Atomic layer deposition of rutile and TiO2-II from TiCl4 and O3 on sapphire: Influence of substrate orientation on thin film structure

2015 ◽  
Vol 428 ◽  
pp. 86-92 ◽  
Author(s):  
Kristel Möldre ◽  
Lauri Aarik ◽  
Hugo Mändar ◽  
Ahti Niilisk ◽  
Raul Rammula ◽  
...  
1996 ◽  
Vol 169 (3) ◽  
pp. 496-502 ◽  
Author(s):  
Jaan Aarik ◽  
Aleks Aidla ◽  
Väino Sammelselg ◽  
Hele Siimon ◽  
Teet Uustare

2014 ◽  
Vol 118 (12) ◽  
pp. 6132-6139 ◽  
Author(s):  
Francesco Carlà ◽  
Francesca Loglio ◽  
Andrea Resta ◽  
Roberto Felici ◽  
Elisa Lastraioli ◽  
...  

Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...


2013 ◽  
Vol 542 ◽  
pp. 219-224 ◽  
Author(s):  
Väino Sammelselg ◽  
Ivan Netšipailo ◽  
Aleks Aidla ◽  
Aivar Tarre ◽  
Lauri Aarik ◽  
...  

2014 ◽  
Vol 2 (36) ◽  
pp. 15044-15051 ◽  
Author(s):  
Erik Østreng ◽  
Knut Bjarne Gandrud ◽  
Yang Hu ◽  
Ola Nilsen ◽  
Helmer Fjellvåg

Atomic layer deposition (ALD) has been used to prepare nano-structured cathode films for Li-ion batteries of V2O5 from VO(thd)2 and ozone at 215 °C.


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