In situ characterization of formation and growth of high-pressure phases in single-crystal silicon during nanoindentation

2016 ◽  
Vol 122 (4) ◽  
Author(s):  
Hu Huang ◽  
Jiwang Yan
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
In Situ Characterization ◽  
Crystal Silicon

Basic Characteristics of a Simultaneous Double-Side CMP Machine, Housed in a Sealed, Pressure-Resistant Container

2010 ◽  
Vol 447-448 ◽  
pp. 61-65 ◽  
Author(s):  
Kei Kitamura ◽  
Toshiro K. Doi ◽  
Syuhei Kurokawa ◽  
Yoji Umezaki ◽  
Yoji Matsukawa ◽  
...  
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Effective Action ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Pressure Oxygen ◽  
Gas Atmosphere ◽  
High Pressure Oxygen ◽  
Oxygen Gas ◽  
Basic Characteristics

We designed and manufactured a prototype of a unique CMP machine, which can perform double-side CMP simultaneously in a sealed and pressure container as regarding effective action of the processing atmosphere around workpieces as important. Polishing experiments with single crystal silicon (Si) wafers (100) are performed by charging the container with various gases. As a result, the removal rates increased by up to 25% under high pressure oxygen gas atmosphere.

In situ characterization of the functional degradation of a [001¯] oriented Fe-Mn-Al-Ni single crystal under compression using acoustic emission measurements

2021 ◽  
pp. 117333
Author(s):  
Anja Weidner ◽  
Alexei Vinogradov ◽  
Malte Vollmer ◽  
Phillip Krooß ◽  
Mario J. Kriegel ◽  
...  
Keyword(s):  
Acoustic Emission ◽  
Single Crystal ◽  
In Situ Characterization

Nanoindentation Characterization of Single-Crystal Silicon With Oxide Film

2021 ◽  
Author(s):  
Lianmin Yin ◽  
Yifan Dai ◽  
Hao Hu
Keyword(s):  
Mechanical Properties ◽  
Plastic Deformation ◽  
Oxide Film ◽  
Single Crystal ◽  
Deformation Zone ◽  
Single Crystal Silicon ◽  
Plastic Deformation Zone ◽  
Crystal Silicon ◽  
Ultra Precision

Abstract In order to obtain ultra-smooth surfaces of single-crystal silicon in ultra-precision machining, an accurate study of the deformation mechanism, mechanical properties, and the effect of oxide film under load is required. The mechanical properties of single-crystal silicon and the phase transition after nanoindentation experiments are investigated by nanoindentation and Raman spectroscopy, respectively. It is found that pop-in events appear in the theoretical elastic domain of single-crystal silicon due to the presence of oxide films, which directly leads the single crystal silicon from the elastic deformation zone into the plastic deformation zone. In addition, the mechanical properties of single-crystal silicon are more accurately measured after it has entered the full plastic deformation.

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