Effects of boron incorporation on the structural, optical and electrical properties of sol–gel-derived ZrO2 gate dielectrics

2015 ◽  
Vol 649 ◽  
pp. 1273-1279 ◽  
Author(s):  
D.Q. Xiao ◽  
G. He ◽  
P. Jin ◽  
J. Gao ◽  
J.W. Zhang ◽  
...  
2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.


Author(s):  
Anusuya Sahoo ◽  
A R Jayakrishnan ◽  
K Kamakshi ◽  
J P B Silva ◽  
K C Sekhar ◽  
...  

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