Spray solution flow rate effect on growth, optoelectronic characteristics and photoluminescence of SnO2:F thin films for photovoltaic application

The Ar flow rate effect on the electrical and optical properties of the sputtered Al-doped ZnO thins films were investigated. It was shown that a strong X-ray peak from (002) and (004) planes is dominant, suggesting that most grains have c-axis perpendicular to the substrate surface. The (002)-ZnO and (004)-ZnO peaks were measured at 2q = 34.120, and 71.850, respectively. It was also found that the growth rate of the Al-doped ZnO thin films increases when the sputtering power is increased. The transmittance of these film are strongly dependent on the sputtering power with the maximum transmittance of 92% was obtained at the sputtering power of 150 W and 50 sccm of Ar flow rate. The resistivity of the films is decreases as the Ar flow rate is increased. The lowest resistivity of 9.74 x 10-4 W.cm was obtained at the films with Ar flow rate of 80 sccm. The mobility increases with the Ar flow rate increases. The carrier concentration also indicates the same pattern as the mobility. The transmittance of Al-doped ZnO thin films is also strongly dependent on the Ar flow rate. It was also observed the variation of contact resistivity of Al/Ti/Al to Al-doped n-ZnO thin films. The speciﬁc contact resistivity rc of 1.8x10−5 W.cm2 was obtained at 150 nm-thick Al.

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Disilane addition versus silane-hydrogen flow rate effect on the PECVD of silicon thin films

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4966957 ◽

2016 ◽

Vol 34 (6) ◽

pp. 061307

Author(s):

Panagiotis Dimitrakellis ◽

Eleftherios Amanatides ◽

Dimitrios Mataras ◽

Angelos G. Kalampounias ◽

Nikolaos Spiliopoulos ◽

...

Keyword(s):

Thin Films ◽

Flow Rate ◽

Rate Effect ◽

Hydrogen Flow Rate ◽

Hydrogen Flow ◽

Silicon Thin Films ◽

Flow Rate Effect

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Oxygen Flow Rate Effect on Copper Oxide Thin Films Deposited by Radio Frequency Magnetron Sputtering

Thin Solid Films ◽

10.1016/j.tsf.2021.139013 ◽

2021 ◽

pp. 139013

Author(s):

Rabah TADJINE ◽

Amina HOUIMI ◽

Mohamed Mounes ALIM ◽

Noureddine OUDINI

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Copper Oxide ◽

Flow Rate ◽

Oxygen Flow Rate ◽

Rate Effect ◽

Oxygen Flow ◽

Radio Frequency Magnetron Sputtering ◽

Flow Rate Effect

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Effect of substrate temperature and precursor ratio on properties of thin ZnS films sprayed by improved method

Materials Science-Poland ◽

10.2478/s13536-014-0224-y ◽

2014 ◽

Vol 32 (3) ◽

pp. 375-384 ◽

Cited By ~ 3

Author(s):

Rangnath Zaware ◽

Bhiva Wagh

Keyword(s):

Thin Films ◽

Optical Properties ◽

Substrate Temperature ◽

Flow Rate ◽

Gas Flow ◽

Impurity Content ◽

Solution Flow Rate ◽

Solution Flow ◽

Precursor Ratio ◽

Zns Films

AbstractZinc sulphide (ZnS) thin films were prepared by improved spray pyrolysis (ISP) method. The ISP parameters, such as carrier gas flow rate, solution flow rate and substrate temperature, were controlled with an accuracy of ±0.25 lpm, ±1 ml/h and ±1 °C, respectively. The solution was sprayed in a pulsed mode. The substrate temperature was optimized by analyzing substrate temperature dependent properties of thin films. The thin film deposited at a temperature of 450 °C was dense and fairly smooth with satisfactory crystallinity and very small impurity content. The effect of precursor ratio in the solution on structural, compositional and optical properties of thin ZnS films, deposited at a temperature of 450 °C, was studied. A gradual increase in band gap energy from 3.524 eV to 3.634 eV, refractive index from 2.5 to 2.9 and dielectric constant from 6.6 to 8.7 were observed with the variation of solution precursor (Zn:S) ratio from (1:2) to (1:6). The structural and compositional studies support this kind of enhancement in optical properties. The results show that the thin ZnS film prepared by ISP at the substrate temperature of 450 °C from a solution with specific precursor ratio can be used for optoelectronic and photovoltaic applications.

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