Lasing Action on Whispering Gallery Mode of Self-Organized GaN Hexagonal Microdisk Crystal Fabricated by RF-Plasma-Assisted Molecular Beam Epitaxy

2011 ◽  
Vol 47 (12) ◽  
pp. 1565-1570 ◽  
Author(s):  
Tetsuya Kouno ◽  
Katsumi Kishino ◽  
Masaru Sakai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Whispering Gallery Mode ◽  
Rf Plasma ◽  
Whispering Gallery ◽  
Self Organized

Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates

2013 ◽  
Vol 380 ◽  
pp. 14-17 ◽  
Author(s):  
D.F. Storm ◽  
D.A. Deen ◽  
D.S. Katzer ◽  
D.J. Meyer ◽  
S.C. Binari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rf Plasma

Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2524-2528 ◽  
Author(s):  
Shinji Kuroda ◽  
Yoshikazu Terai ◽  
Kôki Takita ◽  
Tsuyoshi Okuno ◽  
Yasuaki Masumoto
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized ◽  
Excitonic Luminescence

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

2005 ◽  
Vol 278 (1-4) ◽  
pp. 443-448 ◽  
Author(s):  
A. Feduniewicz ◽  
C. Skierbiszewski ◽  
M. Siekacz ◽  
Z.R. Wasilewski ◽  
I. Sproule ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Mg Doping

scholarly journals Growth of Catalyst-Free Hexagonal Pyramid-Like InN Nanocolumns on Nitrided Si(111) Substrates via Radio-Frequency Metal–Organic Molecular Beam Epitaxy

Crystals ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 291 ◽  
Author(s):  
Wei-Chun Chen ◽  
Tung-Yuan Yu ◽  
Fang-I Lai ◽  
Hung-Pin Chen ◽  
Yu-Wei Lin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Chemical Properties ◽  
Rf Plasma ◽  
Transmission Electron Microscopy Analysis ◽  
Organic Precursor ◽  
Metal Organic ◽  
Hexagonal Pyramid

Hexagonal pyramid-like InN nanocolumns were grown on Si(111) substrates via radio-frequency (RF) metal–organic molecular beam epitaxy (MOMBE) together with a substrate nitridation process. The metal–organic precursor served as a group-III source for the growth of InN nanocolumns. The nitridation of Si(111) under flowing N2 RF plasma and the MOMBE growth of InN nanocolumns on the nitrided Si(111) substrates were investigated along with the effects of growth temperature on the structural, optical, and chemical properties of the InN nanocolumns. Based on X-ray diffraction analysis, highly <0001>-oriented, hexagonal InN nanocolumns were grown on the nitride Si(111) substrates. To evaluate the alignment of arrays, the deviation angles of the InN nanocolumns were measured using scanning electron microscopy. Transmission electron microscopy analysis indicated that the InN nanocolumns were single-phase wurtzite crystals having preferred orientations along the c-axis. Raman spectroscopy confirmed the hexagonal structures of the deposited InN nanocolumns.

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