Surface characterization of mesoporous biomass activated carbon modified by thermal chemical vapor deposition and adsorptive mechanism of nitrate ions in aqueous solution

ABSTRACTPolySi films deposited with and without oxygen doping using rapid thermal chemical vapor deposition (RTCVD) have been investigated. Experimental results show that RTCVD systems can be used to provide high deposition rates ( 900-1000 Å/min at 700 °C) for both oxygen-doped and non-oxygen-doped polySi films. The surface roughness of the RTCVD polySi film is about half that of conventional LPCVD polySi films. The surface roughness and grain size of the RTCVD polySi film can be further reduced using oxygen doping. The catastrophic breakdown strength for capacitors using oxygen-doped polySi electrodes are improved compared with the breakdown strength for capacitors using non-oxygen-doped polySi electrodes. Electrical resistivities of B, P and As doped samples of polySi films with oxygen doping are found to be larger than those of polySi films without oxygen doping. Resistivities of silicides formed on the oxygen-doped polySi samples are approximately the same for those of silicides formed on non-oxygen-doped polySi samples.

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The Growth and Characterization of Silicon/Silicon Carbide Heteroepitaxial Films on Silicon Substrates by Rapid Thermal Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.35.3836 ◽

1996 ◽

Vol 35 (Part 1, No. 7) ◽

pp. 3836-3840 ◽

Cited By ~ 5

Author(s):

Kuen-Hsien Wu ◽

Yean-Kuen Fang ◽

Jen-Yeu Fang ◽

Jun-Dar Hwang

Keyword(s):

Silicon Carbide ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Substrates ◽

Thermal Chemical Vapor Deposition ◽

Silicon Silicon

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Effective preparation of nitrogen-doped activated carbon by aniline thermal chemical vapor deposition for arsenate adsorption

Environmental Engineering Research ◽

10.4491/eer.2019.217 ◽

2019 ◽

Vol 25 (5) ◽

pp. 707-713 ◽

Cited By ~ 1

Author(s):

Pyunghwa Yoo ◽

Yoshimasa Amano ◽

Motoi Machida

Keyword(s):

Heat Treatment ◽

Activated Carbon ◽

Chemical Vapor Deposition ◽

Adsorption Capacity ◽

Vapor Deposition ◽

Chemical Vapor ◽

Steam Activation ◽

Thermal Chemical Vapor Deposition ◽

Nitrogen Doped ◽

Arsenate Adsorption

Nitrogen-free phenol resin fiber was used to examine the effect of nitrogen-introduction via thermal chemical vapor deposition (CVD) using nitrogen-containing chemicals. In this study, a combination of heat treatment, steam activation, aniline CVD was conducted to prepare the nitrogen-doped activated carbon (AC) and the effective procedure was studied to enhance arsenic adsorption capacity. As a result, consecutive treatment of steam activation as pre-treatment, aniline CVD, steam activation for porous structure, and at least heat treatment was the best processing order for the preparation of ACs. Heat-treated samples demonstrated their robustness against steam activation; therefore heat treatment should be conducted as post treatment for effective CVD process. One of the samples which was prepared by this procedure, 8ST30-8ANL10-8ST50-9.5HT30 (sample #5) showed 0.112 mmol/g of arsenate adsorption capacity, and it was at least 70% higher than that of any other prepared samples. To inspect the high adsorption capacity of this sample, the effect of solution pH, pore structure parameters, elemental analysis, and Boehm titration was conducted comparing with the other prepared samples.

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