scholarly journals Fractional Dynamic of Two-Blocks Model for Earthquake Induced by Periodic Stress Perturbations

2021 ◽  
pp. 100064
Author(s):  
M.T. MOTCHONGOM ◽  
G.B. TANEKOU ◽  
FONZIN FOZIN ◽  
L.Y. KAGHO ◽  
R. KENGNE ◽  
...  
Keyword(s):  
Periodic Stress

Improved epitaxial texture of thick YBa2Cu3O7−δ/GdBa2Cu3O7−δfilms with periodic stress releasing

2015 ◽  
Vol 28 (4) ◽  
pp. 045001 ◽  
Author(s):  
Jianxin Lin ◽  
Wentao Yang ◽  
Zhaohui Gu ◽  
Gangqiang Shu ◽  
Minjuan Li ◽  
...  
Keyword(s):  
Periodic Stress

Observation of periodic stress produced by ion damage in thin films

1988 ◽  
Vol 58 (2) ◽  
pp. 397-408 ◽  
Author(s):  
M.-O. Ruault ◽  
M. Schack ◽  
H. Bernas ◽  
J.-P. Chevalier
Keyword(s):  
Thin Films ◽  
Ion Damage ◽  
Periodic Stress

On the nucleation of GaP/GaAs and the effect of buried stress fields

2005 ◽  
Vol 891 ◽  
Author(s):  
João Guilherme Zelcovit ◽  
José Roberto R. Bortoleto ◽  
Jefferson Bettini ◽  
Mônica Cotta
Keyword(s):  
Three Dimensional ◽  
High Energy ◽  
In Situ Monitoring ◽  
Chemical Beam Epitaxy ◽  
Contact Mode ◽  
Force Microscopy ◽  
Compositional Modulation ◽  
Atomic Force ◽  
Spatial Ordering ◽  
Periodic Stress

ABSTRACTWe have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the growth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflection High Energy Electron Diffraction (RHEED), on layers of unstressed and stressed GaAs. Complementary, we have studied the role of a buried InP dot array on GaP nucleation in order to obtain three-dimensional structures. In both cases, the topographical characteristics of the samples were investigated by Atomic Force Microscopy (AFM) in non-contact mode. Thus vertically-coupled quantum dots of different materials have been obtained keeping the in-place spatial ordering originated from the composition modulation.

scholarly journals A Blast-Resistant Method Based on Wave Converters with Spring Oscillator for Underground Structures

2017 ◽  
Vol 2017 ◽  
pp. 1-13
Author(s):  
Yu Zhang ◽  
Yuanxue Liu ◽  
Runze Wu ◽  
Jichang Zhao ◽  
Ming Hu ◽  
...  
Keyword(s):  
High Frequency ◽  
Mechanical Characteristics ◽  
Peak Pressure ◽  
Low Frequency ◽  
Bending Moment ◽  
Dynamic Responses ◽  
Shopping Malls ◽  
Underground Structures ◽  
Periodic Stress ◽  
Resistant Structure

Researches on blast-resistant measures for underground structures such as tunnels and underground shopping malls are of great importance for their significant role in economic and social development. In this paper, a new blast-resistant method based on wave converters with spring oscillator for underground structures was put forward, so as to convert the shock wave with high frequency and high peak pressure to the periodic stress wave with low frequency and low peak pressure. The conception and calculation process of this new method were introduced. The mechanical characteristics and motion evolution law of wave converters were deduced theoretically. Based on the theoretical deduction results and finite difference software FLAC3D, the dynamic responses of the new blast-resistant structure and the traditional one were both calculated. Results showed that, after the deployment of wave converters, the peak absolute values of the bending moment, shear force, and axial force of the structure decreased generally, which verified the good blast-resistant effect of the new blast-resistant method.

scholarly journals Quantum-dot growth simulation on periodic stress of substrate

2005 ◽  
Vol 123 (9) ◽  
pp. 094708 ◽  
Author(s):  
Chang Zhao ◽  
Y. H. Chen ◽  
C. X. Cui ◽  
B. Xu ◽  
J. Sun ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Growth Simulation ◽  
Periodic Stress

scholarly journals Bacterial surface colonization, preferential attachment and fitness under periodic stress

2019 ◽  
Vol 15 (3) ◽  
pp. e1006815 ◽  
Author(s):  
Maor Grinberg ◽  
Tomer Orevi ◽  
Nadav Kashtan
Keyword(s):  
Preferential Attachment ◽  
Surface Colonization ◽  
Bacterial Surface ◽  
Periodic Stress

Mechanical Stress Monitoring Sensor for 3-D Module During Manufacturing and Operation

2017 ◽  
Author(s):  
Koki Isobe ◽  
Ken Suzuki ◽  
Hideo Miura
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Crystalline Silicon ◽  
Three Dimensional ◽  
Stress Monitoring ◽  
Impact Stress ◽  
Total Structure ◽  
Periodic Stress ◽  
The Impact ◽  
Packaging Module

In three-dimensional packaging module which have been used in electronic equipment, the size of partial interconnections and total structure have been continuously miniaturized for improving the performance of the products. Due to the fluctuation of the mechanical properties of the component materials and the drop impact towards the fragile modules during manufacturing and operation, the final residual stress varies easily in a chip of the 3-D structure. Both the static and dynamic changes of the stress distribution induce the variation of the performance of electronic devices and the degradation of their long-term reliability. It is, therefore, important to control and optimize the residual stress quantitatively. In this study, a stress sensor which can monitor the change of the local residual stress in 3-D module was developed by applying the piezoresistance effect of single-crystalline silicon. The sensor was embedded in a silicon chip, and it can measure the periodic stress in a silicon chip assembled by area-arrayed bump structure. The impact stress during the manufacturing process was successfully monitored by using this sensor. It was also confirmed that the effective amplitude of the impact stress varies drastically depending on the mechanical properties of the stacked thin films.

Measurement of Local Residual Stress of a Flip Chip Structure Using a Stress Sensing Chip

2005 ◽  
Author(s):  
Nobuki Ueta ◽  
Hideo Miura
Keyword(s):  
Residual Stress ◽  
Polycrystalline Silicon ◽  
Flip Chip ◽  
Sensor Chip ◽  
Element Analysis ◽  
Strong Function ◽  
Chip Technology ◽  
Stress Sensing ◽  
Periodic Stress ◽  
Polycrystalline Silicon Films

Local residual stress at a surface of a silicon chip mounted on a substrate using flip chip technology was measured using a stress sensor chip that was composed of 168 strain gauges of 10-μm in length. Each strain gauge was made of polycrystalline silicon films deposited on a silicon wafer. The periodic stress distribution was measured at a surface of the sensor chip between two bumps. Five gauges were aligned at a interval of 20-μm between the bumps. When the thickness of the chip was less than 200 μm, the amplitude of the stress increased drastically, as was predicted by a finite element analysis. The amplitude of the stress reached about 150 MPa, when the thickness of the chip was thinned to 50 μm. The amplitude of the stress is a strong function of the thickness of a silicon chip and the intervals of the bumps.

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