Vanadium oxide thin films on quartz and Al6061 with reduced phase transition temperature and low solar absorptance for advanced thermal control application in space

2019 ◽  
Vol 45 (18) ◽  
pp. 25097-25107
Author(s):  
Dipta Mukherjee ◽  
Arjun Dey ◽  
Anoop Kumar Mukhopadhyay
2014 ◽  
Vol 496-500 ◽  
pp. 227-230
Author(s):  
Ya Qiao ◽  
Yuan Lu ◽  
Hua Yang ◽  
Yong Shun Ling

Vanadium oxide thin films were deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target and subsequent reduction annealing. The deposition and annealing parameters were given in detail. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The phase transition of the film was observed by measuring its resistance-temperature (R-T) characteristic curve. The results indicated that the film fabricated had a semiconductor-metal phase transition temperature of about 52°C, which is 16°C lower than the common phase transition temperature of vanadium dioxide film.


2015 ◽  
Vol 27 (5) ◽  
pp. 59001
Author(s):  
李宏哲 Li Hongzhe ◽  
盛传祥 Sheng Chuanxiang ◽  
厉申博 Li Shenbo ◽  
顾国华 Gu Guohua ◽  
任侃 Ren Kan ◽  
...  

2012 ◽  
Vol 61 (18) ◽  
pp. 188101
Author(s):  
Wu Bin ◽  
Hu Ming ◽  
Hou Shun-Bao ◽  
L Zhi-Jun ◽  
Gao Wang ◽  
...  

2019 ◽  
Vol 6 (5) ◽  
pp. 056415
Author(s):  
Dwight Acosta ◽  
G Chavez-Esquivel ◽  
Carlos Magaña ◽  
Francisco Hernández ◽  
A Pérez-Pacheco ◽  
...  

2012 ◽  
Vol 730-732 ◽  
pp. 251-256
Author(s):  
Carlos Batista ◽  
Ricardo M. Ribeiro ◽  
Vasco Teixeira

Vanadium oxide thin films were deposited by reactive ion beam sputtering deposition onto glass substrates. The films were prepared by sputtering from a metallic vanadium target with an argon+oxygen ion beam in vacuum. Different processing conditions were evaluated with focus in obtaining monoclinic VO2(M) phase, which is known to exhibit a semiconducting-metal phase transition near room temperature. X-ray diffractometry (XRD) analyses revealed amorphous films for temperatures below 500°C. In crystalline films, the co-existence of VO2(M) with other phases was suppressed by pre-depositing a very thin metallic vanadium seeding layer which showed to promote the formation of single phase VO2(M) films. The VO2(M) films showed clearly the distinctive optical modulation behavior at the near-infrared range when going through the phase transition. The temperature dependence of sheet resistance supports the optical analyses revealing an evident semiconducting-metal behavior change up to over 2 orders of magnitude.


2013 ◽  
Vol 690-693 ◽  
pp. 1694-1697
Author(s):  
Shuang Chen ◽  
Li Fang Zhang ◽  
Shu Juan Xiao ◽  
Cui Zhi Dong

W-doped Vanadium oxide thin films were prepared on the substrates of SiO2 glass, float glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure, morphology and phase transition were characterized by X-ray diffractometer, atomic force microscopy (AFM) and differential thermal analysis (DTA), respectively. The results show that, the major phase of W-doped films on SiO2 glass is VO2.Dopant reduce the phase transition temperature of VO2 thin films to 21.9°C. The root-mean-square roughness of the film increase for the longer deposition time.


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