Effect of Acetic Acid/Water Ratio on the Microstructure and Properties of LaNiO3 Thin Films by Metal Organic Solution Deposition

2015 ◽  
Vol 815 ◽  
pp. 89-93
Author(s):  
Yuan Yuan Zhang ◽  
Xiao Dong Tang ◽  
Gen Shui Wang ◽  
Xian Lin Dong
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Acetic Acid ◽  
Ph Value ◽  
Precursor Solution ◽  
Organic Solution ◽  
Solution Deposition ◽  
Ph Values ◽  
Metal Organic ◽  
Acetic Acid Water

Highly (100)-oriented LaNiO3 (LNO) thin films were prepared on p-type Si (100) substrates by metal organic solution deposition (MOSD). The LNO thin films were driven by series precursor solutions with different ratio of acetic acid to deionized water (Raaw) and pH values. The dependences of viscosity, pH value and the thermal property of the gel-derived powders of the precursor solution on Raaw values were systematically investigated. AFM images showed that Raaw can dramatically influence the surface roughness. When Raaw changed from 7:1 to 1:1, the surface roughness decreased from 3.695 nm to 1.488 nm. The resistivities of all the films are less than 2.1×10-3Ω·cm. It shows that the precursor solution has strong effect on the microstructure of the thin films and relatively slight effect on the resistivity.

Structural and optical properties of Bi4−xNdxTi3O12 thin films prepared by metal-organic solution deposition

2004 ◽  
Vol 58 (5) ◽  
pp. 813-816 ◽  
Author(s):  
Yuehua Wang ◽  
Guoding Xu ◽  
Xuejin Zhang ◽  
Yan Feng ◽  
Weishi Tang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Organic Solution ◽  
Structural And Optical Properties ◽  
Solution Deposition ◽  
Metal Organic

Raman Study of SrBi2Ta2O9 Bi3TiNbO9 Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
W. Pérez ◽  
E Ching-Prado ◽  
P.S. Dobal ◽  
A. Reynés-Figueroa ◽  
R.S. Katiyar ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectra ◽  
Layered Structure ◽  
Deposition Method ◽  
Organic Solution ◽  
Solution Deposition ◽  
Si Substrates ◽  
Metal Organic ◽  
Raman Study

AbstractThin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1−x layered structure were prepared for x = 0.0, 0.2, 0.4, 0.6, 0.8, and 1.0, by metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. The micro-Raman studies reveal that the samples are mostly homogeneous. The Raman sprectrum for the film with x = 0 shows bands around 60, 170, 232, 256, 337, 569, and 839 cm−1, which indicate Bi3TiNbO9 (BTN) formation. The prominent band around 839 cm−1, which is an A1g mode of the orthorombic symmetry, corresponds to symmetric stretching of the BO6 octahedra. The frequency of this band is found to shift significantly as SrBi2Ta2O9(SBT) material is added to the BTN compound. In this paper, the evolution of the Raman bands with the inclusion of SBT material are presented and discussed. Finally, The Raman spectra of SBT- BTN films are compared with those obtained in SBT-BTN bulk ceramics.

scholarly journals Modeling the Layer-by-Layer Growth of HKUST-1 Metal-Organic Framework Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1631
Author(s):  
Qiang Zhang ◽  
Yohanes Pramudya ◽  
Wolfgang Wenzel ◽  
Christof Wöll
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Rate ◽  
Layer Growth ◽  
Coarse Grained ◽  
Structural Defects ◽  
Effect Of Temperature ◽  
Layer By Layer ◽  
Reactant Concentration ◽  
Metal Organic

Metal organic frameworks have emerged as an important new class of materials with many applications, such as sensing, gas separation, drug delivery. In many cases, their performance is limited by structural defects, including vacancies and domain boundaries. In the case of MOF thin films, surface roughness can also have a pronounced influence on MOF-based device properties. Presently, there is little systematic knowledge about optimal growth conditions with regard to optimal morphologies for specific applications. In this work, we simulate the layer-by-layer (LbL) growth of the HKUST-1 MOF as a function of temperature and reactant concentration using a coarse-grained model that permits detailed insights into the growth mechanism. This model helps to understand the morphological features of HKUST-1 grown under different conditions and can be used to predict and optimize the temperature for the purpose of controlling the crystal quality and yield. It was found that reactant concentration affects the mass deposition rate, while its effect on the crystallinity of the generated HKUST-1 film is less pronounced. In addition, the effect of temperature on the surface roughness of the film can be divided into three regimes. Temperatures in the range from 10 to 129 °C allow better control of surface roughness and film thickness, while film growth in the range of 129 to 182 °C is characterized by a lower mass deposition rate per cycle and rougher surfaces. Finally, for T larger than 182 °C, the film grows slower, but in a smooth fashion. Furthermore, the potential effect of temperature on the crystallinity of LbL-grown HKUST-1 was quantified. To obtain high crystallinity, the operating temperature should preferably not exceed 57 °C, with an optimum around 28 °C, which agrees with experimental observations.

