scholarly journals Fabrication of a logic gate circuit based on ambipolar field-effect transistors with thin films of C60 and pentacene

2005 ◽  
Vol 413 (4-6) ◽  
pp. 379-383 ◽  
Author(s):  
Eiji Kuwahara ◽  
Haruka Kusai ◽  
Takayuki Nagano ◽  
Toshio Takayanagi ◽  
Yoshihiro Kubozono
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Gate ◽  
Gate Circuit

N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit

2003 ◽  
Vol 379 (3-4) ◽  
pp. 223-229 ◽  
Author(s):  
T. Kanbara ◽  
K. Shibata ◽  
S. Fujiki ◽  
Y. Kubozono ◽  
S. Kashino ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Gate ◽  
Gate Circuit

Influence of Electric Field on Microstructures of Pentacene Thin-Films in Field-Effect Transistors

2008 ◽  
Vol 18 (2) ◽  
pp. 285-293 ◽  
Author(s):  
H. L. Cheng ◽  
W. Y. Chou ◽  
C. W. Kuo ◽  
Y. W. Wang ◽  
Y. S. Mai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Field Effect ◽  
Field Effect Transistors

NAND And NOR Logic-In-Memory Comprising Silicon Nanowire Feedback Field-Effect Transistors

2021 ◽  
Author(s):  
Yejin Yang ◽  
Juhee Jeon ◽  
Jaemin Son ◽  
Kyoungah Cho ◽  
Sangsig Kim
Keyword(s):  
Processing Speed ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Logic Gate ◽  
High Energy ◽  
Zero Bias ◽  
Computing Systems ◽  
Data Movement

Abstract The processing of large amounts of data requires a high energy efficiency and fast processing time for high-performance computing systems. However, conventional von Neumann computing systems have performance limitations because of bottlenecks in data movement between separated processing and memory hierarchy, which causes latency and high power consumption. To overcome this hindrance, logic-in-memory (LIM) has been proposed that performs both data processing and memory operations. Here, we present a NAND and NOR LIM composed of silicon nanowidre feedback field-effect transistors, whose configuration resembles that of CMOS logic gate circuits. The LIM can perform memory operations to retain its output logic under zero-bias conditions as well as logic operations with a high processing speed of nanoseconds. The newly proposed dynamic voltage-transfer characteristics verify the operating principle of the LIM. This study demonstrates that the NAND and NOR LIM has promising potential to resolve power and processing speed issues.

Microstructure engineering of polymer semiconductor thin films for high-performance field-effect transistors using a bi-component processing solution

2017 ◽  
Vol 5 (14) ◽  
pp. 3568-3578 ◽  
Author(s):  
Dong Gao ◽  
Zhihui Chen ◽  
Jianyao Huang ◽  
Weifeng Zhang ◽  
Congyuan Wei ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Semiconductor Thin Films ◽  
Polymer Semiconductor ◽  
Processing Solution

The performance of polymer field-effect transistors was enhanced by microstructure engineering through the use of a bi-component solvent.

High-performance field-effect transistors based on gadolinium doped indium oxide nanofibers and their application in logic gate

2018 ◽  
Vol 112 (21) ◽  
pp. 213501 ◽  
Author(s):  
Chao Wang ◽  
You Meng ◽  
Zidong Guo ◽  
Byoungchul Shin ◽  
Guoxia Liu ◽  
...  
Keyword(s):  
Indium Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Logic Gate

Characterization of functionalized pentacene field-effect transistors and its logic gate application

2006 ◽  
Vol 100 (4) ◽  
pp. 044511 ◽  
Author(s):  
Jin Gyu Park ◽  
Relja Vasic ◽  
James S. Brooks ◽  
John E. Anthony
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Gate

Transport properties of field-effect transistors with thin films of C76 and its electronic structure

2007 ◽  
Vol 449 (1-3) ◽  
pp. 160-164 ◽  
Author(s):  
Hiroyuki Sugiyama ◽  
Takayuki Nagano ◽  
Ryo Nouchi ◽  
Naoko Kawasaki ◽  
Yohei Ohta ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors
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