Comparison of Inversion Electron Transport Properties of (0001) 4H and 6H-SiC MOSFETs

The effect of using two different polytypes, 4H-SiC and 6H-SiC, on the performance of (0001) SiC MOSFETs has been studied. 4H-SiC and 6H-SiC MOSFETs have been fabricated with deposited gate oxides followed by oxidation in dry O2 or NO. Device parameters, particularly field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. We have also compared the mobility-limiting mechanisms of (0001) 4H and 6H-SiC MOSFETs and found that inversion mobility can be further improved in 4H-SiC, but not 6H-SiC.

Electronic Transport in Organic Ferroelectric Gate Field-Effect Transistors with ZnO Channel

MRS Proceedings ◽

10.1557/opl.2012.900 ◽

2012 ◽

Vol 1430 ◽

Cited By ~ 1

Author(s):

Hiroaki Yamada ◽

Takeshi Yoshimura ◽

Norifumi Fujimura

Keyword(s):

Hall Effect ◽

Transport Properties ◽

Carrier Concentration ◽

Electronic Transport ◽

Hall Mobility ◽

Field Effect ◽

Hall Effect Measurement ◽

Field Effect Mobility ◽

Channel Thickness

ABSTRACTThe electronic transport properties of the organic ferroelectric gate field-effect transistors (FeFETs) with the ZnO channel were investigated. The FeFETs with the channel thickness below 100 nm show nonvolatile operation and the on/off ratio of 105. The field-effect mobility decreased with decreasing the channel thickness. From the Hall-effect measurement, it was found that the Hall mobility increases and the carrier concentration decreases after the deposition of the organic ferroelectric gate. From these results, the effect of the ferroelectric polarization on the electronic transport in the FeFETs was discussed.

Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.126542 ◽

2000 ◽

Vol 76 (21) ◽

pp. 3118-3120 ◽

Cited By ~ 42

Author(s):

Narihiko Maeda ◽

Tadashi Saitoh ◽

Kotaro Tsubaki ◽

Toshio Nishida ◽

Naoki Kobayashi

Keyword(s):

Electron Transport ◽

Transport Properties ◽

Field Effect ◽

Double Heterostructure ◽

Heterostructure Field Effect Transistors ◽

Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) Oriented Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.785 ◽

2009 ◽

Vol 615-617 ◽

pp. 785-788 ◽

Cited By ~ 11

Author(s):

Harsh Naik ◽

K. Tang ◽

T. Marron ◽

T. Paul Chow ◽

Jody Fronheiser

Keyword(s):

Low Temperature ◽

Carrier Concentration ◽

Threshold Voltage ◽

Hall Mobility ◽

Field Effect ◽

Gate Oxide ◽

Subthreshold Slope ◽

Field Effect Mobility

The effect of using different orientations of 4H-SiC substrates on the performance of 4H-SiC MOSFETs has been evaluated. Three sets of samples with (0001), (000-1) and (11-20) oriented SiC substrates were used to fabricate the MOSFETs, with a gate oxide process consisting of a low- temperature deposited oxide followed by NO anneal at 1175°C for 2hrs. Various device parameters, particularly threshold voltage, subthreshold slope, field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted. Temperature characterization up to 225°C was also performed.

Effect of Graphite Cap for Implant Activation on Inversion Channel Mobility in 4H-SiC MOSFETs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.773 ◽

2009 ◽

Vol 615-617 ◽

pp. 773-776 ◽

Cited By ~ 15

Author(s):

Harsh Naik ◽

K. Tang ◽

T. Paul Chow

Keyword(s):

Low Temperature ◽

Carrier Concentration ◽

Threshold Voltage ◽

Hall Mobility ◽

Field Effect ◽

Gate Oxide ◽

Subthreshold Slope ◽

Field Effect Mobility ◽

Channel Mobility ◽

Inversion Channel

The effects of using a graphite capping layer during implant activation anneal on the performance of 4H-SiC MOSFETs has been evaluated. Two sets of samples, one with the graphite cap and another without, with a gate oxide process consisting of a low-temperature deposited oxide followed by NO anneal at 1175°C for 2hrs were used for characterization. Various device parameters, particularly threshold voltage, subthreshold slope, field-effect mobility, inversion sheet carrier concentration and Hall mobility have been extracted for the two processes.

