The removal mechanism and force modelling of gallium oxide single crystal in single grit grinding and nanoscratching

2021 ◽  
pp. 106562
Author(s):  
Yongqiang Wang ◽  
Xuliang Li ◽  
Yueqin Wu ◽  
Dekui Mu ◽  
Han Huang
Keyword(s):  
Single Crystal ◽  
Gallium Oxide ◽  
Removal Mechanism ◽  
Single Grit Grinding

Influence of diamond wire saw slicing parameters on (010) lattice plane beta-gallium oxide single crystal wafer

2021 ◽  
Vol 133 ◽  
pp. 105939
Author(s):  
Pengcheng Gao ◽  
Baimei Tan ◽  
Fan Yang ◽  
Hui Li ◽  
Na Bian ◽  
...  
Keyword(s):  
Single Crystal ◽  
Gallium Oxide ◽  
Lattice Plane ◽  
Diamond Wire ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
Crystal Wafer

Fundamental study on material removal mechanism in single-crystal germanium

2021 ◽  
pp. 103773
Author(s):  
Ruiwen Geng ◽  
Xiaojing Yang ◽  
Qiming Xie ◽  
Jianguo Xiao ◽  
Wanqing Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Fundamental Study

scholarly journals Anisotropic thermal conductivity in single crystal β-gallium oxide

2015 ◽  
Vol 106 (11) ◽  
pp. 111909 ◽  
Author(s):  
Zhi Guo ◽  
Amit Verma ◽  
Xufei Wu ◽  
Fangyuan Sun ◽  
Austin Hickman ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
Gallium Oxide ◽  
Anisotropic Thermal Conductivity

Deformation Mechanism of Diamond Nanocutting Single-Crystal Copper Using Molecular Dynamics Simulatio

2011 ◽  
Vol 239-242 ◽  
pp. 2775-2778
Author(s):  
Jia Xuan Chen ◽  
Ying Chun Liang ◽  
Xia Yu ◽  
Zhi Guo Wang ◽  
Zhen Tong
Keyword(s):  
Molecular Dynamics ◽  
Single Crystal ◽  
Cutting Force ◽  
Dislocation Loop ◽  
Deformation Mechanism ◽  
Molecular Dynamics Method ◽  
Parameter Method ◽  
Removal Mechanism ◽  
Single Crystal Copper ◽  
Dynamics Method

To study the removal mechanism of materials during nano cutting, molecular dynamics method is adopted to simulate single crystal copper nanomachining processes, and subsurface defects evolvements and chip forming regulation are analyzed by revised centro-symmetry parameter method and the ratios of the tangential cutting forceand the normal cutting force. The results show that there are different defects under different cutting depths. When cutting depths is shallower, there are dislocation loop nucleation in the subsurface of the workpiece beneath the tool; however, when the cutting depths is deeper, there are dislocations nucleation and slipping along {101} plane and (111) plane. In addition, both tangential cutting forceand the normal cutting force decrease as the cutting depths decreasing. When the ratios of the normal cutting force and the tangential cutting force is below 0.9, the chip will be formed.

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

2012 ◽  
Vol 100 (1) ◽  
pp. 013504 ◽  
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Akito Kuramata ◽  
Takekazu Masui ◽  
Shigenobu Yamakoshi
Keyword(s):  
Single Crystal ◽  
Gallium Oxide ◽  
Field Effect ◽  
Field Effect Transistors
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