One-step Synthesis of Oxygen-defects Modified Ta2O5 Nanosheets with High Photocatalytic Performance by Chemical Vapor Deposition Method

2021 ◽  
pp. 150776
Author(s):  
Zheng Li ◽  
Zijian He ◽  
Huajie Lai ◽  
Yuan He ◽  
Zifan Zhu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photocatalytic Performance ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Oxygen Defects ◽  
One Step

Optical performance and growth mechanism of a 2D WS2–MoWS2 hybrid heterostructure fabricated by a one-step CVD strategy

CrystEngComm ◽  
2020 ◽  
Vol 22 (4) ◽  
pp. 660-665 ◽  
Author(s):  
Fei Chen ◽  
Yi Yao ◽  
Weitao Su ◽  
Su Ding ◽  
Li Fu
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Large Scale ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Optical Performance ◽  
One Step

A large-scale 2D WS2-Mo1−xWxS2 hybrid heterostructure can be realized by the reaction of S powder and sputtered Mo/W films through the chemical vapor deposition method.

scholarly journals Fabrication of efficient planar perovskite solar cells using a one-step chemical vapor deposition method

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Mohammad Mahdi Tavakoli ◽  
Leilei Gu ◽  
Yuan Gao ◽  
Claas Reckmeier ◽  
Jin He ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Perovskite Solar Cells ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
One Step

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

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