Temperature dependence of electrical and optical properties in Eu3+ doped Pb(Mg1/3Nb2/3)O3–PbZrO3–PbTiO3 ferroelectric ceramics

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.

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Positive Temperature Coefficient of Avalanche Breakdown Observed in a-Plane 6H-SiC Photodiodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.865 ◽

2009 ◽

Vol 615-617 ◽

pp. 865-868

Author(s):

Stanislav I. Soloviev ◽

Alexey V. Vert ◽

Jody Fronheiser ◽

Peter M. Sandvik

Keyword(s):

Optical Properties ◽

Temperature Dependence ◽

Temperature Coefficient ◽

Breakdown Voltage ◽

Avalanche Photodiodes ◽

Positive Temperature Coefficient ◽

Avalanche Breakdown ◽

Positive Temperature ◽

Electrical And Optical Properties ◽

Positive Angle

In this work, avalanche photodiodes (APDs) were fabricated using a-plane 6H- and 4H-SiC materials to investigate their electrical and optical properties. Temperature dependence of avalanche breakdown was measured. The diode structures were fabricated with positive angle beveling and oxide passivation to ensure a uniform breakdown across the device area. Despite the apparent presence of micro-plasmas, we observed that the breakdown voltage of a-plane 6H-SiC APDs increased with temperature suggesting a positive temperature coefficient.

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The temperature dependence of electrical and optical properties in InAs/GaAs and GaAs/InAs/AlAs self-assembled quantum dots

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/7/015 ◽

2006 ◽

Vol 21 (7) ◽

pp. 912-917 ◽

Cited By ~ 1

Author(s):

A J Chiquito ◽

M G de Souza ◽

I Camps ◽

Y Galvão Gobato

Keyword(s):

Quantum Dots ◽

Optical Properties ◽

Temperature Dependence ◽

Electrical And Optical Properties ◽

Self Assembled

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Investigation on Dielectric and Optical Properties of Ba1-xCaxZr0.1Ti0.9O3 (x = 0.150) Ferroelectric Ceramics

Journal of Mountain Research ◽

10.51220/jmr.v16i2.34 ◽

2021 ◽

Vol 16 (2) ◽

Author(s):

Don Biswas ◽

Surendra Singh ◽

Prashant Thapliyal ◽

Vishal Rohilla ◽

G S Kathait ◽

...

Keyword(s):

Optical Properties ◽

Band Gap ◽

Room Temperature ◽

Solid State Reaction Method ◽

Ferroelectric Ceramics ◽

Electrical And Optical Properties ◽

Reflectance Measurement ◽

Tauc Plot ◽

Dielectric And Optical Properties ◽

Ferroelectric Perovskite

Pellet samples of (Ba1-xCaxZr1-yTiy)O3 (x = 0.150, y = 0.90) were prepared using the solid-state reaction method following double sintering. The electrical and optical properties of (Ba1-xCaxZr1-yTiy)O3 (x = 0.150, y = 0.90) ceramics were studied. For Ba0.85Ca0.15Zr0. 1Ti0.9)O3 ferroelectric perovskite ceramics, the dielectric and structural properties were explored. The prepared composition of BCZT ceramics were calcined at 1100 oC. The sintering temperature was 1300 oC. Dielectric properties were observed from room temperature (RT) to 150 oC, at 1 MHz. The powder of the sintered samples has been taken for reflectance measurement at UV-Vis range. From the observed tauc plot, the band-gap is calculated. The measured band- gap is 3.19 eV.

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