scholarly journals Effects of Sintering Atmosphere on the Optical, Thermal and Electrical Properties of Inkjet Printed ZnxCu(1-x)Fe2O4 Thin Films

2021 ◽  
Vol 81 (2) ◽  
pp. 25-35
Author(s):  
Lim Joon Hoong
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Band Gap ◽  
Optical Band Gap ◽  
Electronic Band Structure ◽  
Copper Ferrite ◽  
Electronic Band ◽  
Sintering Atmosphere ◽  
P Type

The effects of sintering atmosphere on the optical, thermal and electric properties of inkjet printed ZnxCu(1-x)Fe2O4 thin films have been investigated. The thin film samples were sintered separately in vacuum and oxygen. The obtained samples were then characterized by X-ray diffraction (XRD), optical band gap, electrical conductivity, Seebeck coefficient and thermal conductivity. XRD analysis showed that the fabricated samples have a cubic spinel structure of zinc copper ferrite regardless of the sintering atmosphere. The electrical conductivity of ZnxCu(1-x)Fe2O4 thin films sintered in oxygen was about 5 % higher compared to ZnxCu(1-x)Fe2O4 thin films sintered in vacuum. The optical band gap shows that the samples sintered in oxygen had smaller band gap compared to samples sintered in vacuum. The electronic band structure simulated through ABINIT shows ZnxCu(1-x)Fe2O4 is an indirect band gap material. A smaller electronic band gap was observed in O2 rich condition and was in agreement with the optical band gap and electrical conductivity test results. Seebeck coefficient of ZnxCu(1-x)Fe2O4 thin films sintered in oxygen remained positive , confirming charge transport by hole carries as p-type semiconductors. A change from p-type to n-type semiconductors was observed when ZnxCu(1-x)Fe2O4 thin films sintered in vacuum.

Transparent p- and n-Type Conductive Oxides With Delafossite Structure

2000 ◽  
Vol 623 ◽  
Author(s):  
Hiroshi Yanagi ◽  
Kazushige Ueda ◽  
Shuntaro Ibuki ◽  
Tomomi Hase ◽  
Hideo Hosono ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Delafossite Structure ◽  
P Type ◽  
Type Conduction

AbstractThin films of CuAlO2, CuGaO2 and AglnO2 with delafossite structure were prepared on sapphire substrates by pulsed laser deposition method. The resulting CuA102 thin films exhibited p-type conduction and the electrical conductivity at room temperature was 0.3 Scm−1. CuGaO2 thin films were grown epitaxially on μ-Al2O3 (001) surface and showed p-type conduction (conductivity at room temperature = 0.06 S cm−1). The optical band gap was estimated to be ∼3.5 eV for CuAlO2 or ∼3.6 eV for CuGaO2. On the other hand, the thin film of Sn doped AglnO2 exhibited n-type conduction. The optical band gap and electrical conductivity at room temperature were ∼4.1 eV and 70 S cm−1, respectively. The recent work demonstrates the validity of our chemical design concept for p- and n-type transparent conducting oxides, providing an opportunity for realization of transparent p-n junction using delafossite-type oxides.

scholarly journals Optoelectronics applications of electrodeposited p- and n-type Al2Se3 thin films

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
A. A. Faremi ◽  
S. S. Oluyamo ◽  
O. Olubosede ◽  
I. O. Olusola ◽  
M. A. Adekoya ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Energy Band ◽  
Selenium Dioxide ◽  
Photoelectrochemical Cells ◽  
Energy Band Gap ◽  
Cathodic Deposition ◽  
Conductivity Type ◽  
P Type

Abstract In this paper, energy band gaps and electrical conductivity based on aluminum selenide (Al2Se3) thin films are synthesized electrochemically using cathodic deposition technique, with graphite and carbon as cathode and anode, respectively. Synthesis is done at 353 K from an aqueous solution of analytical grade selenium dioxide (SeO2), and aluminum chloride (AlCl2·7H2O). Junctions-based Al2Se3 thin films from a controlled medium of pH 2.0 are deposited on fluorine-doped tin oxide (FTO) substrate using potential voltages varying from 1,000 mV to 1,400 mV and 3 minutes −15 minutes respectively. The films were characterized for optical properties and electrical conductivity using UV-vis and photoelectrochemical cells (PEC) spectroscopy. The PEC reveals a transition in the conduction of the films from p-type to n-type as the potential voltage varies. The energy band gap reduces from 3.2 eV to 2.9 eV with an increase in voltage and 3.3 eV to 2.7 eV with increase in time. These variations indicate successful fabrication of junction-based Al2Se3 thin films with noticeable transition in the conductivity type and energy band gap of the materials. Consequently, the fabricated Al2Se3 can find useful applications in optoelectronic devices.

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

Computational Analysis of Strain Effects on Electrical Transport Properties of Crystalline Nanocomposite Thin Films

2011 ◽  
Author(s):  
Hua Li ◽  
Gang Li
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electronic Band Structure ◽  
Electrical Transport Properties ◽  
Electronic Band ◽  
Strain Effects ◽  
Nanocomposite Thin Films

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.

