scholarly journals CVD synthesis of multi-layered polycrystalline diamond films with reduced roughness using time-limited injections of N2 gas

2021 ◽  
Vol 114 ◽  
pp. 108333
Author(s):  
Vadim Sedov ◽  
Artem Martyanov ◽  
Sergei Savin ◽  
Evgeniy Zavedeev ◽  
Oleg Kudryavtsev ◽  
...  
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).


CIRP Annals ◽  
1990 ◽  
Vol 39 (1) ◽  
pp. 585-588 ◽  
Author(s):  
R. Komanduri ◽  
L.L. Fehrenbacher ◽  
L.M. Hanssen ◽  
A. Morrish ◽  
K.A. Snail ◽  
...  

1994 ◽  
Vol 3 (4-6) ◽  
pp. 663-671 ◽  
Author(s):  
J. Ullmann ◽  
A. Weber ◽  
B. Mainz ◽  
J. Stiegler ◽  
T. Schuhrke

2007 ◽  
Vol 24-25 ◽  
pp. 377-382
Author(s):  
Rong Fa Chen ◽  
Dun Wen Zuo ◽  
Yu Li Sun ◽  
Wen Zhuang Lu ◽  
D.S. Li ◽  
...  

Although research on various diamond polishing techniques has been carried for years, some issues still need to be examined in order to facilitate application on large areas in a cost-efficient manner. A compositive technique for machining efficiently thick diamond films prepared by DC plasma arc jet is reported in the present paper. A two-stage polishing was applied on thick polycrystalline diamond films, by employing first electro-discharge machining (EDM) for rough polishing and subsequently mechanical polishing for finishing operations. Experimental results obtained clearly indicate the applicability of the proposed two-stage technique for fabricating transparent diamond films that can be used for the production of X-ray windows. Appropriate etching with EDM is an effective pretreatment method for enhancing the efficiency of rough polishing process in mechanical polishing of thick diamond film. The machined surfaces of diamond films are studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman).


1992 ◽  
Vol 275 ◽  
Author(s):  
G. Cui ◽  
C. P. Beetz ◽  
B. A. Lincoln ◽  
P. S. Kirlin

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.


2015 ◽  
Vol 212 (11) ◽  
pp. 2583-2588 ◽  
Author(s):  
S. Elfimchev ◽  
M. Chandran ◽  
R. Akhvlediani ◽  
A. Hoffman

Author(s):  
V V Okhotnikov ◽  
S A Linnik ◽  
A V Gaidaichuk ◽  
D V Shashev ◽  
G Yu Nazarova ◽  
...  

1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.


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