Outstanding radiation tolerance and mechanical behavior in ultra-fine nanocrystalline Al1.5CoCrFeNi high entropy alloy films under He ion irradiation

2020 ◽  
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Liwei Lin ◽  
Ran Ang ◽  
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Bo Liu ◽  
...  
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Ke Jin ◽  
Xin Yi ◽  
Zhaohui Dong ◽  
Xun Guo ◽  
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2016 ◽  
Vol 113 ◽  
pp. 230-244 ◽  
Author(s):  
N.A.P. Kiran Kumar ◽  
C. Li ◽  
K.J. Leonard ◽  
H. Bei ◽  
S.J. Zinkle

2020 ◽  
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pp. 151955 ◽  
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Feng Fang ◽  
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Entropy ◽  
2020 ◽  
Vol 22 (2) ◽  
pp. 234
Author(s):  
Chunxia Jiang ◽  
Rongbin Li ◽  
Xin Wang ◽  
Hailong Shang ◽  
Yong Zhang ◽  
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In this study, high-entropy alloy films, namely, AlCrTaTiZr/AlCrTaTiZr-N, were deposited on the n-type (100) silicon substrate. Then, a copper film was deposited on the high-entropy alloy films. The diffusion barrier performance of AlCrTaTiZr/AlCrTaTiZr-N for Cu/Si connect system was investigated after thermal annealing for an hour at 600 °C, 700 °C, 800 °C, and 900 °C. There were no Cu-Si intermetallic compounds generated in the Cu/AlCrTaTiZr/AlCrTaTiZr-N/Si film stacks after annealing even at 900 °C through transmission electron microscopy (TEM) and atomic probe tomography (APT) analysis. The results indicated that AlCrTaTiZr/AlCrTaTiZr-N alloy films can prevent copper diffusion at 900 °C. The reason was investigated in this work. The amorphous structure of the AlCrTaTiZr layer has lower driving force to form intermetallic compounds; the lattice mismatch between the AlCrTaTiZr and AlCrTaTiZ-rN layers increased the diffusion distance of the Cu atoms and the difficulty of the Cu atom diffusion to the Si substrate.


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