Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (111) by electron–cyclotron resonance plasma-assisted molecular-beam epitaxy
2007 ◽
Vol 301-302
◽
pp. 504-507
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2002 ◽
Vol 89
(1-3)
◽
pp. 296-302
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1990 ◽
Vol 61
(9)
◽
pp. 2407-2411
◽
1995 ◽
Vol 24
(9)
◽
pp. 1201-1206
◽
1998 ◽
Vol 37
(Part 2, No. 6B)
◽
pp. L700-L702
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2001 ◽
Vol 19
(5)
◽
pp. 1803
1994 ◽
Vol 12
(2)
◽
pp. 1232
◽
2003 ◽
Vol 0
(7)
◽
pp. 2802-2805
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