A study of MgF2 thin film growth in the atomic layer deposition process by multi-scale simulations

2021 ◽  
Vol 191 ◽  
pp. 110327
Author(s):  
Sung Hoon Lee ◽  
HyunHang Park ◽  
Hoon Kim ◽  
Ming-Huang Huang
Eksergi ◽  
2020 ◽  
Vol 17 (2) ◽  
pp. 56
Author(s):  
Edy Riyanto ◽  
Erie Martides ◽  
Endro Junianto ◽  
Budi Prawara

In this review, the discussion emphasized on the growth mechanisms of atomic layer deposition which consists of a theoretical model and experimentally growth as well as the measurement testing as evidences. The deposition process description with some testing evidences can be used to facilitate in the effort to understand the basic concept of ALD growth mechanisms. Some metal oxides like Al2O3, HfO2, and TiO2 with these employed precursors are typically used for the detailed illustration during the reaction steps. Although the surface chemistry of ALD process has been well understood, systematic description which combine a theoretical and experimentally growth mechanism is still missing. This paper aims to provide a better understanding of ALD growth mechanisms and surface chemistry which eventually able to contribute on the thin film growth processing.


Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...


2011 ◽  
Vol 11 (2) ◽  
pp. 1577-1580 ◽  
Author(s):  
Yong Jun Park ◽  
Dong Ryeol Lee ◽  
Hyun Hwi Lee ◽  
Han-Bo-Ram Lee ◽  
Hyungjun Kim ◽  
...  

2010 ◽  
Vol 16 (47) ◽  
pp. 13925-13929 ◽  
Author(s):  
Manjunath Puttaswamy ◽  
Kenneth Brian Haugshøj ◽  
Leif Højslet Christensen ◽  
Peter Kingshott

2013 ◽  
Vol 2 (10) ◽  
pp. P91-P93 ◽  
Author(s):  
J. R. Kim ◽  
H. Lim ◽  
S. Park ◽  
Y. J. Choi ◽  
S. Suh ◽  
...  

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