The influence of sintering temperature on the mechanical evolution of Al2TiO5 flexible ceramics based on the acoustic emission

2021 ◽  
pp. 163004
Author(s):  
Qingliang Shan ◽  
Changrong Chen ◽  
Qiankun Xu ◽  
Yudong Xue ◽  
Qian Ma ◽  
...  
Author(s):  
Gareth Thomas

Silicon nitride and silicon nitride based-ceramics are now well known for their potential as hightemperature structural materials, e.g. in engines. However, as is the case for many ceramics, in order to produce a dense product, sintering additives are utilized which allow liquid-phase sintering to occur; but upon cooling from the sintering temperature residual intergranular phases are formed which can be deleterious to high-temperature strength and oxidation resistance, especially if these phases are nonviscous glasses. Many oxide sintering additives have been utilized in processing attempts world-wide to produce dense creep resistant components using Si3N4 but the problem of controlling intergranular phases requires an understanding of the glass forming and subsequent glass-crystalline transformations that can occur at the grain boundaries.


2001 ◽  
Vol 148 (4) ◽  
pp. 169-177 ◽  
Author(s):  
R.P. Dalton ◽  
P. Cawley ◽  
M.J. Lowe
Keyword(s):  

2020 ◽  
Vol 92 (2) ◽  
pp. 20401
Author(s):  
Evgeniy Dul'kin ◽  
Michael Roth

In relaxor (1-x)SrTiO3-xBiFeO3 ferroelectrics ceramics (x = 0.2, 0.3 and 0.4) both intermediate temperatures and Burns temperatures were successfully detected and their behavior were investigated in dependence on an external bias field using an acoustic emission. All these temperatures exhibit a non-trivial behavior, i.e. attain the minima at some threshold fields as a bias field enhances. It is established that the threshold fields decrease as x increases in (1-x)SrTiO3-xBiFeO3, as it previously observed in (1-x)SrTiO3-xBaTiO3 (E. Dul'kin, J. Zhai, M. Roth, Phys. Status Solidi B 252, 2079 (2015)). Based on the data of the threshold fields the mechanisms of arising of random electric fields are discussed and their strengths are compared in both these relaxor ferroelectrics.


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