A novel 3D supramolecular inorganic–metal–organic architecture with honeycomb-like motifs directed by the water tetramer and sulfate anion

2008 ◽  
Vol 11 (2) ◽  
pp. 129-133 ◽  
Author(s):  
Hong Wang ◽  
Jian-Qiang Liu ◽  
Ya-Nan Zhang ◽  
Yao-Yu Wang ◽  
Gui-Lin Wen ◽  
...  
Keyword(s):  
Sulfate Anion ◽  
Metal Organic ◽  
Organic Architecture

scholarly journals A new one-dimensional NiIIcoordination polymer with a two-dimensional supramolecular architecture

2017 ◽  
Vol 73 (2) ◽  
pp. 192-195
Author(s):  
Kai-Long Zhong
Keyword(s):  
Hydrogen Bonds ◽  
Water Molecule ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Sulfate Ions ◽  
Sulfate Anion ◽  
One Dimensional ◽  
X Ray ◽  
Distorted Octahedral ◽  
Metal Organic

A new one-dimensional NiIIcoordination polymer of 1,3,5-tris(imidazol-1-ylmethyl)benzene, namelycatena-poly[[aqua(sulfato-κO)hemi(μ-ethane-1,2-diol-κ2O:O′)[μ3-1,3,5-tris(1H-imidazol-1-ylmethyl)benzene-κ3N3,N3′,N3′′]nickel(II)] ethane-1,2-diol monosolvate monohydrate], {[Ni(SO4)(C18H18N6)(C2H6O2)0.5(H2O)]·C2H6O2·H2O}n, was synthesized and characterized by elemental analysis, IR spectroscopy and single-crystal X-ray diffraction. The NiIIcation is coordinated by three N atoms of three different 1,3,5-tris(imidazol-1-ylmethyl)benzene ligands, one O atom of an ethane-1,2-diol molecule, by a sulfate anion and a water molecule, forming a distorted octahedral NiN3O3coordination geometry. The tripodal 1,3,5-tris(imidazol-1-ylmethyl)benzene ligands link the NiIIcations, generating metal–organic chains running along the [100] direction. Adjacent chains are further connected by O—H...O hydrogen bonds, resulting in a two-dimensional supermolecular architecture running parallel to the (001) plane. Another water molecule and a second ethane-1,2-diol molecule are non-coordinating and are linked to the coordinating sulfate ionsviaO—H...O hydrogen bonds.

Structural Impact of Infinite Water Chains on the Self-Assembly of an Inorganic−Metal−Organic Architecture

2006 ◽  
Vol 6 (5) ◽  
pp. 1068-1070 ◽  
Author(s):  
Daniel L. Reger ◽  
Radu F. Semeniuc ◽  
Claudio Pettinari ◽  
Francisco Luna-Giles ◽  
Mark D. Smith
Keyword(s):  
Self Assembly ◽  
The Self ◽  
Structural Impact ◽  
Metal Organic ◽  
Organic Architecture

2D d10 Metal Assembly Frameworks: Construction of Metal–organic Architecture with Metal Thiocyanate and Dipyridyl Spacer

2010 ◽  
Vol 41 (4) ◽  
pp. 533-536 ◽  
Author(s):  
Zhong-Ming Gu ◽  
Qing-Li Wang ◽  
Yun-Yin Niu ◽  
Xiao-Ling Guo ◽  
Hong-Wei Hou ◽  
...  
Keyword(s):  
D10 Metal ◽  
Metal Organic ◽  
Organic Architecture

Formation of a three-dimensional bispyridyl based metal–organic architecture containing unique Ag⋯Ag (d10–d10) interactions

2008 ◽  
Vol 19 (5) ◽  
pp. 604-606 ◽  
Author(s):  
Xiao Ling Guo ◽  
Yun Yin Niu ◽  
Qing Li Wang ◽  
Ben Lai Wu ◽  
Hong Yun Zhang ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Metal Organic ◽  
Organic Architecture

scholarly journals Poly[[tetraaquabis(μ-hydroxyacetato-κ4O1,O2:O1,O1′)-μ2-sulfato-κ2O:O′-dicadmium(II)] monohydrate]

2009 ◽  
Vol 65 (6) ◽  
pp. m648-m649 ◽  
Author(s):  
Urszula Rychlewska ◽  
Beata Warzajtis ◽  
Mirjana Dj. Dimitrijević ◽  
Nenad S. Draskovic ◽  
Miloš I. Djuran
Keyword(s):  
Crystal Structure ◽  
Hydrogen Bonds ◽  
Ethylenediaminetetraacetic Acid ◽  
Metal Organic Framework ◽  
Water Molecules ◽  
Two Dimensional ◽  
Sulfate Anion ◽  
Solvent Water ◽  
Acid Type ◽  
Metal Organic

The title compound, {[Cd2(C2H3O3)2(SO4)(H2O)4]·H2O}n, was obtained unintentionally in a transmetallation reaction. The crystal structure contains a two-dimensional metal–organic framework based on CdII–(μ-hydroxyacetato-κ4O1,O2:O1,O1′)–CdIIzigzag chains joined together by bridging SO4anions. The resulting layers are shifted with respect to each other and are stacked along thecaxis. Their construction is supported by hydrogen bonds between water molecules and between water molecules and carboxylate or sulfate groups. Neighbouring layers are bridged by hydrogen bonds between the hydroxyl substituent and a sulfate anion. The sulfate anion and solvent water molecule are located on twofold axes. The results demonstrate that care must be taken when preparing ethylenediaminetetraacetic acid-type complexes by transmetallation, in order to avoid precipitation of metal complexes with the α-hydroxyacetate ligand.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Structural and electronic properties of defects in semiconductors

1995 ◽  
Vol 53 ◽  
pp. 4-5
Author(s):  
J.L. Batstone
Keyword(s):  
Semiconductor Device ◽  
Chemical Vapor ◽  
Misfit Strain ◽  
Organic Chemical ◽  
Extended Defects ◽  
Transmission Electron ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Metal Organic ◽  
Film Substrate

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

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