HCl-H2SO4-H2O solution etching behavior of InAs (1 0 0) surface

2020 ◽  
Vol 547 ◽  
pp. 125800
Author(s):  
Guiying Shen ◽  
Youwen Zhao ◽  
Jing Sun ◽  
Jingming Liu ◽  
Hui Xie ◽  
...  
Keyword(s):  
Etching Behavior

Wet Etching Behavior of Poly-Si in TMAH Solution

2012 ◽  
Vol 195 ◽  
pp. 42-45 ◽  
Author(s):  
Hiroaki Takahashi ◽  
Masayuki Otsuji ◽  
Jim Snow ◽  
Farid Sebaai ◽  
Kenichiro Arai ◽  
...  
Keyword(s):  
Wet Etching ◽  
Tetramethylammonium Hydroxide ◽  
Process Performance ◽  
Etching Behavior ◽  
Dummy Gate ◽  
Tmah Solution

Since Tetramethylammonium Hydroxide (TMAH) became widely used as a silicon etchant, e.g. the dummy gate removal for gate-last approach (RMG) [1, or Si fin formation on FinFET [, some careful preparations and optimizations have required implementation. These adaptations have involved not only chemical-related issues, but also hardware-related in order to satisfy the necessary process performance.

Passivation role of sulfur and etching behavior in plasma etched TiW using SF6 and BCl3 gases

1997 ◽  
Vol 33 (1-4) ◽  
pp. 223-229 ◽  
Author(s):  
Il-Sup Jin ◽  
Hyung-Ho Park ◽  
Kwang-Ho Kwon ◽  
Chang-Il Kim
Keyword(s):  
Etching Behavior

Effect of rare-earth elements on the plasma etching behavior of the RE–Si–Al–O glasses

2012 ◽  
Vol 358 (5) ◽  
pp. 898-902 ◽  
Author(s):  
Jungki Lee ◽  
Dongsun Kim ◽  
Sungmin Lee ◽  
Hyungsun Kim
Keyword(s):  
Rare Earth ◽  
Rare Earth Elements ◽  
Plasma Etching ◽  
Etching Behavior

scholarly journals Structural and Fluorine Plasma Etching Behavior of Sputter-Deposition Yttrium Fluoride Film

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 936 ◽  
Author(s):  
Wei-Kai Wang ◽  
Yu-Xiu Lin ◽  
Yi-Jie Xu
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Heating Temperature ◽  
Working Pressure ◽  
Etching Depth ◽  
Yttrium Fluoride ◽  
X Ray ◽  
Substrate Heating ◽  
Etching Behavior ◽  
Etched Surface

Yttrium fluoride (YF3) films were grown on sapphire substrate by a radio frequency magnetron using a commercial ceramic target in a vacuum chamber. The structure, composition, and plasma etching behavior of the films were systematically investigated. The YF3 film was deposited at a working pressure of 5 mTorr and an RF power of 150 W. The substrate-heating temperature was increased from 400 to 700 °C in increments of 100 °C. High-resolution transmission electron microscopy (HRTEM) and X-ray diffraction results confirmed an orthorhombic YF3 structure was obtained at a substrate temperature of 700 °C for 2 h. X-ray photoelectron spectroscopy revealed a strongly fluorinated bond (Y–F bond) on the etched surface of the YF3 films. HRTEM analysis also revealed that the YF3 films became yttrium-oxyfluorinated after exposure to fluorocarbon plasma. The etching depth was three times lower on YF3 film than on Al2O3 plate. These results showed that the YF3 films have excellent erosion resistance properties compared to Al2O3 plates.

Effects of electrodeposited Zn nuclei on tunnel etching behavior of aluminum foil

2015 ◽  
Vol 91 ◽  
pp. 213-219 ◽  
Author(s):  
Ning Peng ◽  
Yedong He ◽  
Hongzhou Song ◽  
Xiaofei Yang ◽  
Xiaoyu Cai
Keyword(s):  
Aluminum Foil ◽  
Etching Behavior

Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and Morphology

2018 ◽  
Vol 282 ◽  
pp. 94-98
Author(s):  
Graniel Harne A. Abrenica ◽  
Mikhail V. Lebedev ◽  
Hy Le ◽  
Andreas Hajduk ◽  
Mathias Fingerle ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Surface Chemistry ◽  
Photoelectron Spectroscopy ◽  
Chemical Etching ◽  
Electrochemical Etching ◽  
Spectroscopic Techniques ◽  
X Ray ◽  
Etching Behavior ◽  
Effect Of Oxygen

We report on the (electro) chemical etching behavior, surface morphology and composition of n-type Ge (100) in acidic halide solutions using various analytical and spectroscopic techniques. The use of an integrated (electro) chemical etching chamber connected to X-ray photoelectron spectroscopy instrument to exclude the effect of oxygen from atmosphere is highlighted.

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