Tailoring of optical band gap and electrical conductivity in a-axis oriented Ni doped Chromium Oxide thin films

2018 ◽  
Vol 44 (10) ◽  
pp. 11187-11195 ◽  
Author(s):  
Saima Shaukat ◽  
M. Khaleeq-ur-Rahman ◽  
Usman Ilyas ◽  
Shahzad Naseem ◽  
I.M. Dildar ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Chromium Oxide ◽  
Optical Band Gap ◽  
Oxide Thin Films

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

scholarly journals Effects of Sintering Atmosphere on the Optical, Thermal and Electrical Properties of Inkjet Printed ZnxCu(1-x)Fe2O4 Thin Films

2021 ◽  
Vol 81 (2) ◽  
pp. 25-35
Author(s):  
Lim Joon Hoong
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Optical Band Gap ◽  
Electronic Band Structure ◽  
Copper Ferrite ◽  
Electronic Band ◽  
Sintering Atmosphere ◽  
P Type

The effects of sintering atmosphere on the optical, thermal and electric properties of inkjet printed ZnxCu(1-x)Fe2O4 thin films have been investigated. The thin film samples were sintered separately in vacuum and oxygen. The obtained samples were then characterized by X-ray diffraction (XRD), optical band gap, electrical conductivity, Seebeck coefficient and thermal conductivity. XRD analysis showed that the fabricated samples have a cubic spinel structure of zinc copper ferrite regardless of the sintering atmosphere. The electrical conductivity of ZnxCu(1-x)Fe2O4 thin films sintered in oxygen was about 5 % higher compared to ZnxCu(1-x)Fe2O4 thin films sintered in vacuum. The optical band gap shows that the samples sintered in oxygen had smaller band gap compared to samples sintered in vacuum. The electronic band structure simulated through ABINIT shows ZnxCu(1-x)Fe2O4 is an indirect band gap material. A smaller electronic band gap was observed in O2 rich condition and was in agreement with the optical band gap and electrical conductivity test results. Seebeck coefficient of ZnxCu(1-x)Fe2O4 thin films sintered in oxygen remained positive , confirming charge transport by hole carries as p-type semiconductors. A change from p-type to n-type semiconductors was observed when ZnxCu(1-x)Fe2O4 thin films sintered in vacuum.

Spin Speed Dependence of Optical Band Gap of SOL Gel Spin Coated Zinc Oxide Thin Films

2014 ◽  
Vol 2 (2) ◽  
pp. 6-9
Author(s):  
Rajesh Kumar ◽  
◽  
Aakanksha Sahu ◽  
Narinder Arora ◽  
Rabia Sareen ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Oxide Thin Films ◽  
Spin Speed ◽  
Speed Dependence

Transparent p- and n-Type Conductive Oxides With Delafossite Structure

2000 ◽  
Vol 623 ◽  
Author(s):  
Hiroshi Yanagi ◽  
Kazushige Ueda ◽  
Shuntaro Ibuki ◽  
Tomomi Hase ◽  
Hideo Hosono ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Delafossite Structure ◽  
P Type ◽  
Type Conduction

AbstractThin films of CuAlO2, CuGaO2 and AglnO2 with delafossite structure were prepared on sapphire substrates by pulsed laser deposition method. The resulting CuA102 thin films exhibited p-type conduction and the electrical conductivity at room temperature was 0.3 Scm−1. CuGaO2 thin films were grown epitaxially on μ-Al2O3 (001) surface and showed p-type conduction (conductivity at room temperature = 0.06 S cm−1). The optical band gap was estimated to be ∼3.5 eV for CuAlO2 or ∼3.6 eV for CuGaO2. On the other hand, the thin film of Sn doped AglnO2 exhibited n-type conduction. The optical band gap and electrical conductivity at room temperature were ∼4.1 eV and 70 S cm−1, respectively. The recent work demonstrates the validity of our chemical design concept for p- and n-type transparent conducting oxides, providing an opportunity for realization of transparent p-n junction using delafossite-type oxides.

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

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