Influence of Ga(Al)As substrates on surface morphology and critical thickness of InGaAs quantum dots

2019 ◽  
Vol 19 (5) ◽  
pp. 557-562
Author(s):  
Yi Wang ◽  
Xiang Guo ◽  
Jiemin Wei ◽  
Chen Yang ◽  
Zijiang Luo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Surface Morphology ◽  
Critical Thickness

Surface morphology of AlN and size dispersion of GaN quantum dots

2005 ◽  
Vol 274 (3-4) ◽  
pp. 387-393 ◽  
Author(s):  
Akihiro Matsuse ◽  
Nicolas Grandjean ◽  
Benjamin Damilano ◽  
Jean Massies
Keyword(s):  
Quantum Dots ◽  
Surface Morphology ◽  
Size Dispersion

Impact of Annealing on Surface Morphology and Photoluminescence of Self-Assembled Ge and Si Quantum Dots

2014 ◽  
Vol 14 (7) ◽  
pp. 5266-5271 ◽  
Author(s):  
Alireza Samavati ◽  
Zulkafli Othaman ◽  
Shadab Dabagh ◽  
Sib Krishna Ghoshal
Keyword(s):  
Quantum Dots ◽  
Surface Morphology ◽  
Self Assembled ◽  
Si Quantum Dots

Stress Driven Patterning of Epitaxial Films

1993 ◽  
Vol 318 ◽  
Author(s):  
Michael A. Grinfeld
Keyword(s):  
Surface Energy ◽  
Surface Morphology ◽  
Film Thickness ◽  
Critical Thickness ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Two Dimensional ◽  
Dimensional Lattice ◽  
One Dimensional ◽  
Periodic Spacing

ABSTRACTWe study possible morphologies of epitaxial films atop attractive substrates appearing as a result of competition of misfit stresses, van der Waals forces and surface energy. Corresponding formula for the critical thickness of the dislocation-free Stranski-Krastanov pattern is established for the isotropic deformable films and substrates. If the film thickness exceeds the critical magnitude the layer-by-layer pattern switches to islanding. At the first stage the islands have a shape of striae (i.e. long parallel trenches with periodic spacing). We discuss also i)the circumstances in which surface morphology of the film corresponds to a two-dimensional superlattice of islands rather than a one dimensional lattice of striae and ii)the influence of a buffer inter-layer.

Surface morphology evolution during the overgrowth of large InAs–GaAs quantum dots

2001 ◽  
Vol 79 (22) ◽  
pp. 3615-3617 ◽  
Author(s):  
P. B. Joyce ◽  
T. J. Krzyzewski ◽  
G. R. Bell ◽  
T. S. Jones
Keyword(s):  
Quantum Dots ◽  
Surface Morphology ◽  
Morphology Evolution ◽  
Surface Morphology Evolution

Efficient solution-processed small-molecule solar cells by insertion of graphene quantum dots

Nanoscale ◽  
2014 ◽  
Vol 6 (24) ◽  
pp. 15175-15180 ◽  
Author(s):  
Dong Hwan Wang ◽  
Jung Kyu Kim ◽  
Sang Jin Kim ◽  
Byung Hee Hong ◽  
Jong Hyeok Park
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Surface Morphology ◽  
Charge Transport ◽  
Small Molecule ◽  
Efficient Solution ◽  
Fill Factor ◽  
Graphene Quantum Dots ◽  
Effective Surface ◽  
Solution Processed

Solution-processed small-molecule solar cells are demonstrated by insertion of graphene quantum dots (GQDs). The GQDs play an important role in increasing current density and fill factor which correlate with improved EQE and effective surface morphology. The multiple scattering and a reduced charge transport resistance lead to enhanced performances.

scholarly journals Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time

2019 ◽  
Vol 7 (1) ◽  
pp. 015903 ◽  
Author(s):  
Yangfeng Li ◽  
Zijing Jin ◽  
Yu Han ◽  
Chunyu Zhao ◽  
Jie Huang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Surface Morphology ◽  
Growth Interruption

Effects of growth parameters on the surface morphology of InAs quantum dots grown on GaAs/Ge/Si1−xGex/Si substrate

2011 ◽  
Vol 323 (1) ◽  
pp. 426-430 ◽  
Author(s):  
Y.Y. Liang ◽  
S.F. Yoon ◽  
C.Y. Ngo ◽  
H. Tanoto ◽  
K.P. Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Surface Morphology ◽  
Growth Parameters ◽  
Si Substrate ◽  
Inas Quantum Dots
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