Electron Transport Properties of WS2 Field-Effect Transistors Modulated by Electron Beam Irradiation Under Gate Voltage

IEEE Electron Device Letters ◽

10.1109/led.2019.2926400 ◽

2019 ◽

Vol 40 (9) ◽

pp. 1542-1545

Author(s):

Jieyuan Liang ◽

Lijie Zhang ◽

Xiaoxiao Li ◽

Baojun Pan ◽

Tingyan Luo ◽

...

Keyword(s):

Electron Beam ◽

Electron Transport ◽

Transport Properties ◽

Gate Voltage ◽

Field Effect ◽

Electron Beam Irradiation ◽

Beam Irradiation ◽

Electron Transport Properties in Photo and Supersonic Wave Irradiated C60Fullerene Nano-Whisker Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dn12 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DN12 ◽

Cited By ~ 6

Author(s):

Tatsuya Doi ◽

Kyouhei Koyama ◽

Yasuto Chiba ◽

Hajime Tsuji ◽

Misaki Ueno ◽

...

Keyword(s):

Electron Transport ◽

Transport Properties ◽

Field Effect ◽

High-Temperature Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistors

MRS Proceedings ◽

10.1557/proc-639-g11.14 ◽

2000 ◽

Vol 639 ◽

Author(s):

Narihiko Maeda ◽

Tadashi Saitoh ◽

Kotaro Tsubaki ◽

Toshio Nishida ◽

Naoki Kobayashi

Keyword(s):

High Temperature ◽

Electron Transport ◽

Temperature Dependence ◽

Transport Properties ◽

Field Effect ◽

Room Temperature ◽

Heterostructure Field Effect Transistors ◽

Electron Transport Properties ◽

Gan Heterostructure

Electron transport properties in the Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) have been examined from room temperature up to 400°C. The temperature dependencies of the two-dimensional electron gas (2DEG) mobility have been systematically measured for the samples with different 2DEG densities. The 2DEG mobility has decreased with increasing the temperature, however, its decrease ratio has been no longer large above 300°C. Moreover, the 2DEG mobility has found to be less dependent on the 2DEG density at higher temperatures. These observed features indicate that the 2DEG mobility above room temperature is limited by longitudinal optical (LO) phonon scattering, as is expected by theoretical prediction. The observed 2DEG mobilities at 400°C were as high as from 100 to 120 cm2/Vs, directly providing the evidence for suitability of the HFET of this material system for high-temperature applications. The temperature dependence of the transconductance (gm) of a HFET device has also been examined up to 400°C. It has been revealed that the temperature dependence of gm has basically the same features as those of the 2DEG mobility in the corresponding temperature region.

EFFECT OF GATE OXIDE PROCESSES ON 4H-SiC MOSFETs ON (000-1) ORIENTED SUBSTRATE

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156409006217 ◽

2009 ◽

Vol 19 (01) ◽

pp. 161-166

Author(s):

HARSH NAIK ◽

KE TANG ◽

T. PAUL CHOW

Keyword(s):

Low Temperature ◽

Carrier Concentration ◽

Threshold Voltage ◽

Hall Mobility ◽

Field Effect ◽

Gate Oxide ◽

Field Effect Mobility ◽

Plasma Enhanced Cvd ◽

And Inversion

We have fabricated, characterized and compared the performance of lateral n -channel 4 H - SiC MOSFETs on (000-1) oriented substrates, using two different gate oxide processes. These processes include low-temperature deposited oxide and plasma-enhanced CVD oxide. Different MOSFET parameters, such as field-effect mobility, threshold voltage, Hall mobility and inversion sheet carrier concentration has been compared for the two processes.