Influence of the nanostructure on the electric transport properties of resistive switching cluster-assembled gold films

2022 ◽  
pp. 152485
Author(s):  
Francesca Borghi ◽  
Matteo Mirigliano ◽  
Davide Dellasega ◽  
Paolo Milani
Keyword(s):  
Transport Properties ◽  
Resistive Switching ◽  
Gold Films ◽  
Electric Transport

First-principles study on the dielectric and transport properties of the LiNbO3-type CdPbO3

2017 ◽  
Vol 31 (05) ◽  
pp. 1750032
Author(s):  
Jing Zhang ◽  
San Huang Ke ◽  
Derwyn A. Rowlands
Keyword(s):  
Transport Properties ◽  
First Principles ◽  
Electronic Devices ◽  
Differential Resistance ◽  
Uniaxial Crystal ◽  
Dielectric Constants ◽  
First Principles Calculation ◽  
Electric Transport ◽  
Phonon Modes ◽  
Ir And Raman

Using first-principles calculation method, we have investigated the zone-center phonon modes, dielectric and transport properties of the LiNbO3-type CdPbO3. The results show that the relatively large peaks of infrared (IR) and Raman spectra mainly come from the [Formula: see text] and [Formula: see text] modes, respectively. The dielectric constant calculations reveal that this compound is positive uniaxial crystal and has the large dielectric constants. By investigating the electric transport properties using gold as electrode, the interesting negative differential resistance (NDR) effect can be observed, which reveals this compound should have important application in semiconducting electronic devices.

ChemInform Abstract: Synthesis, Crystal Structures, Magnetic and Electric Transport Properties of Eu11InSb9and Yb11InSb9.

ChemInform ◽  
2008 ◽  
Vol 39 (6) ◽  
Author(s):  
Sheng-qing Xia ◽  
Jonathan Hullmann ◽  
Svilen Bobev ◽  
Arif Ozbay ◽  
Edmund R. Nowak ◽  
...  
Keyword(s):  
Transport Properties ◽  
Crystal Structures ◽  
Electric Transport

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

scholarly journals Long- and short-range structures of Ti1−xHfxNi1.0/1.1Sn half-Heusler compounds and their electric transport properties

CrystEngComm ◽  
2019 ◽  
Vol 21 (21) ◽  
pp. 3330-3342 ◽  
Author(s):  
Matylda N. Guzik ◽  
Matthias Schrade ◽  
Raluca Tofan ◽  
Patricia A. Carvalho ◽  
Kristian Berland ◽  
...  
Keyword(s):  
Experimental Study ◽  
Transport Properties ◽  
Short Range ◽  
Heusler Compounds ◽  
Electric Transport

Experimental study reveals the apparent ordered arrangement of excess Ni at the nominally vacant sublattice in thermoelectric Ti1−xHfxNi1.0/1.1Sn half-Heusler compounds.

scholarly journals Anomalous electrical conduction and negative temperature coefficient of resistance in nanostructured gold resistive switching films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
M. Mirigliano ◽  
S. Radice ◽  
A. Falqui ◽  
A. Casu ◽  
F. Cavaliere ◽  
...  
Keyword(s):  
Grain Boundaries ◽  
Temperature Coefficient ◽  
Resistive Switching ◽  
Electrical Conduction ◽  
Negative Temperature Coefficient ◽  
Negative Temperature ◽  
High Density ◽  
Gold Films ◽  
Temperature Coefficient Of Resistance ◽  
Nanostructured Gold

AbstractWe report the observation of non-metallic electrical conduction, resistive switching, and a negative temperature coefficient of resistance in nanostructured gold films above the electrical percolation and in strong-coupling regime, from room down to cryogenic temperatures (24 K). Nanostructured continuous gold films are assembled by supersonic cluster beam deposition of Au aggregates formed in the gas phase. The structure of the cluster-assembled films is characterized by an extremely high density of randomly oriented crystalline nanodomains, separated by grain boundaries and with a large number of lattice defects. Our data indicates that space charge limited conduction and Coulomb blockade are at the origin of the anomalous electrical behavior. The high density of extended defects and grain boundaries causes the localization of conduction electrons over the entire investigated temperature range.

Influence of Eu Substitution for Y on the High Temperature Electric Transport Properties of YBaCo4O7+δ

2013 ◽  
Vol 724-725 ◽  
pp. 1029-1032 ◽  
Author(s):  
Qing Lin He ◽  
Feng Gao ◽  
Hong Zhang Song ◽  
Xing Hu
Keyword(s):  
Activation Energy ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Transport Properties ◽  
Power Factor ◽  
Electric Resistivity ◽  
Electric Transport ◽  
Seebeck Coefficients ◽  
Higher Power ◽  
Unmodified Sample

The electric resistivity, Seebeck coefficients and power factors of Y1-xEuxBaCo4O7+δ(x = 0.0, 0.05, 0.1, 0.2) ceramics were investigated from 400K to 1000K. The results show that the presence of Eu decreases electrical resistivity, and has little effect on Seebeck coefficients of the samples. The activation energy of conductivity is calculated by the Arrhenius plots in the semiconductive region. According to power factors, the optimum Eu substitution amount is x = 0.1, which results in a higher power factor of 67.5 μWm-1K-2at 1000K, 30% higher than unmodified sample YBaCo4O7+δ.

Transport properties of Ar+ irradiated resistive switching BiFeO3 thin films

2015 ◽  
Vol 336 ◽  
pp. 354-358 ◽  
Author(s):  
L. Jin ◽  
Y. Shuai ◽  
X. Ou ◽  
W.B. Luo ◽  
C.G. Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Bifeo3 Thin Films
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