Effect of substrate temperature and precursor ratio on properties of thin ZnS films sprayed by improved method

AbstractZinc sulphide (ZnS) thin films were prepared by improved spray pyrolysis (ISP) method. The ISP parameters, such as carrier gas flow rate, solution flow rate and substrate temperature, were controlled with an accuracy of ±0.25 lpm, ±1 ml/h and ±1 °C, respectively. The solution was sprayed in a pulsed mode. The substrate temperature was optimized by analyzing substrate temperature dependent properties of thin films. The thin film deposited at a temperature of 450 °C was dense and fairly smooth with satisfactory crystallinity and very small impurity content. The effect of precursor ratio in the solution on structural, compositional and optical properties of thin ZnS films, deposited at a temperature of 450 °C, was studied. A gradual increase in band gap energy from 3.524 eV to 3.634 eV, refractive index from 2.5 to 2.9 and dielectric constant from 6.6 to 8.7 were observed with the variation of solution precursor (Zn:S) ratio from (1:2) to (1:6). The structural and compositional studies support this kind of enhancement in optical properties. The results show that the thin ZnS film prepared by ISP at the substrate temperature of 450 °C from a solution with specific precursor ratio can be used for optoelectronic and photovoltaic applications.

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The effect of solution flow rate and substrate temperature on structural and optical properties of TiO 2 films deposited by spray pyrolysis technique

Thin Solid Films ◽

10.1016/j.tsf.2016.11.040 ◽

2017 ◽

Vol 621 ◽

pp. 98-101 ◽

Cited By ~ 14

Author(s):

K. Farhadian Azizi ◽

M.- M. Bagheri- Mohagheghi

Keyword(s):

Optical Properties ◽

Substrate Temperature ◽

Spray Pyrolysis ◽

Flow Rate ◽

Spray Pyrolysis Technique ◽

Solution Flow Rate ◽

Structural And Optical Properties ◽

Solution Flow

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Properties of thin ZnS:Mn films sprayed by improved method: The role of Mn2+ ion concentration

Materials Science-Poland ◽

10.1515/msp-2017-0024 ◽

2017 ◽

Vol 35 (2) ◽

pp. 291-302 ◽

Cited By ~ 4

Author(s):

Rangnath V. Zaware ◽

Ratan Y. Borse ◽

Bhiva G. Wagh

Keyword(s):

Flow Rate ◽

Gas Flow ◽

Doping Concentration ◽

Ion Concentration ◽

Solution Flow Rate ◽

Mn Doping ◽

Spray Solution ◽

Yellow Orange ◽

Mn Doped ◽

Zns Films

Abstract Undoped and Mn-doped thin ZnS films were deposited on ordinary glass substrates at temperature of 450 °C by an improved spray pyrolysis (ISP) method. The ISP parameters, such as carrier gas flow rate, solution flow rate and substrate temperature, were controlled with accuracy ±0.25 Lpm, ±1 mL/h and ±1 °C, respectively. A pulse-spray mode of the method was used to spray the precursor solution. Thin film samples were prepared for Mn-doping with the concentrations of 0 at.%, 1 at.%, 3 at.%, 6 at.%, 8 at.% and 12 at.% relative to Zn in the spray solution. The Mn-doping concentration dependent chemical composition, surface morphology, and structural, optical and photoluminescence (PL) properties were studied. All the thin films were well adherent, nearly stoichiometric, dense, uniform, and possessed cubic crystal structure with preferential orientation along h〈1 1 1〉 direction. A slight enhancement in structural properties, an increase in band gap, and a decrease in refractive index and dielectric constant with Mn-doping concentration were observed. The PL spectra of Mn-doped thin ZnS films at room temperature exhibited both the 490 nm blue defect-related emission and the 590 nm yellow-orange Mn2+ ion related emission. The observed yellow-orange emission intensity was maximum for 3 at.% of Mn-doping concentration in the spray solution.

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