Ferroelectric and piezoelectric properties of lead-free BaTiO3 doped Bi0.5Na0.5TiO3 thin films from metal-organic solution deposition

Highly (100)-oriented LaNiO3 (LNO) thin films were prepared on p-type Si (100) substrates by metal organic solution deposition (MOSD). The LNO thin films were driven by series precursor solutions with different ratio of acetic acid to deionized water (Raaw) and pH values. The dependences of viscosity, pH value and the thermal property of the gel-derived powders of the precursor solution on Raaw values were systematically investigated. AFM images showed that Raaw can dramatically influence the surface roughness. When Raaw changed from 7:1 to 1:1, the surface roughness decreased from 3.695 nm to 1.488 nm. The resistivities of all the films are less than 2.1×10-3Ω·cm. It shows that the precursor solution has strong effect on the microstructure of the thin films and relatively slight effect on the resistivity.

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Effects of a Bi/sub 4/Ti/sub 3/O/sub 12/ buffer layer on SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films prepared by the metal organic solution deposition technique

ISAF 1998. Proceedings of the Eleventh IEEE International Symposium on Applications of Ferroelectrics (Cat. No.98CH36245) ◽

10.1109/isaf.1998.786661 ◽

2002 ◽

Author(s):

G.D. Hu ◽

J.B. Xu ◽

I.H. Wilson ◽

W.Y. Cheung ◽

N. Ke ◽

...

Keyword(s):

Thin Films ◽

Buffer Layer ◽

Deposition Technique ◽

Organic Solution ◽

Solution Deposition ◽

Metal Organic

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Ferroelectric and piezoelectric properties of La-modified lead-free (Bi0.5Na0.5)TiO3–(Bi0.5K0.5)TiO3–SrTiO3 thin films

Ceramics International ◽

10.1016/j.ceramint.2014.11.140 ◽

2015 ◽

Vol 41 (3) ◽

pp. 4479-4486 ◽

Cited By ~ 16

Author(s):

Peng Li ◽

Wei Li ◽

Huarong Zeng ◽

Shaohui Liu ◽

Wei Wang ◽

...

Keyword(s):

Thin Films ◽

Piezoelectric Properties ◽

Lead Free ◽

Ferroelectric And Piezoelectric Properties

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Structural and optical properties of Bi4−xNdxTi3O12 thin films prepared by metal-organic solution deposition

Materials Letters ◽

10.1016/j.matlet.2003.07.018 ◽

2004 ◽

Vol 58 (5) ◽

pp. 813-816 ◽

Cited By ~ 15

Author(s):

Yuehua Wang ◽

Guoding Xu ◽

Xuejin Zhang ◽

Yan Feng ◽

Weishi Tang ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Organic Solution ◽

Structural And Optical Properties ◽

Solution Deposition ◽

Metal Organic

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Raman Study of SrBi2Ta2O9 Bi3TiNbO9 Thin Films

MRS Proceedings ◽

10.1557/proc-541-247 ◽

1998 ◽

Vol 541 ◽

Cited By ~ 1

Author(s):

W. Pérez ◽

E Ching-Prado ◽

P.S. Dobal ◽

A. Reynés-Figueroa ◽

R.S. Katiyar ◽

...

Keyword(s):

Thin Films ◽

Raman Spectra ◽

Layered Structure ◽

Deposition Method ◽

Organic Solution ◽

Solution Deposition ◽

Si Substrates ◽

Metal Organic ◽

Raman Study

AbstractThin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1−x layered structure were prepared for x = 0.0, 0.2, 0.4, 0.6, 0.8, and 1.0, by metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. The micro-Raman studies reveal that the samples are mostly homogeneous. The Raman sprectrum for the film with x = 0 shows bands around 60, 170, 232, 256, 337, 569, and 839 cm−1, which indicate Bi3TiNbO9 (BTN) formation. The prominent band around 839 cm−1, which is an A1g mode of the orthorombic symmetry, corresponds to symmetric stretching of the BO6 octahedra. The frequency of this band is found to shift significantly as SrBi2Ta2O9(SBT) material is added to the BTN compound. In this paper, the evolution of the Raman bands with the inclusion of SBT material are presented and discussed. Finally, The Raman spectra of SBT- BTN films are compared with those obtained in SBT-BTN bulk ceramics.

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Dielectric and Piezoelectric Properties of Ba(Ti,Zr)O3 Thin Films Consisted of Nano-Crystals

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.301.53 ◽

2006 ◽

Vol 301 ◽

pp. 53-56 ◽

Cited By ~ 1

Author(s):

Kiyotaka Tanaka ◽

Kazuyuki Suzuki ◽

Tatsuo Kimura ◽

Kaori Nishizawa ◽

Takeshi Miki ◽

...

Keyword(s):

Thin Films ◽

Dielectric Constant ◽

Chemical Solution Deposition ◽

Piezoelectric Properties ◽

Lead Free ◽

Chemical Solution ◽

Sintering Process ◽

Solution Deposition ◽

Crystallite Sizes ◽

Dielectric And Piezoelectric Properties

Lead-free Ba(Ti1-xZrx)O3 (BTZ) thin films were fabricated on Pt(111)/Ti/SiO2/Si(100) substrates by the chemical solution deposition (CSD) process. The microstructure of the BTZ (x = 0.00 to 0.20) thin films was improved by additional sintering process, and their crystallite sizes were increased in each composition. The dielectric constant er and piezoelectric constant d33 of the BTZ thin films depended on the crystallite size. We give a guide for further investigation to improve the characteristics of BTZ thin films.

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THICKNESS-DEPENDENCE OF RESIDUAL STRESS IN LEAD-FREE FERROELECTRIC K0.5Na0.5NbO3 FILMS

Journal of Advanced Dielectrics ◽

10.1142/s2010135x1250021x ◽

2012 ◽

Vol 02 (04) ◽

pp. 1250021 ◽

Cited By ~ 2

Author(s):

LINGYAN WANG ◽

WEI REN ◽

PHOI CHIN GOH ◽

KUI YAO ◽

PENG SHI ◽

...

Keyword(s):

Residual Stress ◽

Chemical Solution Deposition ◽

Piezoelectric Properties ◽

Lead Free ◽

Chemical Solution ◽

X Ray Diffraction ◽

Solution Deposition ◽

X Ray ◽

Compressive Stresses ◽

Ferroelectric And Piezoelectric Properties

Lead-free ferroelectric K0.5Na0.5NbO3 (KNN) films with different thicknesses were prepared by polyvinlypyrrolidone (PVP)-modified chemical solution deposition (CSD) method. Their residual stresses were studied with two methods of X-ray diffraction (XRD) and nanoindentation fracture. It was found that the tensile stress occurs in KNN films with small thickness of 1.3 μm after all kinds of stresses were neutralized, which is mainly originated from the interaction across grain boundaries. With increasing the thickness to 2.5 μm and above it, the residual stress changed from tensile stresses to compressive stresses, and the compressive stress decreased with the thickness increased. These results could explain why a thicker KNN film can show improved electrical properties and the larger the thickness, the better the ferroelectric and piezoelectric properties.

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