Fe-assisted catalytic chemical vapor deposition of graphene-like carbon nanosheets over SrO

Carbon ◽  
2021 ◽  
Vol 171 ◽  
pp. 444-454
Author(s):  
Wen Qian Chen ◽  
Yi Heng Cheong ◽  
Xiaoxu Fu ◽  
Li Ya Ge ◽  
Andrei Veksha ◽  
...  
1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.


2011 ◽  
Vol 364 ◽  
pp. 232-237 ◽  
Author(s):  
S.Y. Lim ◽  
M.M. Norani

Catalyst plays a crucial role in determining the characteristics of carbon nanotubes (CNTs) produced by using thermal catalytic chemical vapor deposition (CVD). It is essential to investigate how the catalyst preparation affects the characteristics of CNTs because certain application demands specific size for optimum performance. This study reports the effect of the types of catalyst and the duration of the catalyst pre-treatment (wet etching time, dry etching time and ball milling) on the diameter of CNTs. The synthesized CNTs samples were characterized by scanning and transmission electron microscopy and Raman spectroscopy. Wet etching (2M hydrofluoric acid) time was varied from 1 to 2.5 hrs and the diameter range was found to be in the range of 23 to 52 nm. The diameter range for CNTs produced for 3 hrs and 5 hrs of dry etching treatment (with ammonia gas) are 38 to 51 nm and 23 to 48 nm, respectively. The diameter size of CNTs produced using Ni (14 to 25 nm) was found to be smaller than Fe (38 to 51 nm). There is a significant decrease in the diameter of CNTs by prolonging the wet etching period. Shorter and curly shaped CNTs can also be obtained by using Ni as the catalyst. Keywords: chemical vapor deposition, carbon nanotubes, catalyst pretreatment


2017 ◽  
Vol 5 (16) ◽  
pp. 4068-4074 ◽  
Author(s):  
Xinliang Li ◽  
Xiaowei Yin ◽  
Meikang Han ◽  
Changqing Song ◽  
Hailong Xu ◽  
...  

Ti3C2TxMXenes modified within situgrown carbon nanotubes (CNTs) are fabricatedviaa simple catalytic chemical vapor deposition (CVD) process.


RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).


Carbon ◽  
2004 ◽  
Vol 42 (14) ◽  
pp. 2867-2872 ◽  
Author(s):  
Jianjun Wang ◽  
Mingyao Zhu ◽  
Ron A. Outlaw ◽  
Xin Zhao ◽  
Dennis M. Manos ◽  
...  

Author(s):  
Shu KONDO ◽  
Daiki YAMAMOTO ◽  
Kamal Prasad Prasad Sharma ◽  
Yazid Yaakob ◽  
Takahiro SAIDA ◽  
...  

Abstract We performed single-walled carbon nanotube (SWCNT) growth on flexible stainless-steel foils by applying alcohol catalytic chemical vapor deposition using an Ir catalyst with an alumina buffer layer. When the alumina thickness was 90 nm, vertically aligned SWCNTs with a thickness of 4.6 m were grown. In addition, Raman results showed that the diameters of most SWCNTs were distributed below 1.1 nm. Compared with conventional chemical vapor deposition growth where Si wafers are used as substrates, this method is more cost effective and easier to extend for mass production of small-diameter SWCNTs.


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