scholarly journals Automated Characterization of Single-Photon Avalanche Photodiode

2012 ◽  
Vol 12 (5) ◽  
Author(s):  
Aina Mardhiyah M. Ghazali ◽  
Audun Nystad Bugge ◽  
Sebastien Sauge ◽  
Vadim Makarov

We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 µW), dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on a Linux computer. ABSTRAK: Kami melaporkan pencirian pengesan foton tunggal secara automatik berdasarkan kepada diod foto runtuhan silikon (silicon avalanche photodiode) (PerkinElmer C30902SH) komersial. Pencirian  diod foto adalah berdasarkan kepada plot arus-voltan (I-V) pada tahap pencahayaan yang berbeza (kelam - tanpa cahaya, 10pW, dan 10µW), kadar bacaan latar belakang, kecekapan pengesanan foton pada voltan picuan yang berbeza. Pengaturcaraan C++ digunakan di dalam rutin pencirian automatik melalui komputer dengan sistem pengendalian LINUX.KEYWORDS: avalanche photodiode (APD); single photon detector; photon counting; experiment automation

2021 ◽  
Vol 16 (4) ◽  
pp. 546-551
Author(s):  
Mei-Ling Zeng ◽  
Yang Wang ◽  
Xiang-Liang Jin ◽  
Yan Peng ◽  
Jun Luo

Single-photon avalanche diodes (SPADs) can detect extremely weak optical signals and are mostly used in single-photon imaging, quantum communication, medical detection, and other fields. In this paper, a low dark count rate (DCR) single-photon avalanche diode device is designed based on the 180 nm standard BCD process. The device has a good response in the 450~750 nm spectral range. The active area of the device adopts a P+/N-Well structure with a diameter of 20 µm. The low-doped N-Well increases the thickness of the depletion region and can effectively improve the detection sensitivity; the P-Well acts as a guard ring to prevent premature breakdown of the PN junction edge; the isolation effect of the deep N-Well reduces the noise coupling of the substrate. Use the TCAD simulation tool to verify the SPAD’s basic principles. The experimental test results show that the avalanche breakdown voltage of the device is 11.7 V. The dark count rate is only 123 Hz when the over-bias voltage is 1 V, and the peak photon detection efficiency (PDE) reaches 37.5% at the wavelength of 500 nm under the 0.5 V over-bias voltage. PDE exceeds 30% in the range of 460~640 nm spectral range, which has a good response in the blue band. The SPAD device provides certain design ideas for the research of fluorescence detectors.


2021 ◽  
Vol 8 (1) ◽  
Author(s):  
Elena Anisimova ◽  
Dmitri Nikulov ◽  
Simeng Simone Hu ◽  
Mark Bourgon ◽  
Sebastian Philipp Neumann ◽  
...  

AbstractWe build and test a single-photon detector based on a Si avalanche photodiode Excelitas 30902SH thermoelectrically cooled to −100∘C. Our detector has dark count rate below 1 Hz, $500\ \mu\mathrm{m}$ 500 μ m diameter photosensitive area, photon detection efficiency around 50%, afterpulsing less than 0.35%, and timing jitter under 1 ns. These characteristics make it suitable for long-distance free-space quantum communication links, which we briefly discuss. We also report an improved method that we call long-time afterpulsing analysis, used to determine and visualise long trap lifetimes at different temperatures.


2009 ◽  
Vol 19 (01) ◽  
pp. 85-92
Author(s):  
ALEXEY VERT ◽  
STANSILAV SOLOVIEV ◽  
JODY FRONHEISER ◽  
PETER SANDVIK

A solar blind 4 H - SiC single photon avalanche diode (SPAD) is reported. The SPAD with separate absorption and multiplication layers was designed for operation with low dark counts. A thin film optical filter deposited on a sapphire window of the device package provided sensitivity in the wavelength range between 240 and 280 nm with a very high solar photon rejection ratio. An estimated dark current of 0.4 pA (0.75 nA/cm2) at a gain of 1000 was measured on a device with an effective mesa diameter of 260 µm. A single photon detection efficiency of 9% (linear mode) and 9.5% (gated Geiger mode) were achieved at a wavelength of 266 nm for the same device. Corresponding dark count rate and dark count probability were 600 Hz and 4×10-4.


Author(s):  
А.С. Кузанян ◽  
А.А. Кузанян ◽  
В.Н. Гурин ◽  
М.П. Волков ◽  
В.Р. Никогосян

AbstractA design for a high-efficiency single-photon detector based on lanthanum and cerium hexaborides, which operates from the infrared to ultraviolet spectral ranges, is suggested. The results of computer simulations of heat transfer in the sensitive element of the detector upon the absorption of photons with energies of 0.5–4.13 eV are presented. To attain a high efficiency of the system of photon detection in the wavelength range from near infrared to ultraviolet, lanthanum hexaboride is proposed as the absorber and heat-sink material in the sensitive element. It is shown that a sensitive element of both single- and three-layer design made entirely of hexaborides will possess a gigahertz counting rate and a detection efficiency exceeding 90%.


2011 ◽  
Vol 36 (17) ◽  
pp. 3446 ◽  
Author(s):  
Maria Daniela Santabaia Cavalcanti ◽  
Fábio Alencar Mendonça ◽  
Rubens Viana Ramos

Sensors ◽  
2021 ◽  
Vol 21 (16) ◽  
pp. 5287
Author(s):  
Hiwa Mahmoudi ◽  
Michael Hofbauer ◽  
Bernhard Goll ◽  
Horst Zimmermann

Being ready-to-detect over a certain portion of time makes the time-gated single-photon avalanche diode (SPAD) an attractive candidate for low-noise photon-counting applications. A careful SPAD noise and performance characterization, however, is critical to avoid time-consuming experimental optimization and redesign iterations for such applications. Here, we present an extensive empirical study of the breakdown voltage, as well as the dark-count and afterpulsing noise mechanisms for a fully integrated time-gated SPAD detector in 0.35-μm CMOS based on experimental data acquired in a dark condition. An “effective” SPAD breakdown voltage is introduced to enable efficient characterization and modeling of the dark-count and afterpulsing probabilities with respect to the excess bias voltage and the gating duration time. The presented breakdown and noise models will allow for accurate modeling and optimization of SPAD-based detector designs, where the SPAD noise can impose severe trade-offs with speed and sensitivity as is shown via an example.


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