scholarly journals Effects of Perpendicular Magnetic Field Annealing on the Structural and Magnetic Properties of [Co/Ni]2/PtMn Thin Films

2021 ◽  
Vol 7 (3) ◽  
pp. 38
Author(s):  
Roshni Yadav ◽  
Chun-Hsien Wu ◽  
I-Fen Huang ◽  
Xu Li ◽  
Te-Ho Wu ◽  
...  

In this study, [Co/Ni]2/PtMn thin films with different PtMn thicknesses (2.7 to 32.4 nm) were prepared on Si/SiO2 substrates. The post-deposition perpendicular magnetic field annealing (MFA) processes were carried out to modify the structures and magnetic properties. The MFA process also induced strong interlayer diffusion, rendering a less sharp interface between Co and Ni and PtMn layers. The transmission electron microscopy (TEM) lattice image analysis has shown that the films consisted of face-centered tetragonal (fct) PtMn (ordered by MFA), body-centered cubic (bcc) NiMn (due to intermixing), in addition to face-centered cubic (fcc) Co, Ni, and PtMn phases. The peak shift (2-theta from 39.9° to 40.3°) in X-ray diffraction spectra also confirmed the structural transition from fcc PtMn to fct PtMn after MFA, in agreement with those obtained by lattice images in TEM. The interdiffusion induced by MFA was also evidenced by the depth profile of X-ray photoelectron spectroscopy (XPS). Further, the magnetic properties measured by vibrating sample magnetometry (VSM) have shown an increased coercivity in MFA-treated samples. This is attributed to the presence of ordered fct PtMn, and NiMn phases exchange coupled to the ferromagnetic [Co/Ni]2 layers. The vertical shift (Mshift = −0.03 memu) of the hysteresis loops is ascribed to the pinned spins resulting from perpendicular MFA processes.

2009 ◽  
Vol 24 (11) ◽  
pp. 3321-3330 ◽  
Author(s):  
Y.F. Han ◽  
T. Fu ◽  
Y.G. Shen

The effects of Al incorporation and post-deposition annealing on the structural properties of C-Al-N thin films prepared by reactive unbalanced dc-magnetron sputtering were investigated using x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). XPS studies demonstrated the presence of abundant Al-N bonds in addition to C-C and N-C bonds. At low incorporations of Al and N, the films were found to be essentially amorphous. By Raman and HRTEM, the formation of ∼5 nm fullerene-like carbon nitride (FL-CNx) nanostructures in an amorphous (C, CNx) matrix was evidenced with increasing Al content in the films. Crystalline improvement of FL-CNx nanostructures was seen, as well as the precipitation of ∼3–4 nm face centered cubic (fcc-) AlN nanograins by thermal annealing at 500 °C or above. Through these improvements, C-Al-N nanocomposite thin films were achieved. The effects of the incorporated Al and annealing on stabilizing fcc-AlN nanograins and FL-CNx nanostructures are elucidated and explained through the use of thermodynamic considerations.


2015 ◽  
Vol 799-800 ◽  
pp. 120-124 ◽  
Author(s):  
Mary Donnabelle L. Balela ◽  
Lalaine M. Dulin ◽  
Erica A. Garcia ◽  
M. Janelle H. Tica

Cobalt-nickel (Co-Ni) nanowires were formed by electroless deposition in ethylene glycol under external magnetic field. The effects of initial Co (II) and Ni (II) concentration on the surface and morphology of the synthesized nanowires were investigated by x-ray diffraction (XRD) and scanning electron microscope (SEM) respectively. An increase in the Co (II) concentration resulted in increase in diameter of the nanowires. However, the length of nanowires was observed to decrease. Higher Co (II) concentration resulted in a mixture of hexagonal close-packed and face-centered cubic Co-Ni nanowires. X-ray diffraction revealed that crystal growth occurred when the nanowires are annealed at 653 K for 10h.


1999 ◽  
Vol 562 ◽  
Author(s):  
Heng Gong ◽  
Wei Yang ◽  
Maithri Rao ◽  
David E. Laughlin ◽  
David N. Lambeth

ABSTRACTThin Co and Co based alloy films with the face centered cubic (FCC) structure have been epitaxially grown on single crystal Si wafers by sputter deposition. Epitaxial orientation relationships have been determined by x-ray diffraction, x-ray pole figure scans and TEM. Magnetic properties have been characterized using vibrating sampling magnetometer (VSM), torque magnetometer and BH loop tracer. Soft magnetic properties have been observed for the pure Co films.


2004 ◽  
Vol 19 (4) ◽  
pp. 352-355 ◽  
Author(s):  
Wei Tao Zheng ◽  
Xin Wang ◽  
Xianggui Kong ◽  
Hongwei Tian ◽  
Shansheng Yu ◽  
...  

Fe–N thin films were deposited on glass substrates by dc magnetron sputtering under various Ar∕N2 discharge conditions. Crystal structures and elemental compositions of the films were characterized by X-ray diffraction and X-ray photoelectron spectroscopy. Magnetic properties of the films were measured using a superconducting quantum interference device magnetometer. Films deposited at different N2∕(Ar+N2) flow ratios were found to have different crystal structures and different nitrogen contents. When the flow ratios were 60%, 50%, and 30%, a nonmagnetic single-phase FeN was formed in the films. At the flow ratio of 10%, two crystal phases of γ′-Fe4N and ε-Fe3N were detected. When the flow ratio reduced to 5%, a mixture of α-Fe, ε-Fe3N, FeN0.056, and α″-Fe16N2 phases was obtained. The value of saturation magnetization for the mixture was found to be larger than that of pure Fe.


