Two-dimensional porous cobalt–nickel tungstate thin sheets for high performance supercapattery

2020 ◽  
Vol 32 ◽  
pp. 105-114 ◽  
Author(s):  
Biao Huang ◽  
Huayu Wang ◽  
Shunfei Liang ◽  
Huizhen Qin ◽  
Yang Li ◽  
...  
CrystEngComm ◽  
2020 ◽  
Vol 22 (18) ◽  
pp. 3242-3242
Author(s):  
Chenglan Zhao ◽  
Yuqian Jiang ◽  
Shunfei Liang ◽  
Fang Gao ◽  
Li Xie ◽  
...  

Correction for ‘Two-dimensional porous nickel oxalate thin sheets constructed by ultrathin nanosheets as electrode materials for high-performance aqueous supercapacitors’ by Chenglan Zhao et al., CrystEngComm, 2020, DOI: 10.1039/d0ce00268b.


2016 ◽  
Vol 22 (50) ◽  
pp. 18060-18065 ◽  
Author(s):  
Dan Zhang ◽  
Wenping Sun ◽  
Zhihui Chen ◽  
Yu Zhang ◽  
Wenbin Luo ◽  
...  

CrystEngComm ◽  
2020 ◽  
Vol 22 (17) ◽  
pp. 2953-2963 ◽  
Author(s):  
Chenglan Zhao ◽  
Yuqian Jiang ◽  
Shunfei Liang ◽  
Fang Gao ◽  
Li Xie ◽  
...  

2D porous nickel oxalate thin sheets constructed by ultrathin nanosheets were first synthesized by using a simple hydrothermal method. The resulting porous thin sheets exhibited superior supercapacitor performance.


2017 ◽  
Author(s):  
Varun Bheemireddy

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>


Author(s):  
David J. Steigmann

This chapter develops two-dimensional membrane theory as a leading order small-thickness approximation to the three-dimensional theory for thin sheets. Applications to axisymmetric equilibria are developed in detail, and applied to describe the phenomenon of bulge propagation in cylinders.


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