Double relaxation emission of Sn2+ activator in tin fluorophosphate glass for optoelectronic device applications

2020 ◽  
Vol 399 ◽  
pp. 125270
Author(s):  
Wei Mao ◽  
Wenqing Xie ◽  
Panpan Li ◽  
Yang Lu ◽  
Yongmin Duan ◽  
...  
Author(s):  
Joanna L. Batstone

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.


2011 ◽  
Vol 1 (2) ◽  
pp. 123-139
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi

2011 ◽  
Vol 1 (2) ◽  
pp. 123-139 ◽  
Author(s):  
Saeed Fathololoumi ◽  
Hieu P. T. Nguyen ◽  
Zetian Mi

CrystEngComm ◽  
2020 ◽  
Vol 22 (45) ◽  
pp. 7864-7869
Author(s):  
Maojun Sun ◽  
Wei Wang ◽  
Qinghua Zhao ◽  
Xuetao Gan ◽  
Yuanhui Sun ◽  
...  

Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications.


2017 ◽  
Vol 8 (21) ◽  
pp. 3286-3293 ◽  
Author(s):  
Bin Mu ◽  
Xingtian Hao ◽  
Jian Chen ◽  
Qian Li ◽  
Chunxiu Zhang ◽  
...  

Well-prepared side-chain discotic liquid crystal polymers with shorter spacers in ordered columnar phases are fascinating and promising cost-effective, solution-processable organic semiconducting materials for various potential optoelectronic device applications.


2021 ◽  
Vol 50 (5) ◽  
pp. 2576-2583
Author(s):  
Uche Paul Onochie ◽  
Sunday Chukwuyem Ikpeseni ◽  
Anthony Egwu Igweoko ◽  
Hilary Ijeoma Owamah ◽  
Chinecherem Collins Aluma ◽  
...  

2021 ◽  
Vol 32 (7) ◽  
pp. 9392-9399
Author(s):  
Hosam M. Gomaa ◽  
I. S. Yahia ◽  
B. M. A. Makram ◽  
Ahmed H. El-Dosokey ◽  
Saeid M. Elkatlawy

Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1831-1853
Author(s):  
Jaeho Jeon ◽  
Yajie Yang ◽  
Haeju Choi ◽  
Jin-Hong Park ◽  
Byoung Hun Lee ◽  
...  

AbstractTwo-dimensional (2D) layers of transition metal carbides, nitrides, or carbonitrides, collectively referred to as MXenes, are considered as the new family of 2D materials for the development of functional building blocks for optoelectronic and photonic device applications. Their advantages are based on their unique and tunable electronic and optical properties, which depend on the modulation of transition metal elements or surface functional groups. In this paper, we have presented a comprehensive review of MXenes to suggest an insightful perspective on future nanophotonic and optoelectronic device applications based on advanced synthesis processes and theoretically predicted or experimentally verified material properties. Recently developed optoelectronic and photonic devices, such as photodetectors, solar cells, fiber lasers, and light-emitting diodes are summarized in this review. Wide-spectrum photodetection with high photoresponsivity, high-yield solar cells, and effective saturable absorption were achieved by exploiting different MXenes. Further, the great potential of MXenes as an electrode material is predicted with a controllable work function in a wide range (1.6–8 eV) and high conductivity (~104 S/cm), and their potential as active channel material by generating a tunable energy bandgap is likewise shown. MXene can provide new functional building blocks for future generation nanophotonic device applications.


1998 ◽  
Vol 189-190 ◽  
pp. 227-230 ◽  
Author(s):  
Atsushi Masuda ◽  
Shinya Morita ◽  
Hideki Shigeno ◽  
Akiharu Morimoto ◽  
Tatsuo Shimizu ◽  
...  

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