A novel MEMS stage for in-situ thermomechanical testing of single crystal silicon microbeams under bending

2018 ◽  
Vol 23 ◽  
pp. 1-8 ◽  
Author(s):  
Mohamed Elhebeary ◽  
M. Taher A. Saif
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Thermomechanical Testing

T0302-2-6 In-situ TEM Experiment of Tensile Testing for Single-Crystal-Silicon Thin Film

2010 ◽  
Vol 2010.8 (0) ◽  
pp. 263-264
Author(s):  
Taeko ANDO ◽  
Hidekazu Ishihara ◽  
Masahiro Nakajima ◽  
Shigeo Arai ◽  
Toshio Fukuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Tensile Testing ◽  
Single Crystal Silicon ◽  
In Situ Tem ◽  
Silicon Thin Film ◽  
Crystal Silicon

Preparation of Thin Single Crystal Silicon Substrates for in situ Electron Microscope Studies

1973 ◽  
Vol 31 ◽  
pp. 120-121
Author(s):  
J. S. Maa ◽  
J. I. Lee ◽  
Thos. E. Hutchinson
Keyword(s):  
Electron Microscope ◽  
Single Crystal ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Micro Milling ◽  
Crystal Silicon ◽  
Etching Technique

The in-situ electron microscope technique has been shown to be a powerful method for understanding the nucleation and growth of thin films formed both by vacuum vapor deposition and ion beam sputter-deposition. Single crystal silicon which has only been chosen as substrate for thin film deposition outside the electron microscope has now been prepared in a form suitable for in-situ deposition.The method of the preparation of thin silicon substrate is a combination of jet chemical etching and modified ion beam thinning. A specimen of thickness roughly 0.010 inch is first etched from both sides by the jet etching technique. After jet etching, it is transferred to the Commonwealth Scientific ion micro-milling instrument and bombarded from both sides with Argon ion beam. A pin hole occurs in the center of the specimen after about 30 minutes of ion bombardment.

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