Thermal and electron transport properties of Ce2Ni3Ge5 and Ce3NiGe2: Example of Kondo behavior in the presence of the crystalline field effect

2016 ◽  
Vol 689 ◽  
pp. 1059-1067 ◽  
Author(s):  
M. Falkowski
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Field Effect ◽  
Crystalline Field ◽  
Electron Transport Properties

Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs

2011 ◽  
Vol 679-680 ◽  
pp. 678-681 ◽  
Author(s):  
Harsh Naik ◽  
T. Paul Chow
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Gate Oxides ◽  
Electron Transport Properties

The effect of using two different polytypes, 4H-SiC and 6H-SiC, on the performance of (0001) SiC MOSFETs has been studied. 4H-SiC and 6H-SiC MOSFETs have been fabricated with deposited gate oxides followed by oxidation in dry O2 or NO. Device parameters, particularly field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. We have also compared the mobility-limiting mechanisms of (0001) 4H and 6H-SiC MOSFETs and found that inversion mobility can be further improved in 4H-SiC, but not 6H-SiC.

Electron Transport Properties in Photo and Supersonic Wave Irradiated C60Fullerene Nano-Whisker Field-Effect Transistors

2010 ◽  
Vol 49 (4) ◽  
pp. 04DN12 ◽  
Author(s):  
Tatsuya Doi ◽  
Kyouhei Koyama ◽  
Yasuto Chiba ◽  
Hajime Tsuji ◽  
Misaki Ueno ◽  
...  
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electron Transport Properties

High-Temperature Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistors

2000 ◽  
Vol 639 ◽  
Author(s):  
Narihiko Maeda ◽  
Tadashi Saitoh ◽  
Kotaro Tsubaki ◽  
Toshio Nishida ◽  
Naoki Kobayashi
Keyword(s):  
High Temperature ◽  
Electron Transport ◽  
Temperature Dependence ◽  
Transport Properties ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Electron Transport Properties ◽  
Gan Heterostructure

Electron transport properties in the Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) have been examined from room temperature up to 400°C. The temperature dependencies of the two-dimensional electron gas (2DEG) mobility have been systematically measured for the samples with different 2DEG densities. The 2DEG mobility has decreased with increasing the temperature, however, its decrease ratio has been no longer large above 300°C. Moreover, the 2DEG mobility has found to be less dependent on the 2DEG density at higher temperatures. These observed features indicate that the 2DEG mobility above room temperature is limited by longitudinal optical (LO) phonon scattering, as is expected by theoretical prediction. The observed 2DEG mobilities at 400°C were as high as from 100 to 120 cm2/Vs, directly providing the evidence for suitability of the HFET of this material system for high-temperature applications. The temperature dependence of the transconductance (gm) of a HFET device has also been examined up to 400°C. It has been revealed that the temperature dependence of gm has basically the same features as those of the 2DEG mobility in the corresponding temperature region.

Magnetic and electron transport properties of Co2Si nanomagnets

2021 ◽  
Vol 5 (2) ◽  
Author(s):  
Balamurugan Balasubramanian ◽  
Tom A. George ◽  
Priyanka Manchanda ◽  
Rabindra Pahari ◽  
Ahsan Ullah ◽  
...  
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Electron Transport Properties

Printable Single-Unit-Cell-Thick Transparent Zinc-Doped Indium Oxides with Efficient Electron Transport Properties

ACS Nano ◽  
2021 ◽  
Author(s):  
Azmira Jannat ◽  
Nitu Syed ◽  
Kai Xu ◽  
Md. Ataur Rahman ◽  
Md. Mehdi Masud Talukder ◽  
...  
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Single Unit ◽  
Unit Cell ◽  
Electron Transport Properties ◽  
Indium Oxides

In-situ photoconductivity measurement of imidazole in optical fiber break-junctions

2021 ◽  
Author(s):  
Zhikai Zhao ◽  
Chenyang Guo ◽  
Lifa Ni ◽  
Xueyan Zhao ◽  
Surong Zhang ◽  
...  
Keyword(s):  
Electron Transport ◽  
Optical Fiber ◽  
Transport Properties ◽  
Molecular Junctions ◽  
Break Junction ◽  
Break Junctions ◽  
Fiber Break ◽  
Electron Transport Properties ◽  
Photoconductivity Measurement

We develop a method based on the mechanically controllable break junction technique to investigate the electron transport properties of single molecular junctions upon fiber waveguided light. In our strategy, a...

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