Modulating the Schottky barriers in MoS2/MXenes heterostructures via surface functionalization and electric field

2019 ◽  
Vol 480 ◽  
pp. 199-204 ◽  
Author(s):  
Qiong Peng ◽  
Chen Si ◽  
Jian Zhou ◽  
Zhimei Sun
2020 ◽  
Vol 101 (23) ◽  
Author(s):  
Chuong V. Nguyen ◽  
M. Idrees ◽  
Huynh V. Phuc ◽  
Nguyen N. Hieu ◽  
Nguyen T. T. Binh ◽  
...  

Author(s):  
Khomsan Ruangwong ◽  
Chayaporn Thammaniphit ◽  
Sawita Suwannarat ◽  
Weerawoot Kanokbannakorn ◽  
Siwapon Srisonphan

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Yu Lan ◽  
Li-Xin Xia ◽  
Tao Huang ◽  
Weiping Xu ◽  
Gui-Fang Huang ◽  
...  

Abstract Two-dimensional (2D) transition metal dichalcogenides with intrinsically passivated surfaces are promising candidates for ultrathin optoelectronic devices that their performance is strongly affected by the contact with the metallic electrodes. Herein, first-principle calculations are used to construct and investigate the electronic and interfacial properties of 2D MoTe2 in contact with a graphene electrode by taking full advantage of them. The obtained results reveal that the electronic properties of graphene and MoTe2 layers are well preserved in heterostructures due to the weak van der Waals interlayer interaction, and the Fermi level moves toward the conduction band minimum of MoTe2 layer thus forming an n type Schottky contact at the interface. More interestingly, the Schottky barrier height and contact types in the graphene-MoTe2 heterostructure can be effectively tuned by biaxial strain and external electric field, which can transform the heterostructure from an n type Schottky contact to a p type one or to Ohmic contact. This work provides a deeper insight look for tuning the contact types and effective strategies to design high performance MoTe2-based Schottky electronic nanodevices.


RSC Advances ◽  
2017 ◽  
Vol 7 (47) ◽  
pp. 29350-29356 ◽  
Author(s):  
Fang Zhang ◽  
Wei Li ◽  
Yaqiang Ma ◽  
Yanan Tang ◽  
Xianqi Dai

Evolution of Schottky barriers of ΦBp and ΦBn in graphene/WS2 heterostructures as a function of external electric field.


1968 ◽  
Vol 11 (2) ◽  
pp. 201-204 ◽  
Author(s):  
G.H. Parker ◽  
T.C. McGill ◽  
C.A. Mead ◽  
D. Hoffman

Author(s):  
G. F. Rempfer

In photoelectron microscopy (PEM), also called photoemission electron microscopy (PEEM), the image is formed by electrons which have been liberated from the specimen by ultraviolet light. The electrons are accelerated by an electric field before being imaged by an electron lens system. The specimen is supported on a planar electrode (or the electrode itself may be the specimen), and the accelerating field is applied between the specimen, which serves as the cathode, and an anode. The accelerating field is essentially uniform except for microfields near the surface of the specimen and a diverging field near the anode aperture. The uniform field forms a virtual image of the specimen (virtual specimen) at unit lateral magnification, approximately twice as far from the anode as is the specimen. The diverging field at the anode aperture in turn forms a virtual image of the virtual specimen at magnification 2/3, at a distance from the anode of 4/3 the specimen distance. This demagnified virtual image is the object for the objective stage of the lens system.


Author(s):  
Patrick P. Camus

The theory of field ion emission is the study of electron tunneling probability enhanced by the application of a high electric field. At subnanometer distances and kilovolt potentials, the probability of tunneling of electrons increases markedly. Field ionization of gas atoms produce atomic resolution images of the surface of the specimen, while field evaporation of surface atoms sections the specimen. Details of emission theory may be found in monographs.Field ionization (FI) is the phenomena whereby an electric field assists in the ionization of gas atoms via tunneling. The tunneling probability is a maximum at a critical distance above the surface,xc, Fig. 1. Energy is required to ionize the gas atom at xc, I, but at a value reduced by the appliedelectric field, xcFe, while energy is recovered by placing the electron in the specimen, φ. The highest ionization probability occurs for those regions on the specimen that have the highest local electric field. Those atoms which protrude from the average surfacehave the smallest radius of curvature, the highest field and therefore produce the highest ionizationprobability and brightest spots on the imaging screen, Fig. 2. This technique is called field ion microscopy (FIM).


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