Design of “turn-ON and turn-OFF” fluorescence switching based photonic logic gates through multiple input-output models by MoS2 quantum dots

2019 ◽  
Vol 540 ◽  
pp. 258-264 ◽  
Author(s):  
Hariharan Swaminathan ◽  
Karthikeyan Balasurbamanian
Keyword(s):  
Quantum Dots ◽  
Logic Gates ◽  
Input Output ◽  
Turn On ◽  
Multiple Input ◽  
Fluorescence Switching

Retracted Article: Upconversion luminescent logic gates and turn-on sensing of glutathione based on two-photon excited quantum dots conjugated with dopamine

2014 ◽  
Vol 50 (94) ◽  
pp. 14847-14850 ◽  
Author(s):  
Rijun Gui ◽  
Hui Jin ◽  
Xifeng Liu ◽  
Zonghua Wang ◽  
Feifei Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Logic Gates ◽  
Two Photon ◽  
Turn On ◽  
Retracted Article

This article reported the two-photon excited quantum dots-based novel upconversion luminescent logic gates for turn-on sensing of glutathione.

scholarly journals Retraction: Upconversion luminescent logic gates and turn-on sensing of glutathione based on two-photon excited quantum dots conjugated with dopamine

2020 ◽  
Vol 56 (89) ◽  
pp. 13888-13888
Author(s):  
Richard Kelly
Keyword(s):  
Quantum Dots ◽  
Logic Gates ◽  
Two Photon ◽  
Turn On

Retraction of ‘Upconversion luminescent logic gates and turn-on sensing of glutathione based on two-photon excited quantum dots conjugated with dopamine’ by Rijun Gui et al., Chem. Commun., 2014, 50, 14847–14850, DOI: 10.1039/C4CC06181K.

General Theory for Multiple Input-Output Perturbations in Complex Molecular Systems. 1. Linear QSPR Electronegativity Models in Physical, Organic, and Medicinal Chemistry

2013 ◽  
Vol 13 (14) ◽  
pp. 1713-1741 ◽  
Author(s):  
Humberto Gonzalez-Diaz ◽  
Sonia Arrasate ◽  
Asier Gomez-SanJuan ◽  
Nuria Sotomayor ◽  
Esther Lete ◽  
...  
Keyword(s):  
General Theory ◽  
Medicinal Chemistry ◽  
Input Output ◽  
Molecular Systems ◽  
Physical Organic ◽  
Multiple Input

scholarly journals Design and Analysis of Logic Gates using GaN based Double Gate MOSFET (DG-MOS)

2018 ◽  
Vol 17 (1) ◽  
Author(s):  
Md Ibnul Bin Kader Arnub ◽  
M Tanseer Ali
Keyword(s):  
Field Effect Transistors ◽  
Logic Gates ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Channel One ◽  
Turn On ◽  
Double Gate Mosfet ◽  
Different Types

The double gate MOSFET, where two gates are fabricated along the length of the channel one after another. Design of logic gates is one of the most eminent application of Double Gate MOSFET. Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are shown to be promising for digital logic applications. This paper describes the design and analysis of different types of logic gates using GaN based DG-MOSFET. The gate length (LG) is kept constant at 10.6 nm. The gate voltage varies from 0 to 1 V for the device switching from turn OFF to turn ON-state. For the device with HfO2 as gate oxide, the ON-state current (ION) and OFF-state current (IOFF) are found 8.11×10-3 and 6.38605×10-9A/μm respectively. The leakage current is low for the device with HfO2 as compared to that for the device with ZrO2. The subthreshold swing (SS) is 68.7408 mV/dec for the device with HfO2.

Sign in / Sign up

Export Citation Format

Share Document