Fabrication of Vanadium Oxide Film with Low Phase Transition Temperature by Magnetron Sputtering and Reduction Post-Anneal Method

2014 ◽  
Vol 496-500 ◽  
pp. 227-230
Author(s):  
Ya Qiao ◽  
Yuan Lu ◽  
Hua Yang ◽  
Yong Shun Ling
Keyword(s):  
Phase Transition ◽  
Transition Temperature ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Phase Transition Temperature ◽  
Characteristic Curve ◽  
Glass Substrates ◽  
Vanadium Metal ◽  
Vanadium Dioxide Film ◽  
Vanadium Oxide Thin Films

Vanadium oxide thin films were deposited on ordinary glass substrates by direct current (DC) magnetron sputtering from a vanadium metal target and subsequent reduction annealing. The deposition and annealing parameters were given in detail. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM). The phase transition of the film was observed by measuring its resistance-temperature (R-T) characteristic curve. The results indicated that the film fabricated had a semiconductor-metal phase transition temperature of about 52°C, which is 16°C lower than the common phase transition temperature of vanadium dioxide film.

The Fabrication of High Resistance-Temperature-Coefficient Vanadium Oxide Film by Magnetron Sputtering Method

2014 ◽  
Vol 609-610 ◽  
pp. 547-551
Author(s):  
Ya Qiao ◽  
Yong Shun Ling ◽  
Yuan Lu ◽  
Hua Yang
Keyword(s):  
Oxide Film ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Temperature Coefficient ◽  
Glass Substrates ◽  
Five Factors ◽  
Sputtering Power ◽  
Vanadium Metal ◽  
Four Levels ◽  
Vanadium Oxide Thin Films

Direct current (DC) magnetron sputtering method was used to deposit vanadium oxide thin films on ordinary glass substrates from a vanadium metal target and a five factors four levels orthogonal experimental method was used to find the best combination of sputtering pressure, sputtering power, oxygen/argon flow ratio, substrate temperature and deposition time for fabricating high temperature coefficient of resistance (TCR) vanadium oxide film. The results indicate that a good combination of these parameters should be 1Pa, 160W, 1.5/25, 280°C and 60 minutes. And the film fabricated using this parameters combination is mainly composed of V2O5and has a resistance range of 80.3kΩ to 40kΩ while its temperature changed from 20°C to 80°C.

Physical properties and phase transition observed in vanadium oxide thin films deposited by RF magnetron sputtering

2019 ◽  
Vol 6 (5) ◽  
pp. 056415
Author(s):  
Dwight Acosta ◽  
G Chavez-Esquivel ◽  
Carlos Magaña ◽  
Francisco Hernández ◽  
A Pérez-Pacheco ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Vanadium Oxide ◽  
Rf Magnetron Sputtering ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films

Characterization of polycrystalline VO2 thin film with low phase transition temperature fabricated by high power impulse magnetron sputtering

2016 ◽  
Vol 09 (02) ◽  
pp. 1650033 ◽  
Author(s):  
Tiegui Lin ◽  
Langping Wang ◽  
Xiaofeng Wang ◽  
Yufen Zhang
Keyword(s):  
Thin Film ◽  
Phase Transition ◽  
Transition Temperature ◽  
Magnetron Sputtering ◽  
Phase Transition Temperature ◽  
High Power ◽  
Photoelectron Spectroscopy ◽  
Lattice Distortion ◽  
Smart Windows ◽  
X Ray

VO2 is a unique material that undergoes a reversible phase transformation around 68[Formula: see text]C. Currently, applications of VO2 on smart windows are limited by its high transition temperature. In order to reduce the temperature, VO2 thin film was fabricated on quartz glass substrate by high power impulse magnetron sputtering with a modulated pulsed power. The phase transition temperature has been reduced to as low as 32[Formula: see text]C. In addition, the VO2 film possesses a typical metal–insulator transition. X-ray diffraction and selected area electron diffraction patterns reveal that an obvious lattice distortion has been formed in the as-deposited polycrystalline VO2 thin film. X-ray photoelectron spectroscopy proves that oxygen vacancies have been formed in the as-deposited thin film, which will induce a lattice distortion in the VO2 thin film.

Structure Characterization of W-Doped Vanadium Oxide Thin Films Prepared by Reactive Magnetron Sputtering

2013 ◽  
Vol 690-693 ◽  
pp. 1694-1697
Author(s):  
Shuang Chen ◽  
Li Fang Zhang ◽  
Shu Juan Xiao ◽  
Cui Zhi Dong
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Magnetron Sputtering ◽  
Vanadium Oxide ◽  
Reactive Magnetron Sputtering ◽  
Structure Characterization ◽  
Root Mean Square Roughness ◽  
Reactive Magnetron ◽  
Oxide Thin Films ◽  
Vanadium Oxide Thin Films

W-doped Vanadium oxide thin films were prepared on the substrates of SiO2 glass, float glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure, morphology and phase transition were characterized by X-ray diffractometer, atomic force microscopy (AFM) and differential thermal analysis (DTA), respectively. The results show that, the major phase of W-doped films on SiO2 glass is VO2.Dopant reduce the phase transition temperature of VO2 thin films to 21.9°C. The root-mean-square roughness of the film increase for the longer deposition time.

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