Absorber Films of Antimony Chalcogenides via Chemical Deposition for Photovoltaic Application

2004 ◽  
Vol 836 ◽  
Author(s):  
M. T. S. Nair ◽  
Y. Rodríguez-Lazcano ◽  
Y. Peña ◽  
S. Messina ◽  
J. Campos ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Chemical Deposition ◽  
Dark Conductivity ◽  
Glass Substrates ◽  
Photovoltaic Application ◽  
Sodium Selenosulfate ◽  
P Type ◽  
Antimony Chalcogenides

ABSTRACTAntimony sulfide thin films (300 nm) have been deposited on glass substrates at 1–10°C from chemical bath. When heated these become crystalline and photoconductive with optical band gap (direct) of 1.7 eV. Thin films formed from chemical baths containing SbCl3 and sodium selenosulfate are of mixed phase Sb2O3/Sb2Se3, which when heated in the presence of Se-vapor converts to single phase Sb2Se3 film with optical band gap of 1.1 eV. Such films possess dark conductivity of 10-8 ohm-1cm-1 and show photosensitivity of two orders. Reaction of Sb2S3-CuS in nitrogen at 400°C produces crystalline, photoconductive p-type CuSbS2 with optical band gap (direct) of 1.5 eV. By controlling the deposition and heating condition, (i)Sb2S3-(p)CuSbS2 layer is formed, which is utilized in a photovoltaic structure, (n)CdS:In-(i)Sb2S3-(p)CuSbS2, with a Voc of 345 mV and Jsc 0.18 mA/cm2 under 1 kW m-2 tungsten halogen illumination. In the case of a structure, CdS:Cl-Sb2S3-Cu2-xSe, Voc of 350 mV and Jsc of 0.5 mA/cm2 are observed.

scholarly journals Semiconducting Thin Films of CuSbS2

Quimica Hoy ◽  
2011 ◽  
Vol 2 (1) ◽  
pp. 4
Author(s):  
Sarah Messina ◽  
Paz Hernández ◽  
Yolanda Peña
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Solid State ◽  
Optical Band Gap ◽  
Deposition Technique ◽  
X Ray ◽  
Absorber Material ◽  
Photovoltaic Applications ◽  
P Type ◽  
Semiconducting Thin Films

In this paper we present a method to produce polycrystalline CuSbS2 thin ?lms through a solid-state reaction at 350 ºC and 400 ºC involving thin ?lm multilayer of Sb2S3 -CuS or Cu2-xSe by chemical bath deposition technique. The formation of the ternary compound was confirmed by X-ray di?raction (XRD). A direct optical band gap of approx. 1.57 eV anda p-type electrical conductivity of 10-3 (Ω•cm)-1 were measured. These optoelectronic characteristics show perspective for the use of CuSbS, as a suitable absorber material in photovoltaic applications.

Tailoring of optical band gap and electrical conductivity in a-axis oriented Ni doped Chromium Oxide thin films

2018 ◽  
Vol 44 (10) ◽  
pp. 11187-11195 ◽  
Author(s):  
Saima Shaukat ◽  
M. Khaleeq-ur-Rahman ◽  
Usman Ilyas ◽  
Shahzad Naseem ◽  
I.M. Dildar ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
Chromium Oxide ◽  
Optical Band Gap ◽  
Oxide Thin Films

Cu2ZnSnSe4 from Chemically Deposited Binary Films

2014 ◽  
Vol 1670 ◽  
Author(s):  
Enue Barrios-Salgado ◽  
José Campos ◽  
M. T. S. Nair ◽  
P. K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Diffraction Pattern ◽  
Pattern Matching ◽  
Optical Band Gap ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sodium Selenosulfate ◽  
P Type

AbstractChemically deposited thin film stack of SnSe-ZnSe-Cu2-xSe was heated in nitrogen with Se vapor at 350-400 oC to produce Cu2ZnSnSe4 (CZTSe) thin films. For this, a thin film of SnSe with 180 nm thickness was deposited at 26 °C from a chemical bath containing tin(II) chloride, triethanolamine, sodium hydroxide, sodium selenosulfate, and a small quantity of polyvinylpyrrolidone. Thin films of ZnSe and Cu2-xSe were subsequently deposited on this SnSe film, also from chemical bath. The CZTSe thin film produced this way shows X-ray diffraction pattern matching that of Cu2ZnSnSe4 (kesterite/stannite) and have a Zn-rich composition. The film has an optical band gap of 0.9-1.0 eV and p-type electrical conductivity, 0.2-0.06 Ω-1 cm-1.

scholarly journals Fabrication of Cu4SnS4 Thin Films: Α Review

2020 ◽  
Vol 10 (5) ◽  
pp. 6161-6164
Author(s):  
S. M. Ho
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Gap ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ternary Compounds ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
P Type ◽  
Ionic Layer

Ternary compounds such as Cu4SnS4 thin films can be deposited onto glass substrates by various deposition methods: electrodeposition, chemical bath deposition, successive ionic layer adsorption and reaction, and evaporation techniques. Cu4SnS4 films could be used in solar cell applications because of their suitable band gap and large absorption coefficient. This paper reviews previous researches on Cu4SnS4 thin films. X-ray diffraction showed that the obtained films are orthorhombic in structure and polycrystalline in nature. Cu4SnS4 films exhibited p-type electrical conductivity and indicated band gap values in the range of 0.93 to 1.84eV.

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