Highly conductive boron doped micro/nanocrystalline silicon thin films deposited by VHF-PECVD for solar cell applications

2015 ◽  
Vol 643 ◽  
pp. 94-99 ◽  
Author(s):  
Sucheta Juneja ◽  
S. Sudhakar ◽  
Jhuma Gope ◽  
Kalpana Lodhi ◽  
Mansi Sharma ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Boron Doped

Nanocrystalline silicon thin films prepared by RF sputtering at low temperature and heterojunction solar cell

2004 ◽  
Vol 58 (30) ◽  
pp. 3963-3966 ◽  
Author(s):  
Z.X. Zhao ◽  
R.Q. Cui ◽  
F.Y. Meng ◽  
B.C. Zhao ◽  
H.C. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Low Temperature ◽  
Rf Sputtering ◽  
Nanocrystalline Silicon ◽  
Heterojunction Solar Cell ◽  
Silicon Thin Films

Boron-Doped Nanocrystalline Silicon Thin Films Prepared by PECVD

2012 ◽  
Vol 503 ◽  
pp. 386-390
Author(s):  
Xiu Qin Wang ◽  
Jian Ning Ding ◽  
Ning Yi Yuan ◽  
Shu Bo Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Volume Fraction ◽  
Chemical Vapour ◽  
Nanocrystalline Silicon ◽  
Process Conditions ◽  
Rf Power ◽  
Silicon Thin Films ◽  
Boron Doped

Boron-doped nanocrystalline silicon thin films(p-nc-Si:H) were deposited on glass substrates by plasma enhanced chemical vapour deposition (PECVD) using SiH4/ H2/ B2H6. The effects of substrate temperature, rf power and diborane flow on the microstructure, the electrical properties of nanocrystalline silicon thin films have been investigated. The results show that, increasing substrate temperature, rf power and B2H6flow can improve the conductivity of P-Si thin film. However, exceeding one value, they are not advantageous to improve the conductivity due to the decrystallization of films. Hence, appropriate process conditions are crucial for the preparation of high quality p layer. crystalline volume fraction (Xc) 26.2 %, mean grain size (d) 3.5nm and conductivity 0.374S/cm, p-nc-Si:H thin film was deposited.

scholarly journals Boron-doped nanocrystalline silicon thin films for solar cells

2011 ◽  
Vol 257 (21) ◽  
pp. 8901-8905 ◽  
Author(s):  
E. Fathi ◽  
Y. Vygranenko ◽  
M. Vieira ◽  
A. Sazonov
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films ◽  
Boron Doped

Experimental Investigation of the Impact of Annealing on Resistivity of Boron-Doped Hydrogenated Nanocrystalline Silicon Thin Films

2010 ◽  
Vol 29-32 ◽  
pp. 1883-1887
Author(s):  
Hai Bin Pan ◽  
Yuan Tian ◽  
Guang Gui Cheng ◽  
Li Qiang Guo
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Force Microscopy ◽  
Silicon Thin Films ◽  
Atomic Force ◽  
Boron Doped ◽  
The Impact ◽  
The Relationship

Boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by plasma enhanced chemical vapor deposition (PECVD). Microstructures of these films were characterized and analyzed by Raman spectrum and atomic force microscopy (AFM). Thickness and resistivity of these films was measured by high-resolution profilometer and four-point probe respectively. The impact of annealing on boron-doped nc-Si:H thin films’ resistivity and the relationship between resistivity and microstructure were investigated. The results show that annealing and the annealing temperature have great impact on resistivity of nc-Si:H thin films as a result of microstructures changing after annealing. Resistivity of nc-Si:H thin films decreases after annealing, but it rises with the increasing annealing temperature in the range of 250°C to 400°C.

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