Effect of Precursor Sol Ageing on Sol-Gel Derived Ruthenium Oxide Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
P. S. Dobal ◽  
R. S. Katiyar ◽  
A. L. M. Cruz ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Ruthenium Oxide ◽  
Precursor Solution ◽  
Silicon Substrates ◽  
Solution Deposition ◽  
Precursor Material ◽  
Afm Analysis

AbstractIn the present work we have optimized the process parameters to yield homogeneous, smooth ruthenium oxide (RuO2) thin films on silicon substrates by a solution deposition technique using RuCl3.×.H2O as the precursor material. Films were annealed in a temperature range of 300°C to 700°C, and it was found that RuO2 crystallizes at a temperature as low as 400°C. The crystallinity of the films improves with increased annealing temperature and the resistivity decreases from 4.86µΩ-m (films annealed at 400°C) to 2.94pµΩ (films annealed at 700°C). Ageing of the precursor solution has a pronounced effect on the measured resistivities of RuO2 thin films. It was found that the measured room temperature resistivities increases from 2.94µΩ-m to 45.7µΩ-m when the precursor sol is aged for aged 60 days. AFM analysis on the aged films shows that the grain size and the surface roughness of the annealed films increase with the ageing of the precursor solution. From XPS analysis we have detected the presence of non-transformed RuCl3 in case of films prepared from aged solution. We propose, that solution ageing inhibits the transformation of RuCl3 to RuO2 during the annealing of the films. The deterioration of the conductivity with solution ageing is thought to be related with the chloride contamination in the annealed films.

GROWTH OF STAPHYLOCOCCUS AUREUS IN ACIDIFIED PASTEURIZED MILK1

1970 ◽  
Vol 33 (11) ◽  
pp. 516-520 ◽  
Author(s):  
T. E. Minor ◽  
E. H. Marth
Keyword(s):  
Staphylococcus Aureus ◽  
Acetic Acid ◽  
Lactic Acid ◽  
Hydrochloric Acid ◽  
Ph Value ◽  
The Other ◽  
Antagonistic Effects ◽  
Pasteurized Milk ◽  
Ph Values ◽  
Effect On Growth

The effect of gradually reducing the pH of pasteurized milk with acetic, citric, hydrochloric, lactic, and phosphoric acids over periods of 4, 8, and 12 hr on growth of Staphylococcus aureus 100 in this substrate was determined. In addition, 1: 1 mixtures of lactic acid and each of the other acids, and of acetic and citric acids were evaluated for their effect on growth of this organism. To achieve a 90% reduction in growth over a 12 hr period, a final pH value of 5.2 was required for acetic, 4.9 for lactic, 4.7 for phosphoric and citric, and 4.6 for hydrochloric acid. A 99% reduction during a 12 hr period was obtained with a final pH value of 5.0 for acetic, 4.6 for lactic, 4.5 for citric, 4.1 for phosphoric, and 4.0 for hydrochloric acid. A pH value of 3.3 was required for a 99.9% reduction with hydrochloric acid, whereas the same effect was produced at a pH value of 4.9 with acetic acid. Correspondingly lower pH values were required to inhibit growth within 8 and 4 hr periods. Mixtures of acids adjusted to pH values at the borderline for growth (12 hr period) exhibited neither synergistic nor antagonistic effects between two acids.

scholarly journals Morphological and Structural Evolution of Chemically Deposited Epitaxially LaNiO3 Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1376
Author(s):  
Mircea Nasui ◽  
Ramona Bianca Sonher ◽  
Ecaterina Ware ◽  
Andrada Daniel ◽  
Traian Petrisor ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Analyses ◽  
Structural Evolution ◽  
Precursor Solution ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Out Of Plane ◽  
Optimal Surface ◽  
Decomposition Behavior ◽  
Surface Morphologies

We report the preparation and characterization of epitaxial LaNiO3 (LNO) thin films by chemical solution deposition method using lanthanum and nickel acetylacetonates as starting reagents dissolved in propionic acid. In order to obtain further information regarding the decomposition behavior of the film, the precursor solution was dried to obtain the precursor powder, which was investigated by thermal analyses and X-ray diffraction measurements (XRD). The LNO perovskite thin films were deposited by spin coating on SrTiO3(100) single crystal substrates. A detailed study with different crystallization temperatures (600–900 °C) at two different heating ramps (5 and 10 °C/min) was performed. Oriented LaNiO3 thin films with good out-of-plane textures were obtained with optimal surface morphologies.

Al Doped Ta2O5 Thin Films for Microelectronic Applications

2000 ◽  
Vol 654 ◽  
Author(s):  
P. C Joshi ◽  
M. W. Cole ◽  
C. W. Hubbard ◽  
E. Ngo
Keyword(s):  
Thin Films ◽  
Precursor Solution ◽  
Electrical Measurements ◽  
Cross Sectional ◽  
Solution Deposition ◽  
Atomic Force ◽  
The Stability ◽  
Insulating Properties ◽  
Post Deposition

AbstractIn this paper, we report on the fabrication and characterization of pure and Al doped Ta2O5 thin films fabricated by metalorganic solution deposition (MOSD) technique. The pure and Aldoped Ta2O5 thin films were fabricated by spin-coating technique using room temperature processed carboxylate-alkoxide precursor solution. The structure of the films was analyzed by xray diffraction (XRD). The surface and cross-sectional morphology of the films were examined by field emission scanning electron microscope (FESEM) and atomic force microscope (AFM). The electrical measurements were conducted on films in MIM configuration using Pt as the top and bottom electrode. The effects of Al concentration and the post-deposition annealing temperature on the structural, dielectric, and insulating properties were analyzed. The effects of the applied bias and the measurement temperature on the dielectric and insulating properties were also analyzed to establish the stability and reliability of Al doped Ta2O5 thin films.

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