Fabrication and characterization of Co-doped ZnO nanodiscs for selective TEA sensor applications with high response, high selectivity and ppb-level detection limit

2021 ◽  
pp. 160170
Author(s):  
Yaru Fan ◽  
Yanyan Xu ◽  
Yuxuan Wang ◽  
Yaqiu Sun
2013 ◽  
Vol 48 (11) ◽  
pp. 4596-4600 ◽  
Author(s):  
Vinod Kumar ◽  
Neetu Singh ◽  
Avinashi Kapoor ◽  
Odireleng M. Ntwaeaborwa ◽  
Hendrik C. Swart

Author(s):  
K. P. W. Dissanayake ◽  
H. A. Abdul-Rashid ◽  
A. Safaei ◽  
A. Oresegun ◽  
N. Shahrizan ◽  
...  

2019 ◽  
Vol 474 ◽  
pp. 563-569 ◽  
Author(s):  
V. Manikandan ◽  
Florin Tudorache ◽  
Iulian Petrila ◽  
R.S. Mane ◽  
V. Kuncser ◽  
...  

Author(s):  
Mary Gopanchuk ◽  
Mohamed Arabi ◽  
N. Nelson-Fitzpatrick ◽  
Majed S. Al-Ghamdi ◽  
Eihab Abdel-Rahman ◽  
...  

This paper reports on the design, fabrication, and characterization of non-interdigitated comb drive actuators in Silicon-on-Insulator (SOI) wafers, using a single mask surface microma-chining process. The response of the actuator is analyzed numerically and experimentally. The results show at the fundamental frequency; it behaves as a longitudinal comb drive actuator. At a higher frequency, it exhibits a high-quality factor which is appropriate for sensor applications.


2008 ◽  
Vol 1071 ◽  
Author(s):  
Koji Aizawa

AbstractCharacterization of 700-nm-thick poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]/TiO2/Al-doped ZnO (AZO) structures on a glass substrate were investigated. In this study, the sputtered TiO2 films as insulator were used for the reduction of leakage current. The leakage current density of the fabricated Pt/P(VDF/TrFE)/AZO and Pt/P(VDF/TrFE)/170-nm-thick TiO2/AZO structures were approximately 8.7 and 3.9 nA/cm2 at the applied voltage of 10 V, respectively. In the polarization vs. voltage characteristics, the fabricated Pt/P(VDF/TrFE)/TiO2/AZO structures showed hysteresis loops caused by ferroelectric polarization. The remnant polarization (2Pr) and coercive voltage (2Vc) measured from a saturated hysteresis loop at the frequency of 50 Hz were approximately 12 μC/cm2 and 105 V, respectively. These results suggest that the insertion of TiO2 film is available for reducing the gate leakage current without changing the ferroelectric properties.


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