Raman Study of SrBi2Ta2O9 Bi3TiNbO9 Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
W. Pérez ◽  
E Ching-Prado ◽  
P.S. Dobal ◽  
A. Reynés-Figueroa ◽  
R.S. Katiyar ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectra ◽  
Layered Structure ◽  
Deposition Method ◽  
Organic Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Metal Organic ◽  
Raman Study

AbstractThin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1−x layered structure were prepared for x = 0.0, 0.2, 0.4, 0.6, 0.8, and 1.0, by metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. The micro-Raman studies reveal that the samples are mostly homogeneous. The Raman sprectrum for the film with x = 0 shows bands around 60, 170, 232, 256, 337, 569, and 839 cm−1, which indicate Bi3TiNbO9 (BTN) formation. The prominent band around 839 cm−1, which is an A1g mode of the orthorombic symmetry, corresponds to symmetric stretching of the BO6 octahedra. The frequency of this band is found to shift significantly as SrBi2Ta2O9(SBT) material is added to the BTN compound. In this paper, the evolution of the Raman bands with the inclusion of SBT material are presented and discussed. Finally, The Raman spectra of SBT- BTN films are compared with those obtained in SBT-BTN bulk ceramics.

Effect of Acetic Acid/Water Ratio on the Microstructure and Properties of LaNiO3 Thin Films by Metal Organic Solution Deposition

2015 ◽  
Vol 815 ◽  
pp. 89-93
Author(s):  
Yuan Yuan Zhang ◽  
Xiao Dong Tang ◽  
Gen Shui Wang ◽  
Xian Lin Dong
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Acetic Acid ◽  
Ph Value ◽  
Precursor Solution ◽  
Organic Solution ◽  
Solution Deposition ◽  
Ph Values ◽  
Metal Organic ◽  
Acetic Acid Water

Highly (100)-oriented LaNiO3 (LNO) thin films were prepared on p-type Si (100) substrates by metal organic solution deposition (MOSD). The LNO thin films were driven by series precursor solutions with different ratio of acetic acid to deionized water (Raaw) and pH values. The dependences of viscosity, pH value and the thermal property of the gel-derived powders of the precursor solution on Raaw values were systematically investigated. AFM images showed that Raaw can dramatically influence the surface roughness. When Raaw changed from 7:1 to 1:1, the surface roughness decreased from 3.695 nm to 1.488 nm. The resistivities of all the films are less than 2.1×10-3Ω·cm. It shows that the precursor solution has strong effect on the microstructure of the thin films and relatively slight effect on the resistivity.

A Structural Study of SrBi2Ta2O9 - Bi3TiNbO9 Ferroelectric Thin Films

1999 ◽  
Vol 596 ◽  
Author(s):  
E. Ching-Prado ◽  
W. Pérez ◽  
P. S. Dobalt ◽  
R. S. Katiyart ◽  
S. Tirumala ◽  
...  
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Solution Deposition ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Metal Organic

AbstractThin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1-x layered structure (for x = 0.0, 0.2, … 1.0) were prepared by a metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. Raman spectroscopy, X-ray diffraction, atomic force microscopy (AFM), and electrical characterization techniques were utilized to study the inclusion of SrBi2Ta2O9 (SBT) in the Bi3TiNbO9 (BTN) system. The Raman spectra show frequency shifts and broadening of modes as x increases from 0.0 to 0.4, which are related to the nature of Sr and Bi in the A-sites, and Ta, Ti, and Nb in the B-sites. Smooth surfaces without any cracks or defects were evidenced in each of these films by AFM. These images also indicate that the grain size in the films increases with increasing SBT content in the BTN compound. Electrical measurements show that the remanent polarization (Pr) and the coercive field (Ec) values in the x=0.0 film (2 μC/cm2 and 30 kV/cm, respectively) increase to 12.5 μC/cm2 and 125 kV/cm for x=0.6. A decrease in these parameters was found for higher compositions.

Structural and optical properties of Bi4−xNdxTi3O12 thin films prepared by metal-organic solution deposition

2004 ◽  
Vol 58 (5) ◽  
pp. 813-816 ◽  
Author(s):  
Yuehua Wang ◽  
Guoding Xu ◽  
Xuejin Zhang ◽  
Yan Feng ◽  
Weishi Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Organic Solution ◽  
Structural And Optical Properties ◽  
Solution Deposition ◽  
Metal Organic

Preparation and Electrical Properties of Mn-Co-Ni-O Thin-Film for NTC Thermistors Application

2013 ◽  
Vol 745-746 ◽  
pp. 599-604 ◽  
Author(s):  
Xue Ying Chen ◽  
Lei Wang ◽  
Jin Bao Xu ◽  
Liang Bian ◽  
Bo Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Spinel Structure ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Si Substrates ◽  
Structure Observation ◽  
Metal Organic

Mn-Co-Ni-O (Mn:Co:Ni=1.74:0.72:0.54, MCN) thin films with single cubic spinel structure were prepared on Si substrates by metal organic solution deposition (MOSD) method at different annealing temperatures. The effects of annealing temperature on the phase component, crystalline microstructure, surface morphology and electrical properties of the MCN thin films were studied. According to the results of x-ray diffraction pattern, the MCN thin film annealed at 650 had spinel structure. Observation with field emission scanning electron microscope (FE-SEM) on the MCN thin films showed that the grain size increased with increasing annealing temperature. The resistance measured at room-temperature was 18.143, 12.457, 2.435 and 3.141MΩ for the MCN thin films annealed at 650, 700, 750 and 800, respectively. The values of thermistor constant (B30/85) and activation energy (Ea) were in the range of 3260-4840K and 0.28-0.42eV, respectively.

Dependence of Ferroelectric Properties of SBT Based Capacitors on the Electrode Material

1998 ◽  
Vol 541 ◽  
Author(s):  
S. Tirumala ◽  
S. O. Ryu ◽  
K. B. Lee ◽  
R. Vedula ◽  
S. B. Desu
Keyword(s):  
Thin Films ◽  
Electrode Material ◽  
Electrode Materials ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Si Substrates ◽  
Non Volatile Memory ◽  
Metal Organic ◽  
Sputter Deposited ◽  
Memory Applications

AbstractThe effect of various electrode materials on the ferroelectric properties of SrBi2Ta2O9 (SBT) thin films has been investigated for non-volatile memory applications. Two sets of electrode structures, viz., Pt-Ir based and Pt-Rh based, were sputter deposited in-situ on Si substrates. SBT thin films were deposited on these electrodes using a metal-organic solution deposition technique followed by a post-deposition anneal at 750 °C in oxygen. Structural characterization revealed a polycrystalline nature with predominant perovskite phase in SBT thin films. Ferroelectric properties were studied in capacitor mode by depositing top electrodes, where the top electrode material is identical to that of the bottom electrode. Extensive analysis of the ferroelectric properties signify the important role played by the electrode material in establishing the device applicability is reported in this work.

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