Theoretical prediction of topological insulators in two-dimensional ternary transition metal chalcogenides (MM'X4, M = Ta, Nb, or V; M’= Ir, Rh, or Co; X = Se or Te)

Author(s):  
Ali Sufyan ◽  
Gennevieve Macam ◽  
Chia-Hsiu Hsu ◽  
Zhi-Quan Huang ◽  
Shin-Ming Huang ◽  
...  
Author(s):  
Jiao Yu ◽  
Caijuan Xia ◽  
Zhengyang Hu ◽  
jianping Sun ◽  
Xiaopeng Hao ◽  
...  

With in-plane heterojunction contacts between semiconducting 2H phase (as channel) and the metallic 1T' phase (as electrode), the two-dimensional (2D) transition metal chalcogenides (TMDs) field-effect transistors (FETs) have received much...


ChemSusChem ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1114-1154 ◽  
Author(s):  
Yingxi Zhang ◽  
Liao Zhang ◽  
Tu'an Lv ◽  
Paul K. Chu ◽  
Kaifu Huo

Nanoscale ◽  
2021 ◽  
Author(s):  
Yunhee Cho ◽  
Thi Anh Le ◽  
Hyunjung Kim ◽  
Yeseul Hong ◽  
Heemin Hwang ◽  
...  

The steric effects of the ligands unveil the charged chalcogen sites which are induced by the ligand adsorption, thus promoting the anisotropic growth of two-dimensional transition metal chalcogenides (TMCs).


Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1675-1694 ◽  
Author(s):  
Yumei Jing ◽  
Baoze Liu ◽  
Xukun Zhu ◽  
Fangping Ouyang ◽  
Jian Sun ◽  
...  

AbstractDiffering from its bulk counterparts, atomically thin two-dimensional transition metal dichalcogenides that show strong interaction with light are considered as new candidates for optoelectronic devices. Either physical or chemical strategies can be utilized to effectively tune the intrinsic electronic structures for adopting optoelectronic applications. This review will focus on the different tuning strategies that include its physics principles, in situ experimental techniques, and its application of various optoelectronic devices.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Juan Yu ◽  
Xiaofei Kuang ◽  
Junzi Li ◽  
Jiahong Zhong ◽  
Cheng Zeng ◽  
...  

AbstractNonlinear optical effects in layered two-dimensional transition metal chalcogenides have been extensively explored recently because of the promising prospect of the nonlinear optical effects for various optoelectronic applications. However, these materials possess sizable bandgaps ranging from visible to ultraviolet region, so the investigation of narrow-bandgap materials remains deficient. Here, we report our comprehensive study on the nonlinear optical processes in palladium diselenide (PdSe2) that has a near-infrared bandgap. Interestingly, this material exhibits a unique thickness-dependent second harmonic generation feature, which is in contrast to other transition metal chalcogenides. Furthermore, the two-photon absorption coefficients of 1–3 layer PdSe2 (β ~ 4.16 × 105, 2.58 × 105, and 1.51 × 105 cm GW−1) are larger by two and three orders of magnitude than that of the conventional two-dimensional materials, and giant modulation depths (αs ~ 32%, 27%, and 24%) were obtained in 1–3 layer PdSe2. Such unique nonlinear optical characteristics make PdSe2 a potential candidate for technological innovations in nonlinear optoelectronic devices.


2018 ◽  
Vol 6 (17) ◽  
pp. 8021-8029 ◽  
Author(s):  
Wenzhou Chen ◽  
Yuanju Qu ◽  
Lingmin Yao ◽  
Xianhua Hou ◽  
Xingqiang Shi ◽  
...  

Two dimensional (2D) nanomaterials have received increasing interest because of their unique properties for versatile applications.


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