Open Physics ◽  
2011 ◽  
Vol 9 (2) ◽  
Author(s):  
Karol Załęski ◽  
Janusz Dubowik ◽  
Iwona Gościańska ◽  
Bartłomiej Andrzejewski ◽  
Tomasz Toliński

AbstractIn this paper we report structural, magnetic and transport properties of strongly textured Ni51Mn36Sn13 thin films. The off-stoichiometric Heusler alloy films with 200 nm thickness were sputter-deposited on a MgO(100) substrate at 500 K and after annealed at 1000 K in UHV conditions. The textured growth was confirmed by x-ray diffraction in Bragg-Brentano geometry. The temperature dependence of the magnetic properties was measured by VSM and FMR methods. The electron transport measurements were carried out in function of temperature in 0 Oe and 50 kOe fields. All measurements corroborate the existence of the martensitic transformation in the film. Furthermore, transport measurements reveal an influence of the magnetic field on the transition temperature.


2009 ◽  
Vol 79-82 ◽  
pp. 635-638 ◽  
Author(s):  
Xin Wang ◽  
Hui Jia ◽  
Wei Tao Zheng ◽  
Wei Xu ◽  
Bei Hong Long

Fe-Co-N thin films with various Co content were synthesized on Si (111) substrate using facing-target magnetron sputtering by changing sputtering input power on Co target. During deposition, the input power on Fe target was kept at 160 W. The composition, structure, and magnetic properties were examined by X-ray photoelectron spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), and superconducting quantum interference device. XRD and TEM investigations showed that at lower input power of 11.2 W on Co target, the phases in the film were -(Fe,Co)4N and Co3N. Increasing sputtering input power, the content of Co in the film increased. At input power of 14 W, film contained -(Fe,Co)8N phase was produced which exhibited higher saturation magnetization (252.85 Am2/kg) and lower value of coercivity (3.66 kAm-1), corresponded to the 12% content of Co in the film.


2015 ◽  
Vol 2015 ◽  
pp. 1-5
Author(s):  
Yuan-Tsung Chen

To study the structural, thermal, electrical, optical, and adhesive properties of magnetic FePdB thin films, 25–200-Å-thick Fe40Pd40B20and Fe60Pd20B20films were deposited on a glass substrate by direct current (DC) magnetron sputtering at room temperature (RT). X-ray diffraction (XRD) patterns indicated that the 25–75-Å-thick Fe40Pd40B20and Fe60Pd20B20films were amorphous, whereas the 100–200-Å-thick Fe40Pd40B20and Fe60Pd20B20films were crystalline, with a face-centered cubic (FCC) FePd (111) textured structure. The activation energy of the Fe40Pd40B20and Fe60Pd20B20thin films decreased as thickness was increased. The 25-Å-thick Fe40Pd40B20film exhibited the highest resistivity, whereas the 200-Å-thick Fe60Pd20B20film exhibited the lowest resistivity. Increasing the thickness and crystallization reduced transmission. The Fe40Pd40B20thin films exhibited higher surface energy and stronger adhesion than did Fe60Pd20B20thin films.


Coatings ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 338
Author(s):  
Anna Zaman ◽  
Yi Shen ◽  
Efstathios I. Meletis

Tantalum silicon nitride (Ta–Si–N) films were synthesized on Si substrate via magnetron sputtering. The structure and properties of the Ta–Si–N films were investigated as a function of the N2 content in the N2/Ar gas mixture. Increasing the N2 percentage in the gas mixture from 7% to 20% changed the film structure from textured hexagonal (hex) Ta2N to nontextured hex Ta2N to a mixture of face-centered cubic (fcc) TaN and hex Ta2N, and finally to fcc TaN. X-ray photoelectron spectroscopy showed Ta–N and Si–N bonds in the films. The film microstructure was found to change from columnar morphology with visible amorphous boundaries (at 13% N2) to columnar morphology with absence of amorphous boundaries (at 15% N2). Increasing N2 content increased hardness in the films with those deposited with 13–15% N2 displaying the highest hardness of ~40 ± 2 GPa. In addition, the 13% N2 films showed a ratio of H/E* > 0.11, elastic recovery of ~60%, low coefficient of friction of 0.6, reduced wear rate (7.09 × 10−6 mm3/N·m), and remained thermally stable up to 800 °C. The results suggest that the Ta–Si–N films have high potential as hard tribological nanocomposite coatings.


2001 ◽  
Vol 16 (7) ◽  
pp. 1887-1889 ◽  
Author(s):  
Lamartine Meda ◽  
LaQuita Kennon ◽  
Cristiane Bacaltchuk ◽  
Hamid Garmestani ◽  
Klaus H. Dahmen

Thin films of La0.67Sr0.33MnO3 (LSMO) were prepared at 670 °C on LaAlO3 (LAO) and SrTiO3 (STO) substrates by liquid-delivery metalorganic chemical vapor deposition. X-ray diffraction analysis 2¸/¸ and pole figure scans showed that the films are epitaxial with (001)LSMO//(001)LAO and (001)LSMO//(001)STO. The crystal structure of LSMO/LAO was indexed as face-centered cubic with a double cell and LSMO/STO as simple cubic. Electron microscopy revealed square facets and elongated grain features. Films heat-treated between 700 and 800 °C on LAO resulted in a structural change, while those on STO showed an increase in texture.


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