Effects of a Bi/sub 4/Ti/sub 3/O/sub 12/ buffer layer on SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films prepared by the metal organic solution deposition technique

2002 ◽  
Author(s):  
G.D. Hu ◽  
J.B. Xu ◽  
I.H. Wilson ◽  
W.Y. Cheung ◽  
N. Ke ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Deposition Technique ◽  
Organic Solution ◽  
Solution Deposition ◽  
Metal Organic

Effect of Acetic Acid/Water Ratio on the Microstructure and Properties of LaNiO3 Thin Films by Metal Organic Solution Deposition

2015 ◽  
Vol 815 ◽  
pp. 89-93
Author(s):  
Yuan Yuan Zhang ◽  
Xiao Dong Tang ◽  
Gen Shui Wang ◽  
Xian Lin Dong
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Acetic Acid ◽  
Ph Value ◽  
Precursor Solution ◽  
Organic Solution ◽  
Solution Deposition ◽  
Ph Values ◽  
Metal Organic ◽  
Acetic Acid Water

Highly (100)-oriented LaNiO3 (LNO) thin films were prepared on p-type Si (100) substrates by metal organic solution deposition (MOSD). The LNO thin films were driven by series precursor solutions with different ratio of acetic acid to deionized water (Raaw) and pH values. The dependences of viscosity, pH value and the thermal property of the gel-derived powders of the precursor solution on Raaw values were systematically investigated. AFM images showed that Raaw can dramatically influence the surface roughness. When Raaw changed from 7:1 to 1:1, the surface roughness decreased from 3.695 nm to 1.488 nm. The resistivities of all the films are less than 2.1×10-3Ω·cm. It shows that the precursor solution has strong effect on the microstructure of the thin films and relatively slight effect on the resistivity.

Structural and optical properties of Bi4−xNdxTi3O12 thin films prepared by metal-organic solution deposition

2004 ◽  
Vol 58 (5) ◽  
pp. 813-816 ◽  
Author(s):  
Yuehua Wang ◽  
Guoding Xu ◽  
Xuejin Zhang ◽  
Yan Feng ◽  
Weishi Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Organic Solution ◽  
Structural And Optical Properties ◽  
Solution Deposition ◽  
Metal Organic

Raman Study of SrBi2Ta2O9 Bi3TiNbO9 Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
W. Pérez ◽  
E Ching-Prado ◽  
P.S. Dobal ◽  
A. Reynés-Figueroa ◽  
R.S. Katiyar ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectra ◽  
Layered Structure ◽  
Deposition Method ◽  
Organic Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Metal Organic ◽  
Raman Study

AbstractThin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1−x layered structure were prepared for x = 0.0, 0.2, 0.4, 0.6, 0.8, and 1.0, by metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. The micro-Raman studies reveal that the samples are mostly homogeneous. The Raman sprectrum for the film with x = 0 shows bands around 60, 170, 232, 256, 337, 569, and 839 cm−1, which indicate Bi3TiNbO9 (BTN) formation. The prominent band around 839 cm−1, which is an A1g mode of the orthorombic symmetry, corresponds to symmetric stretching of the BO6 octahedra. The frequency of this band is found to shift significantly as SrBi2Ta2O9(SBT) material is added to the BTN compound. In this paper, the evolution of the Raman bands with the inclusion of SBT material are presented and discussed. Finally, The Raman spectra of SBT- BTN films are compared with those obtained in SBT-BTN bulk ceramics.

Preparation and characterization of Bi2Ti2O7 thin films by chemical solution deposition technique

2000 ◽  
Vol 370 (1-2) ◽  
pp. 30-32 ◽  
Author(s):  
XianMing Wu ◽  
Sh.W. Wang ◽  
H. Wang ◽  
Z. Wang ◽  
S.X. Shang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Solution Deposition

scholarly journals Properties of BaBi2Ta2O9 thin films prepared by chemical solution deposition technique for dynamic random-access memory applications

1999 ◽  
Vol 14 (5) ◽  
pp. 1860-1864 ◽  
Author(s):  
C. R. Foschini ◽  
P. C. Joshi ◽  
J. A. Varela ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Current Density ◽  
Chemical Solution Deposition ◽  
Random Access ◽  
Random Access Memory ◽  
Chemical Solution ◽  
Deposition Technique ◽  
Access Memory ◽  
Solution Deposition

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650 °C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700 °C for 60 min. The leakage current density of the films was lower than 10−9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.

BiFeO3 thin films prepared on metallic Ni tapes by chemical solution deposition: effects of annealing temperature and a La0.5Sr0.5TiO3 buffer layer on the dielectric, ferroelectric and leakage properties

RSC Advances ◽  
2014 ◽  
Vol 4 (62) ◽  
pp. 32738-32743 ◽  
Author(s):  
Xianwu Tang ◽  
Ling Hu ◽  
Jie Yang ◽  
Li Chen ◽  
Jianming Dai ◽  
...  
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Chemical Solution Deposition ◽  
Annealing Temperature ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Bifeo3 Thin Films

Introducing a La0.5Sr0.5TiO3 buffer layer is beneficial for the microstructures and properties of BiFeO3 thin films on metallic tapes.

Sign in / Sign up

Export Citation Format

Share Document