scholarly journals Energy Storage Characteristics of MJ-Class Toroidal HTS-SMES Considering Maximum Value of Perpendicular Magnetic Field

2017 ◽  
Vol 105 ◽  
pp. 4179-4184 ◽  
Author(s):  
Ming Qiu ◽  
Shuangquan Rao ◽  
Jiahui Zhu ◽  
Shanshan Fu ◽  
Zhenming Li ◽  
...  
2021 ◽  
Author(s):  
Yuzhe Chen ◽  
Hongwei Chen ◽  
Libin Gao ◽  
Kexin Liang ◽  
Zhiqiang Wang ◽  
...  

Abstract The effect of (1-x)(Pb0.97La0.02)(Zr0.675Sn0.285Ti0.04)O3-xAl2O3, with x=0~0.04, 0.08, 0.10 composite ceramic samples was studied. In this experiment, the PLZST powder was pre-fired to obtain the perovskite structure, and then combined with α-Al2O3 to increase the BDS of the ceramic. The test results show that the composite thick film samples are all perovskite orthorhombic phases, and Al2O3 is mainly filled in the grain gaps with a flaky structure. A proper content of composite Al2O3 can increase the density of ceramics. With x=0.02, the maximum value of BDS is 25.27 kV/mm, which is 60% higher than pure PLZST material, and the releasable energy storage density also reaches a maximum of 2.95 J/cm³. After the composite amount exceeds 0.03, the saturation polarization intensity decreases significantly. The energy storage efficiency of each sample is generally not high, all of which are less than 65%.


RSC Advances ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 4035-4041
Author(s):  
Yi Wan ◽  
Xing Cheng ◽  
Yanfang Li ◽  
Yaqian Wang ◽  
Yongping Du ◽  
...  

Herein, we demonstrated that a perpendicular magnetic field could produce a dramatic scattering rotation for the vibrations in MoS2 monolayers.


2021 ◽  
Vol 7 (3) ◽  
pp. 38
Author(s):  
Roshni Yadav ◽  
Chun-Hsien Wu ◽  
I-Fen Huang ◽  
Xu Li ◽  
Te-Ho Wu ◽  
...  

In this study, [Co/Ni]2/PtMn thin films with different PtMn thicknesses (2.7 to 32.4 nm) were prepared on Si/SiO2 substrates. The post-deposition perpendicular magnetic field annealing (MFA) processes were carried out to modify the structures and magnetic properties. The MFA process also induced strong interlayer diffusion, rendering a less sharp interface between Co and Ni and PtMn layers. The transmission electron microscopy (TEM) lattice image analysis has shown that the films consisted of face-centered tetragonal (fct) PtMn (ordered by MFA), body-centered cubic (bcc) NiMn (due to intermixing), in addition to face-centered cubic (fcc) Co, Ni, and PtMn phases. The peak shift (2-theta from 39.9° to 40.3°) in X-ray diffraction spectra also confirmed the structural transition from fcc PtMn to fct PtMn after MFA, in agreement with those obtained by lattice images in TEM. The interdiffusion induced by MFA was also evidenced by the depth profile of X-ray photoelectron spectroscopy (XPS). Further, the magnetic properties measured by vibrating sample magnetometry (VSM) have shown an increased coercivity in MFA-treated samples. This is attributed to the presence of ordered fct PtMn, and NiMn phases exchange coupled to the ferromagnetic [Co/Ni]2 layers. The vertical shift (Mshift = −0.03 memu) of the hysteresis loops is ascribed to the pinned spins resulting from perpendicular MFA processes.


2019 ◽  
Vol 126 (24) ◽  
pp. 243904 ◽  
Author(s):  
Yanchao Liu ◽  
Zhenan Jiang ◽  
G. Sidorov ◽  
C. W. Bumby ◽  
R. A. Badcock ◽  
...  

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2647-2654 ◽  
Author(s):  
C. STAMPFER ◽  
E. SCHURTENBERGER ◽  
F. MOLITOR ◽  
J. GÜTTINGER ◽  
T. IHN ◽  
...  

We report on electronic transport experiments on a graphene single electron transistor as function of a perpendicular magnetic field. The device, which consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions is electronically characterized and the device exhibits a characteristic charging energy of approx. 3.5 meV. We investigate the homogeneity of the two graphene "tunnel" barriers connecting the single electron transistor to source and drain contacts as function of laterally applied electric fields, which are also used to electrostatically tune the overall device. Further, we focus on the barrier transparency as function of an applied perpendicular magnetic field and we find an increase of transparency for increasing magnetic field and a source-drain current saturation for magnetic fields exceeding 5 T.


Energy ◽  
2014 ◽  
Vol 78 ◽  
pp. 212-217 ◽  
Author(s):  
X.J. Wang ◽  
X.F. Li ◽  
Y.H. Xu ◽  
D.S. Zhu

2006 ◽  
Vol 512 ◽  
pp. 195-200 ◽  
Author(s):  
Nariaki Okamoto ◽  
Takashi Fukuda ◽  
Tomoyuki Kakeshita ◽  
Tetsuya Takeuchi

Ni2MnGa alloy with 10M martensite exhibits rearrangement of martensite variants (RMV) by magnetic field, but Ni2.14Mn0.92Ga0.94 with 2M martensite does not. In order to explain the difference, we measured uniaxial magnetocrystalline anisotropy constant Ku and the stress required for twinning plane movement τreq in these alloys. Concerning the former alloy, the maximum value of magnetic shear stress acting across twinning plane τmag, which is evaluated as |Ku| divided by twinning shear, becomes larger than τr eq. On the other hand, concerning the latter alloy, the maximum of τmag is only one-tenth of τreq at any temperature examined. Obviously, the relation, τmag> τr eq, is satisfied when RMV occurs by magnetic field and vice versa. In this martensite, the large twinning shear of 2M martensite is responsible for small τmag and large τreq.


2017 ◽  
Vol 30 (3) ◽  
pp. 035301 ◽  
Author(s):  
Dušan Z Jakovljević ◽  
Marko M Grujić ◽  
Milan Ž Tadić ◽  
François M Peeters

2008 ◽  
Vol 22 (12) ◽  
pp. 1923-1932
Author(s):  
JIA LIU ◽  
ZI-YU CHEN

The influence of a perpendicular magnetic field on a bound polaron near the interface of a polar–polar semiconductor with Rashba effect has been investigated. The material is based on a GaAs / Al x Ga 1-x As heterojunction and the Al concentration varying from 0.2 ≤ x ≤ 0.4 is the critical value below which the Al x Ga 1-x As is a direct band gap semiconductor.The external magnetic field strongly altered the ground state binding energy of the polaron and the Rashba spin–orbit (SO) interaction originating from the inversion asymmetry in the heterostructure splitting of the ground state binding energy of the bound polaron. How the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity and the electron area density have been shown in this paper, taking into account the SO coupling. The contribution of the phonons are also considered. It is found that the spin-splitting states of the bound polaron are more stable, and, in the condition of weak magnetic field, the Zeeman effect can be neglected.


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