Accelerating the formation of high-quality optical surface layer in ZnO thin films by the increase of heat-treatment temperature

Optik ◽  
2021 ◽  
Vol 232 ◽  
pp. 166527
Author(s):  
Haisu Qian ◽  
Linhua Xu ◽  
Fenglin Xian ◽  
Jing Su ◽  
Xiaoqiang Luo
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Surface Layer ◽  
Heat Treatment Temperature ◽  
Treatment Temperature ◽  
Zno Thin Films ◽  
Optical Surface ◽  
High Quality

Effect of Heat Treatment Temperature on the Formation of Ag Nanoparticles in Ag-PbTiO3Composite Thin Films

2009 ◽  
Vol 387 (1) ◽  
pp. 161-166 ◽  
Author(s):  
Zongrong Wang ◽  
Tao Hu ◽  
Liwen Tang ◽  
Chenlu Song ◽  
Gaorong Han ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Ag Nanoparticles ◽  
Heat Treatment Temperature ◽  
Treatment Temperature

Phase partitioning and epitaxy of Zr(Al)O2 thin films on cubic zirconia substrates

1995 ◽  
Vol 10 (7) ◽  
pp. 1756-1763 ◽  
Author(s):  
P.K. Narwankar ◽  
J.S. Speck ◽  
F.F. Lange
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Phase Formation ◽  
Epitaxial Layer ◽  
Heat Treatment Temperature ◽  
Single Phase ◽  
Treatment Temperature ◽  
Liquid Precursor ◽  
Phase Partitioning ◽  
Precursor Route

Thin films of ZrO2-Al2O3 were grown on cubic-Zr(Y)O2 substrates by a liquid precursor route. Phase formation and epitaxy of these films was studied as a function of heat-treatment temperature and time. The following sequence of phases was observed in these thin films: Precursor → t-(Zr,Al)O2 → t-(Zr,Al)O2 + γ-(Al,Zr)2O3 → m-ZrO2 + α-Al2O3 Observations strongly suggest that the epitaxial process initiated before the metastable, single phase t-(Zr, Al)O2 partitioned to t-(Zr, Al)O2 + γ-(Al, Zr)2O3. Observations at 1400 °C show that, after the γ to α transformation, α-Al2O3, grains develop an elongated, prismatic morphology and an epitaxial relation with the underlying and surrounding m-ZrO2. The phase that is chemically and structurally similar to the substrate, in this case t-(Zr,Al)O2, or m-ZrO2, forms an epitaxial layer between the substrate and isolated, prismatic grains of heteroepitaxial α-Al2O3.

Texture Formation and Superconducting Properties of YBa2Cu3Ox Thin Films Prepared by Solution Process on LaAlO3 Single Crystals

2000 ◽  
Vol 659 ◽  
Author(s):  
Y.-A Jee ◽  
B. Ma ◽  
M. Li ◽  
B. L. Fisher ◽  
U. Balachandran
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Raman Spectroscopy ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Phase Formation ◽  
Heat Treatment Temperature ◽  
Treatment Temperature ◽  
Argon Atmosphere ◽  
Second Phase

ABSTRACTYBa2Cu3Ox (YBCO) thin films were fabricated by the trifluoroacetate (TFA) process on LaAlO3 (LAO) single crystal in an argon atmosphere. We focused on lowering the heat treatment temperature by decreasing the oxygen partial pressure to adopt the TFA process to metallic substrates. YBCO phase formation was checked by measuring Tc with the inductive method. In-plane and out-of-plane film textures were evaluated by phi-scan and omega scan, respectively. Raman spectroscopy was used to estimate grain connectivity, in-plane texture, and second-phase formation of the films. Although Raman spectroscopy revealed some evidence of cation disorder, the film prepared at 750°C shows a sharp superconducting transition at 91 K and critical current density of 1.3 MA/cm2 at 77 K. Optimal heat treatment temperature was 750°C in the argon atmosphere, which is consistent with the thermodynamic estimate that heat treatment temperature decreases as oxygen partial pressure decreases.

Luminance Characterization of La3Ga5SiO14 Thin Films by Sputtering Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 3514-3519
Author(s):  
Yi Hu ◽  
Feng Wei Wang ◽  
Hur Lon Lin
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Crystalline Phase ◽  
Heat Treatment Temperature ◽  
Luminescent Properties ◽  
Treatment Temperature ◽  
Emission Peak ◽  
Sputtering Deposition ◽  
The Relationship

La3Ga5SiO14 (LGS) thin films were grown on (200)-textured MgO buffer layer, which was deposited on the silicon wafer, by sputtering at 600°C. These thin films were annealed and transformed form amorphous to the LGS crystalline phase with the heat treatment temperature higher than 1150°C. It was found that the films with LGS crystalline phase showed luminescent characterization whereas the LGS sintered solids did not. The emission peak of the films was found to be 438 nm under the excited light of λex=300nm. Effects of annealed temperature on the luminescent properties of the thin films are investigated. The relationship between the mechanism of luminescence and the crystalline structure of the LGS films are discussed.

Sol-Gel Fabrication of Low Temperature Organic-Inorganic Hybrid Film Patterns for Photonic Applications

2007 ◽  
Vol 31 ◽  
pp. 14-16
Author(s):  
Wen Xiu Que ◽  
X.M. Ren ◽  
W. Zhang ◽  
W.J. Jiang ◽  
Y. Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Low Temperature ◽  
Heat Treatment Temperature ◽  
Sol Gel ◽  
Titanium Content ◽  
Treatment Temperature ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Hybrid Thin Films

Titania/organically modified silane hybrid thin films for photonic applications were prepared by combining a low temperature sol-gel technique and a spin-coating process from an organic-inorganic hybrid system. Effects of the titanium content and heat treatment temperature on the structural and optical properties of the hybrid thin films were characterized by atomic force microscopy and UV-visible spectroscopy. It is found that the optical and microstructural properties of the hybrid thin films depend on the heat-treatment temperature and titanium molar contents. The thickness and the refractive index of the hybrid thin films were also measured and found to be related to the heat treatment temperature and titanium molar content. These results indicate that a dense and high transparent hybrid thin film can be obtained at a low heat treatment temperature. Potential photonic device structural patterns can easily fabricated from the as-prepared hybrid thin films by using etching process.

The Properties of Antimony-Doped Tin Oxide Thin Films by the Sol-Gel Approach

2007 ◽  
Vol 280-283 ◽  
pp. 831-834 ◽  
Author(s):  
Lan Zhao ◽  
Dao Li Zhang ◽  
Gang Du ◽  
Jian Mei Xu ◽  
Dong Xiang Zhou
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Tin Oxide ◽  
Heat Treatment Temperature ◽  
Sol Gel ◽  
Treatment Temperature ◽  
Oxide Thin Films ◽  
Conductive Coatings ◽  
Rutile Structure ◽  
Optimum Heat

Antimony-doped tin oxide thin films have a range of technical applications as conductive coatings, and sol-gel processing seems to offer some advantages over other coating techniques. In this study, the sol was prepared by sol-gel approach from SnO2·H2O and SbCl3 in alcohol. It was found that the heat-treatment temperature and doping level have strong influences on the microstructure and composition of Sb: SnO2 films. The SnO2 crystals exist mainly as tetragonal rutile structure. The optimum heat-treatment temperature is about 450 ~ 500°C, and the film is composed with nanocrystals and nano-pores. Microstructure and the electrical behaviors of Sb-doped SnO2 thin films derived by sol-gel process were investigated.

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