(s):  
Conduction Band ◽  
Interface States ◽  
Strong Increase ◽  
Interface Traps ◽  
Temperature Range ◽  
Density Of Interface States

ABSTRACTThe density of interface states Dit at SiC/SiO2 interfaces of different SiC polytypes (4H-, 6H- and 15R-SiC) is monitored and the origin of these states is discussed. The hydrogenation behavior of interface states in the temperature range from 250°C to 1000°C is studied by C-V and G-V investigations. The strong increase of Dit close to the 4H-SiC conduction band is attributed to defects located in the oxide (so-called “Near Interface Traps”).

scholarly journals Charge transport mechanism in copper phthalocyanine thin films with and without traps

RSC Advances ◽  
2017 ◽  
Vol 7 (86) ◽  
pp. 54911-54919 ◽  
Author(s):  
Varsha Rani ◽  
Akanksha Sharma ◽  
Pramod Kumar ◽  
Budhi Singh ◽  
Subhasis Ghosh
Keyword(s):  
Thin Films ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Transport Mechanism ◽  
Copper Phthalocyanine ◽  
Organic Thin Films ◽  
Interface States ◽  
Charge Transport Mechanism ◽  
Density Of Interface States

We investigate the charge transport mechanism in copper phthalocyanine thin films with and without traps. We find that the density of interface states at the grain boundaries can decide the mechanism of charge transport in organic thin films.

Passivation and Depassivation of Interface Traps at the SiO2/4H-SiC Interface by Potassium Ions

2012 ◽  
Vol 717-720 ◽  
pp. 761-764 ◽  
Author(s):  
Pétur Gordon Hermannsson ◽  
Einar Ö. Sveinbjörnsson
Keyword(s):  
Thermal Stability ◽  
Conduction Band ◽  
Energy Levels ◽  
Sample Surface ◽  
Conduction Band Edge ◽  
Potassium Ions ◽  
Interface Traps ◽  
Bias Stress ◽  
Dry Oxidation ◽  
Thermal Stability Of

We investigate the passivation of interface traps by method of oxidizing Si-face 4H-SiC in the presence of potassium as well as examining the thermal stability of this passivation process. It is observed that this type of dry oxidation leads to a strong passivation of interface traps at the SiO2/4H-SiC interface with energy levels near the SiC conduction band edge. Furthermore, it is observed that if potassium ions residing at the SiO2/SiC interface are moved towards the sample surface by exposing them to ultraviolet light (UV) under an applied depletion bias stress at high temperatures the interface traps become electrically active again and are evidently depassivated. These findings are in line with recently a published model of the effect of sodium on such interface states

Conductance technique measurements of the density of interface states between ZnS:Mn andp‐silicon

1991 ◽  
Vol 70 (9) ◽  
pp. 4950-4957 ◽  
Author(s):  
Andrew J. Simons ◽  
Mohammed H. Tayarani‐Najaran ◽  
Clive B. Thomas
Keyword(s):  
Interface States ◽  
Conductance Technique ◽  
Density Of Interface States

Accuracy of the Energy Distribution of the Interface States at the SiO2/SiC Interface by Conductance Method

2016 ◽  
Vol 858 ◽  
pp. 437-440
Author(s):  
Munetaka Noguchi ◽  
Toshiaki Iwamatsu ◽  
Hiroyuki Amishiro ◽  
Hiroshi Watanabe ◽  
Shuhei Nakata ◽  
...  
Keyword(s):  
Energy Level ◽  
Energy Distribution ◽  
Conduction Band ◽  
Interface States ◽  
Oxide Semiconductor ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Electrical Characteristics ◽  
Conductance Method ◽  
Effect Transistor

The electrical characteristics of the SiC metal-oxide-semiconductor field effect transistor (MOSFET) have been limited by large amount of states at the SiO2/SiC interface. In this study, the accuracy of the energy level of the interface states extracted by hypothetical high frequency extreme, which is conventionally used, is experimentally examined. Conductance measurements at low temperature between 65 K and 100 K reveal that the extracted energy distribution of the interface states at nitrided SiO2/SiC interface close to the conduction band edge depends on the measurement temperature. It is demonstrated that conductance method at 65K enables us more accurate evaluation of the interface states at the SiO2/SiC interface and found that the interface states density (Dit) of nitride SiO2/SiC interface is over 1013 cm-2eV-1 at energy level of 0.1 eV below the conduction band edge.

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