Revisiting the structural pattern and the stability of (H2O)20 clusters using the dispersion corrected density functional method

2015 ◽  
Vol 626 ◽  
pp. 39-42 ◽  
Author(s):  
V. Shilpi ◽  
Surinder Pal Kaur ◽  
C.N. Ramachandran
2017 ◽  
Vol 5 (2) ◽  
pp. 91
Author(s):  
Zineb Tribak ◽  
Mohammed Skalli ◽  
Omar Senhaji ◽  
Youssef Kandri Rodi

This work deals about the synthesis, NMR characterization and the density functional method (B3LYP) with the 6-31G basis set of 1, 3-dipolar cycloaddition reactions between the two azides as dipoles and propargylchloroisatin as dipolarophile. Furthermore, DFT calculations were used to study the nucleophile–electrophile interactions of the azides and dipolarophile and also the stability between the regioisomers comparing their energy. Our calculations are in a good agreement with the experimental findings.


2010 ◽  
Vol 146-147 ◽  
pp. 966-971
Author(s):  
Qi Hua Jiang ◽  
Hai Dong Zhang ◽  
Bin Xiang ◽  
Hai Yun He ◽  
Ping Deng

This work studies the aggregation of an synthetic ultraviolet absorbent, named 2-hydroxy-4-perfluoroheptanoate-benzophenone (HPFHBP), in the interface between two solvents which can not completely dissolve each other. The aggregation is studied by computer simulations based on a dynamic density functional method and mean-field interactions, which are implemented in the MesoDyn module and Blend module of Material Studios. The simulation results show that the synthetic ultraviolet absorbent diffuse to the interface phase and the concentration in the interface phase is greater than it in the solvents phase.


2015 ◽  
Vol 242 ◽  
pp. 434-439 ◽  
Author(s):  
Vasilii E. Gusakov

Within the framework of the density functional theory, the method was developed to calculate the band gap of semiconductors. We have evaluated the band gap for a number of monoatomic and diatomic semiconductors (Sn, Ge, Si, SiC, GaN, C, BN, AlN). The method gives the band gap of almost experimental accuracy. An important point is the fact that the developed method can be used to calculate both localized states (energy deep levels of defects in crystal), and electronic properties of nanostructures.


2002 ◽  
Vol 65 (16) ◽  
Author(s):  
Mads Brandbyge ◽  
José-Luis Mozos ◽  
Pablo Ordejón ◽  
Jeremy Taylor ◽  
Kurt Stokbro

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