Effect of ammonia (NH3) plasma treatment on silicon nitride (SiNx) gate dielectric for organic thin film transistor with soluble organic semiconductor

A polyhedral oligomeric silsesquioxane derivative (POSS-OXT) containing photo-curable 4-membered cyclic oxetane functional groups was used as a gate dielectric of organic field effect transistor. The POSS-OXT was cross-linked and completely solidified by UV irradiation in the presence of a selected photo acid generator, and pinhole free uniform thin film was obtained. We fabricated a metal/insulator/metal device of Au/POSS-OXT (300 nm)/Au with area of 0.7 mm2 and the measured leakage current and capacitance of the device to evaluate the insulating properties of the POSS-OXT thin film. The maximum current was about 0.25 nA when 40 V was applied to the device. The observed values of the capacitance per unit area and dissipation factor were 11.4 nF/cm2 and 0.025, respectively. We fabricated an organic thin film transistor with pentacene as the active semiconductor and the photo-cross-linked POSS-OXT as an insulator. A field effect carrier mobility of 0.03 cm2/V·s was obtained with the device.

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Organic Thin-Film Transistor Memory Devices Based on Charge Trapping in Metallic Nanoparticles Embedded in Gate Dielectric Layer

ECS Meeting Abstracts ◽

10.1149/ma2011-01/19/1244 ◽

2011 ◽

Keyword(s):

Thin Film ◽

Dielectric Layer ◽

Metallic Nanoparticles ◽

Gate Dielectric ◽

Thin Film Transistor ◽

Charge Trapping ◽

Memory Devices ◽

Organic Thin Film ◽

Organic Thin Film Transistor

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The Photocurrent Characteristic Analysis of the Copper Phthalocyanine Organic Thin Film Transistor Irradiated by 700 nm Monochromatic Light

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.981.951 ◽

2014 ◽

Vol 981 ◽

pp. 951-954

Author(s):

Yue Zhang ◽

Dong Xing Wang ◽

Jia Bin Chen ◽

Yue Shan ◽

Jing Hua Yin ◽

...

Keyword(s):

Thin Film ◽

Organic Semiconductor ◽

Copper Phthalocyanine ◽

Thin Film Transistor ◽

Monochromatic Light ◽

Semiconductor Material ◽

Organic Thin Film ◽

Organic Thin Film Transistor ◽

Characteristic Analysis ◽

Current Increase

By using organic semiconductor CuPc as photosensitive materials, we prepared an organic thin film transistor with the vertical structure consisted of metal Cu/ organic semiconductor CuPc/ Al/ organic semiconductor CuPc/ indium tin oxide ITO. CuPc semiconductor material has good photosensitive properties in the 700 nm light. When the light signal irradiates organic semiconductor photosensitive material, the electron-hole exciton is separated into photocurrent in built-in electric field produced by organic semiconductor material/ metal schottky contact. It transforms into the driving current of organic photoelectric triode. By using its current amplification effect, the output current increase obviously. The test result shows that the I-V characteristics of the transistor are obvious unsaturated triode characteristics. When using 700 nm light to irradiate the device, the working current of the device increases obviously.

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UV-Ozone Effect of the Organic Thin Film Transistor with PVP Gate Dielectric in Low Temperature

10.7567/ssdm.2011.b-3-3 ◽

2011 ◽

Author(s):

H. J. Yun ◽

K. H. Baek ◽

L. M. Do ◽

S. Y. Lee ◽

K. S. Jeong ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Gate Dielectric ◽

Thin Film Transistor ◽

Organic Thin Film ◽

Organic Thin Film Transistor ◽

Uv Ozone

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A New Top Gate Pentacene Organic Thin Film Transistor Employing Vapor Deposited Polyimide as A Gate Dielectric

MRS Proceedings ◽

10.1557/proc-0937-m10-51 ◽

2006 ◽

Vol 937 ◽

Author(s):

Chang-Wook Han ◽

Sang-Geun Park ◽

Chang-Yeon Kim ◽

Min-Koo Han ◽

Gun-Woo Hyung ◽

...

Keyword(s):

Thin Film ◽

Breakdown Voltage ◽

Threshold Voltage ◽

Gate Dielectric ◽

Thin Film Transistor ◽

Polyimide Film ◽

Organic Thin Film ◽

Organic Thin Film Transistor ◽

Ft Ir

ABSTRACTA top gate pentacene TFT employing vapor deposited polyimide as a gate dielectric was fabricated. Polyimide was co-evaporated from 6FDA and ODA monomers and annealed at 150 °C in vacuum. The degree of imidization was verified by FT-IR. A breakdown voltage of 0.9 MV/cm of polyimide film was measured by MIM structure. A top gate pentacene TFT with W/L=25 has 0.01 cm2/Vs as a mobility, about 103 as an on-off ratio (In/off), −7.5V as a threshold voltage and 9 V per decade as a sub-threshold slope.

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