Oxygen Concentration Dependence of As-Grown Defect Formation in Nitrogen-Doped Czochralski Silicon Single Crystals

2021 ◽  
pp. 126236
Author(s):  
Kaoru Kajiwara ◽  
Kazuhisa Torigoe ◽  
Kazuhiro Harada ◽  
Masataka Hourai ◽  
Shin-ichi Nishizawa
Keyword(s):  
Single Crystals ◽  
Concentration Dependence ◽  
Oxygen Concentration ◽  
Defect Formation ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Dependence on the oxygen concentration of the resistivity anisotropy in YBa2Cu3O6+x single crystals

1990 ◽  
Vol 41 (3) ◽  
pp. 365-367 ◽  
Author(s):  
L Forro ◽  
C Ayache ◽  
J Y Henry ◽  
J Rossat-Mignod
Keyword(s):  
Single Crystals ◽  
Oxygen Concentration ◽  
Resistivity Anisotropy

Nano-scale analysis of precipitates in nitrogen-doped Czochralski silicon

2003 ◽  
Vol 66 (1-4) ◽  
pp. 305-313 ◽  
Author(s):  
G.A. Rozgonyi ◽  
A. Karoui ◽  
A. Kvit ◽  
G. Duscher
Keyword(s):  
Scale Analysis ◽  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Nano Scale

Copper precipitation in nitrogen-doped Czochralski silicon

2008 ◽  
Vol 104 (1) ◽  
pp. 013508 ◽  
Author(s):  
Weiyan Wang ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Nitrogen Doped ◽  
Czochralski Silicon ◽  
Copper Precipitation

Oxygen concentration dependence of silicon oxide dynamical properties

2018 ◽  
Vol 57 (6S3) ◽  
pp. 06KD01 ◽  
Author(s):  
Yuji Yajima ◽  
Kenji Shiraishi ◽  
Tetsuo Endoh ◽  
Hiroyuki Kageshima
Keyword(s):  
Concentration Dependence ◽  
Oxygen Concentration ◽  
Silicon Oxide ◽  
Dynamical Properties

The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source

2006 ◽  
Vol 527-529 ◽  
pp. 55-58 ◽  
Author(s):  
Kwan Mo Kim ◽  
Soo Hyung Seo ◽  
Jae Woo Kim ◽  
Joon Suk Song ◽  
Myung Hwan Oh ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Single Crystals ◽  
Nitrogen Doping ◽  
Doping Concentration ◽  
Silicon Powder ◽  
Mixed Powder ◽  
Nitrogen Doped ◽  
Sublimation Method ◽  
Si Content ◽  
Si Addition

The variation of nitrogen doping concentration was systematically investigated with respect to the amount of silicon powder added to the SiC powder for growing n-type 6H-SiC single crystal by the sublimation method. To change intentionally the Si content in the SiC powder, 0wt% to 2wt% of a silicon powder was added to first-thermal treated SiC powder and the mixed powder was treated again at 1800oC for 3 hours to eliminate excess free-metallic silicon. Nitrogen doped 6H-SiC single crystals were grown by using 2nd-thermal treatment SiC powder at fixed N2/(Ar + N2) (3%). The nitrogen doping concentration of 6H-SiC crystals increased with increasing Si content in the SiC powder. In this work, we could identify that the additional silicon powder in SiC powder plays a role in the enhancement of nitrogen doping in 6H-SiC crystals grown by the sublimation method.

Influence of annealing during growth on defect formation in Czochralski silicon

1983 ◽  
Vol 61 (1) ◽  
pp. 80-84 ◽  
Author(s):  
Hideo Nakanishi ◽  
Hiroki Kohda ◽  
Keigo Hoshikawa
Keyword(s):  
Defect Formation ◽  
Czochralski Silicon
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