Novel packaging design for high-power GaN-on-Si high electron mobility transistors (HEMTs)

2013 ◽  
Vol 66 ◽  
pp. 63-70 ◽  
Author(s):  
Stone Cheng ◽  
Po-Chien Chou
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Packaging Design ◽  
Electron Mobility Transistors ◽  
Gan On Si

Trapping Effects Dependence on Electron Confinement in Ultrashort GaN-on-Si High-Electron-Mobility Transistors

2012 ◽  
Vol 5 (3) ◽  
pp. 034103
Author(s):  
Farid Medjdoub ◽  
Damien Ducatteau ◽  
Malek Zegaoui ◽  
Bertrand Grimbert ◽  
Nathalie Rolland ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Confinement ◽  
Electron Mobility Transistors ◽  
Gan On Si ◽  
Trapping Effects
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