The Growth and Characterization of Silicon/Silicon Carbide Heteroepitaxial Films on Silicon Substrates by Rapid Thermal Chemical Vapor Deposition

1996 ◽  
Vol 35 (Part 1, No. 7) ◽  
pp. 3836-3840 ◽  
Author(s):  
Kuen-Hsien Wu ◽  
Yean-Kuen Fang ◽  
Jen-Yeu Fang ◽  
Jun-Dar Hwang
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Thermal Chemical Vapor Deposition ◽  
Silicon Silicon

Omcvd Elaboration and Characterization of Silicon Carbide and Carbon-Silicon Carbide Films from Organosilicon Compounds

1992 ◽  
Vol 271 ◽  
Author(s):  
R. Morancho ◽  
A. Reynes ◽  
M'b. Amjoud ◽  
R. Carles
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Thermal Behavior ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organosilicon Compounds ◽  
Carrier Gas

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.

Characterization of Fe-catalyzed carbon nanotubes grown by thermal chemical vapor deposition

2002 ◽  
Vol 244 (2) ◽  
pp. 211-217 ◽  
Author(s):  
Jong-Bong Park ◽  
Gyu-Seok Choi ◽  
Yu-Seok Cho ◽  
Sang-Young Hong ◽  
Dojin Kim ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

β-SiC Photodiodes Prepared on Silicon Substrates by Rapid Thermal Chemical Vapor Deposition

1997 ◽  
Vol 36 (Part 1, No. 8) ◽  
pp. 5151-5155 ◽  
Author(s):  
Kuen-Hsien Wu ◽  
Yean-Kuen Fang ◽  
Jing-Hong Zhou ◽  
Jyh-Jier Ho
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Thermal Chemical Vapor Deposition
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